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2G HTS wires are capable of transferring huge amounts of electrical energy without loss. An increase in the current-carrying capacity in these materials is possible due to an increase in the thickness of the superconducting layer; however, there is a problem with the appearance of impurity orientations and other defects with increasing thickness. We have proposed a solution of this problem by increasing the thickness of the superconducting layer by the MOCVD method using interlayers of yttrium oxide.The aim of this study was the production of thick composite films with yttrium oxide interlayers and high critical current density. In addition, we want to show the effectiveness of the approach of introducing yttrium oxide interlayers for the reduction of the number of parasitic orientations and defects with an increase in HTS film thickness.The deposition of YBа2Cu3O7–dand Y2O3 films was carried out layer by layer using reel-to-reel MOCVD equipment. A 12 mm wire of the following architecture was used as a substrate: 200 nm CeO2(Gd2O3)/30–50 nm LaMnO3/5–7 nm IBAD-MgO/50 nm LaMnO3/50 nm Al2O3/60 μ Hastelloy 276. The resulting films were annealed in oxygen for obtaining the orthorhombic YBCO phase. YBа2Cu3O7–d/Y2O3composites were obtained. In these composites, obtained using the MOCVD method, the amount of side (с║) orientation of the HTS layer was reduced and high values of the critical current density, exceeding 1 MA/cm at a thickness of > 2 μm remained. The efficiency of the approach of introducing yttrium oxide interlayers for the increase in the current characteristics with increasing film thickness was shown. It was found that further thickening of films with interlayers is prevented by the formation of nanopores, reducing the critical current density. REFERENCES 1. Fleshler S., Buczek D., Carter B., Ogata M. Scaleup of 2G wire manufacturing at American Superconductor Corporation. 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We report the study of anatase TiO2(001)-oriented thin films grown by pulsed laser deposition on LaAlO3(001). A combination of in situ and ex situ methods has been used to address both the origin of the Ti(3+)-localized states and their relationship with the structural and electronic properties on the surface and the subsurface. Localized in-gap states are analyzed using resonant X-ray photoelectron spectroscopy and are related to the Ti(3+) electronic configuration, homogeneously distributed over the entire film thickness. We find that an increase in the oxygen pressure corresponds to an increase in Ti(3+) only in a well-defined range of deposition pressure; outside this range, Ti(3+) and the strength of the in-gap states are reduced.

The discovery of 2D conductivity at the LaAlO3/SrTiO3 interface has been linking, for over a decade, two of the major current research fields in materials science: correlated transition-metal-oxide systems and low-dimensional systems. Notably, despite the 2D nature of the interfacial electron gas, the samples are 3D objects with thickness in the mm range. This prevented researchers so far from adopting strategies that are only viable for fully 2D materials, or from effectively exploiting degrees of freedom related to strain, strain gradient and curvature. Here a method based on pure strain engineering for obtaining freestanding LaAlO3/SrTiO3 membranes with micrometer lateral dimensions is demonstrated. Detailed transmission electron microscopy investigations show that the membranes are fully epitaxial and that their curvature results in a huge strain gradient, each layer showing a mixed compressive/tensile strain state. Electronic devices are fabricated by realizing ad hoc circuits for individual micro-membranes transferred on silicon chips. The samples exhibit metallic conductivity and electrostatic field effect like 2D-electron systems in bulk heterostructures. The results open a new path for adding oxide functionalities into semiconductor electronics, potentially allowing for ultra-low voltage gating of a superconducting transistors, micromechanical control of the 2D electron gas mediated by ferroelectricity and flexoelectricity, and on-chip straintronics.

Two-dimensional electron gases (2DEGs) formed at oxide interfaces show a large variety of functional properties of major physical interest. Here, the peculiar electric transport behavior of the 2DEG formed at the LGO/STO oxide interface is studied under the application of light pulses of different amplitude, duration, and repetition rate, and by varying the sample temperature from 8 to 300 K. The experimental results evidence a persistent photoconductivity, intimately related to the complex physics of this system. These findings suggest the possibility of using the oxide interfaces for advanced applications as, for example, energy conversion or information storage.

Concepts and experimental procedures to obtain different types of YBa 2 Cu 3 O 7 grain boundaries Josephson junction through the biepitaxial technique have been developed. Various seed layers (MgO, CeO 2 and SrTiO 3) and substrates (MgO, SrTiO 3) have been used providing, for the biepitaxial technique, additional flexibility in circuit design. A detailed investigation on transport properties evidenced good performances for both junctions and superconducting quantum interference devices. Experimental evidence is given of a conventional magnetic field behavior in 45° tilt Artificial Grain Boundary (AGB) for which no π-loops are predicted along the interface.

(110) and (103) YBa 2 Cu 3 O 7 films have been grown onto exact and vicinal (110) SrTiO 3 substrates, and on vicinal (110) MgO substrates with a SrTiO 3 buffer layer. The samples are carefully characterised by reciprocal space mapping with x-ray diffraction, in order to investigate the features of the typical double domain of (110) and (103) YBa 2 Cu 3 O 7 structure. It is demonstrated that vicinal cut substrates allow to select one film/substrate epitaxial relation. The growth properties of these thin films deposited on vicinal surfaces are discussed.

Using high-resolution transmission electron microscopy and image simulation techniques in combination with ab initio calculations, we show the existence of two different superlattices of crystallographic shear planes, analogous to the Magnéli phases of rutile, in oxygen-deficient films of anatase TiO2 epitaxially grown on LaAlO3 substrates. (103)- and (101)-oriented shear plane structures are detected in the outer film region and in proximity of the film/substrate interface, respectively. We show that these shear planes are characterized by TiO-like cubic local structures, which can deviate from the TinO2n-1 stoichiometry of the classical rutile-derived Magnéli phases, particularly in the outer part of the film. Computed formation energies provide insights into the thermodynamic stability of the observed structures and their relations to the growth dynamics.

We investigate the structural, chemical, and magnetic properties on BiFe0.5Cr0.5O3 (BFCO) thin films grown on (001) (110) and (111) oriented SrTiO3 (STO) substrates by x-ray magnetic circular dichroism and x-ray diffraction. We show how highly pure BFCO films, differently from the theoretically expected ferrimagnetic behavior, present a very weak dichroic signal at Cr and Fe edges, with both moments aligned with the external field. Chemically sensitive hysteresis loops show no hysteretic behavior and no saturation up to 6.8 T. The linear responses are induced by the tilting of the Cr and Fe moments along the applied magnetic field. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

We present various concepts and experimental procedures to fabricate biepitaxial YBa 2Cu 3O 7-x grain boundary Josephson junctions. Different types of structures can be realized including "π-loops" in which one of the junctions is intrinsically π-phase shifted. Due to its versatility the biepitaxial technique offers the possibility to investigate basic aspects of the physics of grain boundary Josephson junctions, and also the influence of intrinsic and extrinsic d-wave induced effects in transport properties. Further, we discuss the possibility to produce circuits in which "0-" and "π-loops" are controllably located on the same chip, and intrinsic d-wave effects can be exploited.

YBa 2 C 3 O 7− δ artificial grain boundary Josephson junctions have been fabricated by a recently implemented biepitaxial technique, employing MgO and CeO 2 as seed layers. The Josephson properties of asymmetric grain boundaries (GBs) characterised by a misalignment of the c -axis (45° c -axis tilt or twist) are presented. A comparison with GBs characterised by 45° c -axis tilt or twist and by an additional rotation of 45° of the a – b planes of one electrode has been also performed. The differences observed in the transport properties have been interpreted in terms of d x 2 − y 2 wave symmetry of the order parameter and faceting of the grain boundary.

YBa2Cu3O7-x artificial grain boundary Josephson junctions have been fabricated, employing a recently implemented biepitaxial technique. The grain boundaries can be obtained by controlling the orientation of the MgO seed layer and are characterized by a misalignment of the c-axes (45 degrees a-axis tilt or 45 degrees a-axis twist). These types of grain boundaries are still mostly unexplored. We carried out a complete characterization of their transport properties and microstructure. Junctions and de SQUIDs associated with these grain boundaries exhibit an excellent Josephson phenomenology and high values of the ICRN product and of the magnetic flux-to-voltage transfer parameter respectively. Remarkable differences in the transport parameters of tilt and twist junctions have been observed, which can be of interest for several applications. A maximum speed of Josephson vortices as calculated from the voltage step values of the order of 2 x 10(6) m s(-1) is obtained. These devices could also have some impact on experiments designed to study the symmetry of the order parameter, exploiting their microstructure and anisotropic properties. High-resolution electron microscopy showed the presence of perfect basal plane faced boundaries in the cross sections of tilt boundaries.