31 results on '"Philippe De Mierry"'
Search Results
2. Bandwidth-unlimited polarization-maintaining metasurfaces
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Samira Khadir, Patrice Genevet, Benjamin Damilano, Virginie Brandli, Stéphane Vézian, Qinghua Song, Philippe De Mierry, Sébastien Chenot, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
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Computer Science::Computer Science and Game Theory ,Materials Science ,Holography ,Nanophotonics ,ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION ,Physics::Optics ,02 engineering and technology ,01 natural sciences ,law.invention ,010309 optics ,Superposition principle ,Optics ,law ,0103 physical sciences ,Broadband ,Chromatic scale ,Physics::Atomic Physics ,Circular polarization ,Research Articles ,Wavefront ,Physics ,[PHYS]Physics [physics] ,Multidisciplinary ,business.industry ,SciAdv r-articles ,021001 nanoscience & nanotechnology ,Polarization (waves) ,0210 nano-technology ,business ,Research Article - Abstract
A general method of designing polarization and angular nondispersive metasurface with unlimited bandwidth is provided., Any arbitrary state of polarization of light beam can be decomposed into a linear superposition of two orthogonal oscillations, each of which has a specific amplitude of the electric field. The dispersive nature of diffractive and refractive optical components generally affects these amplitude responses over a small wavelength range, tumbling the light polarization properties. Although recent works suggest the realization of broadband nanophotonic interfaces that can mitigate frequency dispersion, their usage for arbitrary polarization control remains elusively chromatic. Here, we present a general method to address broadband full-polarization properties of diffracted fields using an original superposition of circular polarization beams transmitted through metasurfaces. The polarization-maintaining metasurfaces are applied for complex broadband wavefront shaping, including beam deflectors and white-light holograms. Eliminating chromatic dispersion and dispersive polarization response of conventional diffractive elements lead to broadband polarization-maintaining devices of interest for applications in polarization imaging, broadband-polarimetry, augmented/virtual reality imaging, full color display, etc.
- Published
- 2021
3. Correlative investigation of Mg doping in GaN layers grown at different temperatures by atom probe tomography and off-axis electron holography
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Enrico Di Russo, Philippe De Mierry, Isabelle Mouton, Pierre-Henri Jouneau, Catherine Bougerol, L. Amichi, David Cooper, Victor Boureau, Philippe Vennéguès, Adeline Grenier, Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Université Nice Sophia Antipolis (... - 2019) (UNS), and Nanophysique et Semiconducteurs (NPSC)
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Materials science ,electron holography ,Annealing (metallurgy) ,Analytical chemistry ,Bioengineering ,Gallium nitride ,02 engineering and technology ,Chemical vapor deposition ,Atom probe ,doping ,010402 general chemistry ,01 natural sciences ,Electron holography ,law.invention ,GaN ,chemistry.chemical_compound ,law ,transmission electron microscopy ,General Materials Science ,atom probe tomography ,Electrical and Electronic Engineering ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,ComputingMilieux_MISCELLANEOUS ,[PHYS]Physics [physics] ,Dopant ,Mechanical Engineering ,Doping ,off-axis electron holography ,laser-assisted atom probe tomogra- phy ,General Chemistry ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,chemistry ,Mechanics of Materials ,Transmission electron microscopy ,Mg-clusters ,0210 nano-technology - Abstract
Correlation between off-axis electron holography and atom probe tomography (APT) provides morphological, chemical and electrical information about Mg doping (p-type) in gallium nitride (GaN) layers that have been grown at different temperatures at a nanometric scale. APT allows access to the three-dimensional distribution of atoms and their chemical nature. In particular, this technique allows visualisation of the Mg-rich clusters observed in p-doped GaN layers grown by metal-organic chemical vapour deposition. As the layer growth temperature increases, the cluster density decreases but their size indicted by the number of atoms increases. Moreover, APT reveals that threading dislocations are decorated with Mg atoms. Off-axis electron holography provides complementary information about the electrical activity of the Mg doping. As only a small fraction of dopant atoms are ionised at room temperature, this fraction is increased by annealing the specimen to 400 °C in situ in a transmission electron microscope (TEM). A strong reduction of the dopant electrical activity is observed for increases in the layer growth temperature. The correlation of APT with TEM-based techniques was shown to be a unique approach in order to investigate how the growth temperature affects both the chemical distribution and electrical activity of Mg dopant atoms.
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- 2020
4. Printing polarization and phase at the optical diffraction limit: near- and far-field optical encryption
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Benjamin Damilano, Qinghua Song, Romain Laberdesque, Samira Khadir, Stéphane Vézian, Patrice Genevet, Sébastien Chenot, Virginie Brandli, Philippe De Mierry, and Benoit Wattellier
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Materials science ,Optical diffraction ,business.industry ,ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION ,Near and far field ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Polarization (waves) ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,Optical encryption ,Optics ,Electrical and Electronic Engineering ,0210 nano-technology ,business ,Biotechnology - Abstract
Securing optical information to avoid counterfeiting and manipulation by unauthorized persons and agencies requires innovation and enhancement of security beyond basic intensity encryption. In this paper, we present a new method for polarization-dependent optical encryption that relies on extremely high-resolution near-field phase encoding at metasurfaces, down to the diffraction limit. Unlike previous intensity or color printing methods, which are detectable by the human eye, analog phase decoding requires specific decryption setup to achieve a higher security level. In this work, quadriwave lateral shearing interferometry is used as a phase decryption method, decrypting binary quick response (QR) phase codes and thus forming phase-contrast images, with phase values as low as 15°. Combining near-field phase imaging and far-field holographic imaging under orthogonal polarization illumination, we enhanced the security level for potential applications in the area of biometric recognition, secure ID cards, secure optical data storage, steganography, and communications.
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- 2020
- Full Text
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5. Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates
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Bastien Bonef, Daniel Cohen, James S. Speck, Philippe De Mierry, Matthew S. Wong, Feng Wu, Shuji Nakamura, Philippe Vennéguès, Haojun Zhang, Michel Khoury, Steven P. DenBaars, Hongjian Li, Department of Computer Science and Engineering [Hong Kong, China], The Chinese University of Hong Kong [Hong Kong], Laboratoire d'Ingénierie des Systèmes Biologiques et des Procédés (LISBP), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National de la Recherche Agronomique (INRA), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Panthéon-Assas (UP2), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), Université Côte d'Azur (UCA)-Université Côte d'Azur (UCA)-Centre National de la Recherche Scientifique (CNRS), University of California, COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut National de la Recherche Agronomique (INRA)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), University of California (UC), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)
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010302 applied physics ,[PHYS]Physics [physics] ,Materials science ,business.industry ,Slope efficiency ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Laser ,Polarization (waves) ,7. Clean energy ,01 natural sciences ,law.invention ,Lidar ,law ,0103 physical sciences ,Scalability ,Sapphire ,Optoelectronics ,General Materials Science ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,0210 nano-technology ,business ,Science, technology and society ,ComputingMilieux_MISCELLANEOUS ,Diode - Abstract
The last two decades have shown an increasing need for GaN-based laser diodes (LDs), which are currently only grown on bulk GaN substrates, which remain to date very expensive and/or only available in small sizes. The ever growing laser market will expand in the coming years, thanks to the development of automotive laser lighting, high-speed Li-Fi optical data transmission, LiDAR sensing for autonomous vehicles and smart cities, head-up displays, and AR/VR systems, in addition to biomedical and further industrial applications. These emerging technologies demand for mass-production of GaN-based lasers to be produced on large-size, low-cost, and industrially compatible substrates. To address this issue, we demonstrate the first electrically injected semipolar 440 nm LD on high-quality and low-defect-density (11-22) GaN templates grown on scalable and low-cost sapphire substrates. The LDs exhibit a threshold current density of 17 kA/cm2, a single facet output power of more than 200 mW at 2 A with a slope efficiency of 0.85 W/A, and a TE polarization having a ratio of 97.6%. These results enable the advancement of ultra-low-cost LDs while benefiting from the inherent advantages of semipolar GaN properties.
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- 2019
6. Reduced nonradiative recombination in semipolar green-emitting III-N quantum wells with strain-reducing AlInN buffer layers
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Andreas Hangleiter, Heiko Bremers, Florian Tendille, Philippe Vennéguès, Philippe De Mierry, Philipp Henning, Philipp Horenburg, Jesús Zúñiga-Pérez, Uwe Rossow, Institute of Applied Physics [Braunschweig], Technische Universität Braunschweig [Braunschweig], Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institute of Applied Physics, and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
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010302 applied physics ,Materials science ,Photoluminescence ,Physics and Astronomy (miscellaneous) ,Strain (chemistry) ,business.industry ,Relaxation (NMR) ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Buffer (optical fiber) ,Lattice mismatch ,[SPI]Engineering Sciences [physics] ,0103 physical sciences ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Optoelectronics ,0210 nano-technology ,business ,Layer (electronics) ,Quantum well ,Recombination ,ComputingMilieux_MISCELLANEOUS - Abstract
Using strain-reducing partially relaxed AlInN buffer layers, we observe reduced nonradiative recombination in semipolar green-emitting GaInN/GaN quantum wells. Since strain is a key issue for the formation of defects that act as nonradiative recombination centers, we aim to reduce the lattice mismatch between GaInN and GaN by introducing an AlInN buffer layer that can be grown lattice-matched along one of the in-plane directions of GaN, even in the semipolar ( 11 2 ¯ 2 ) orientation. With the increasing thickness, the buffer layer shows partial relaxation in one direction and thereby provides a growth template with reduced lattice mismatch for the subsequent GaInN quantum wells. Time-resolved photoluminescence measurements show reduced nonradiative recombination for the structures with a strain-reducing buffer layer.Using strain-reducing partially relaxed AlInN buffer layers, we observe reduced nonradiative recombination in semipolar green-emitting GaInN/GaN quantum wells. Since strain is a key issue for the formation of defects that act as nonradiative recombination centers, we aim to reduce the lattice mismatch between GaInN and GaN by introducing an AlInN buffer layer that can be grown lattice-matched along one of the in-plane directions of GaN, even in the semipolar ( 11 2 ¯ 2 ) orientation. With the increasing thickness, the buffer layer shows partial relaxation in one direction and thereby provides a growth template with reduced lattice mismatch for the subsequent GaInN quantum wells. Time-resolved photoluminescence measurements show reduced nonradiative recombination for the structures with a strain-reducing buffer layer.
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- 2019
7. Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density
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Blandine Alloing, Benjamin Damilano, Guy Feuillet, Nicolas Bernier, Patrice Gergaud, Cécile Gourgon, Marc Portail, Roy Dagher, Virginie Brandli, Maximilien Cottat, Jesus Zuniga Perez, Nicolas Mante, Philippe De Mierry, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS), Ecole Polytechnique Fédérale de Lausanne (EPFL), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université Polytechnique Hauts-de-France (UPHF)-Institut supérieur de l'électronique et du numérique (ISEN), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des technologies de la microélectronique [2001-2015] (LTM [2001-2015]), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Chimie, Structures et Propriétés de Biomatériaux et d'Agents Thérapeutiques (CSPBAT), Université Paris 13 (UP13)-Institut Galilée-Université Sorbonne Paris Cité (USPC)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Paris 13 (UP13)-Institut Galilée-Université Sorbonne Paris Cité (USPC)
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Fabrication ,Materials science ,Nanostructure ,Silicon ,Silicon on insulator ,chemistry.chemical_element ,Gallium nitride ,02 engineering and technology ,Epitaxy ,01 natural sciences ,Inorganic Chemistry ,chemistry.chemical_compound ,Metalorganic vapor phase epitaxy ,Defects ,0103 physical sciences ,Nano ,Materials Chemistry ,ComputingMilieux_MISCELLANEOUS ,010302 applied physics ,[PHYS]Physics [physics] ,business.industry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Nanostructures ,chemistry ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Optoelectronics ,Dislocation ,0210 nano-technology ,business ,Pendeo-Epitaxy - Abstract
International audience; Nanopendeo-epitaxy of gallium nitride (GaN) is considered in this study as a way of producing freestanding GaN with reduced strain and threading dislocation density (TDD) for optoelectronic applications. The novelty of this work lies in the use of silicon on insulator (SOI) substrates patterned into nano-pillars down to the buried oxide (BOX). We actually want to benefit from the creeping properties of SiO2 at the growth temperature of GaN for strain relaxation and grain-boundary dislocations reduction. In this paper, we report on the fabrication of 40×40 µm 2 and 300×300 µm 2 freestanding GaN platelets, up to 10 µm-thick, spontaneously separated from the initial pillars. Structural and optical characterizations show that the platelets are crack-free and almost fully relaxed, with a TDD of ∼ 4×10 8 /cm 2. We underline the different benefits of this approach, but most importantly, we believe that it will be the founding-brick for transferable GaN-based devices.
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- 2019
8. Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template
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Haojun Zhang, Philippe De Mierry, YiChao Chow, Aidan A. Taylor, Zainuriah Hassan, Bastien Bonef, Shuji Nakamura, Steven P. DenBaars, Jared Kearns, Matthew S. Wong, Hongjian Li, Panpan Li, Michel Khoury, Department of Computer Science and Engineering [Hong Kong, China], The Chinese University of Hong Kong [Hong Kong], Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Ingénierie des Systèmes Biologiques et des Procédés (LISBP), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National de la Recherche Agronomique (INRA), Department of Plant Biology and Ecology, College of Lif e Sciences, Nankai University (NKU), University of California [Santa Barbara] (UCSB), University of California, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), Université Côte d'Azur (UCA)-Université Côte d'Azur (UCA)-Centre National de la Recherche Scientifique (CNRS), Materials Department, UCSB, COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut National de la Recherche Agronomique (INRA)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
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Materials science ,Passivation ,chemistry.chemical_element ,02 engineering and technology ,01 natural sciences ,law.invention ,010309 optics ,[SPI]Engineering Sciences [physics] ,Optics ,law ,0103 physical sciences ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,Quantum well ,ComputingMilieux_MISCELLANEOUS ,[PHYS]Physics [physics] ,business.industry ,Optical polarization ,021001 nanoscience & nanotechnology ,Atomic and Molecular Physics, and Optics ,Blueshift ,chemistry ,Sapphire ,Optoelectronics ,0210 nano-technology ,business ,Current density ,Indium ,Light-emitting diode - Abstract
International audience; We investigated the electrical and optical performances of semipolar (11-22) InGaN green µLEDs with a size ranging from 20 × 20 µm 2 to 100 × 100 µm 2 , grown on a low defect density and large area (11-22) GaN template on patterned sapphire substrate. Atom probe tomography (APT) gave insights on quantum wells (QWs) thickness and indium composition and indicated that no indium clusters were observed in the QWs. The µLEDs showed a small wavelength blueshift of 5 nm, as the current density increased from 5 to 90 A/cm 2 and exhibited a size-independent EQE of 2% by sidewall passivation using atomiclayer deposition, followed by an extremely low leakage current of ~0.1 nA at −5 V. Moreover, optical polarization behavior with a polarization ratio of 40% was observed. This work demonstrated long-wavelength µLEDs fabricated on semipolar GaN grown on foreign substrate, which are applicable for a variety of display applications at a low cost.
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- 2019
9. Green Semipolar ($11\overline{2}2$) InGaN Micro-Light-Emitting-Diodes on ($11\overline{2}2$) GaN/Sapphire Template
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Bastien Bonef, Michel Khoury, Hongjian Li, Haojun Zhang, Matthew S. Wong, Philippe De Mierry, Aidan A. Taylor, Shuji Nakamura, and Steven P. DenBaars
- Subjects
Materials science ,law ,Sapphire ,Quantum efficiency ,Atom probe ,Atomic physics ,Current density ,law.invention ,Light-emitting diode - Abstract
In this work, we fabricated five different sizes of 520 nm semipolar micro-light-emitting-diodes ( $\mu \text{LEDs}$ ), ranging from 100×100 to $20\times 20\mu \mathrm{m}^{2}$ , on (11–22) GaN/sapphire template. Based upon the results from atom probe tomography (APT), no InGaN cluster was observed in the active region. For the current-voltage characteristics, the voltages were 3.2 V and 3.0 V at 60 A/cm2 for the 100×100 and $20\times 20\ \mu \mathrm{m}^{2}\ \mu \text{LEDs}$ , respectively. In terms of the optical aspect, the $20\times 20\mu \mathrm{m}^{2}\mu \text{LED}$ demonstrated a trivial blue-shift of 9 nm as the inject current density increases from 5 A/cm2 to 100 A/cm2. Moreover, for the external quantum efficiency (EQE) performances, $\mu \text{LEDs}$ in all sizes yielded 6-8% efficiency droop between the peak EQE current density and at 100 A/cm2, and the peak EQE was 2% for all $\mu \text{LED}$ sizes. Although further improvements on growth and materials are required for better $\mu \text{LED}$ performances, this demonstration revealed the feasibility to produce long-wavelength semipolar InGaN $\mu \text{LEDs}$ with high efficiency on large-area sapphire substrates.
- Published
- 2019
10. Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping
- Author
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Guy Feuillet, Marc Portail, Rami Mantach, Philippe Vennéguès, Philippe De Mierry, Jesús Zúñiga-Pérez, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and Université Nice Sophia Antipolis (... - 2019) (UNS)
- Subjects
010302 applied physics ,Materials science ,Aspect ratio ,business.industry ,General Engineering ,General Physics and Astronomy ,Silicon on insulator ,02 engineering and technology ,Trapping ,021001 nanoscience & nanotechnology ,01 natural sciences ,Quality (physics) ,0103 physical sciences ,Optoelectronics ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,Dislocation ,0210 nano-technology ,business ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2020
11. Polar and semi-polar oriented InGaN-(In)GaN multiple quantum wells for red-light emitters (Conference Presentation)
- Author
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Philippe De Mierry, Benjamin Damilano, Bernard Gil, Thi Huong Ngo, and Aimeric Courville
- Subjects
Presentation ,Materials science ,business.industry ,media_common.quotation_subject ,Multiple quantum ,Polar ,Optoelectronics ,Red light ,business ,media_common - Published
- 2018
12. Internal quantum efficiency in polar and semipolar (11e22) InxGa1-xN/InyGa1-yN quantum wells emitting from blue to red
- Author
-
Benjamin Damilano, Pierre Valvin, Philippe De Mierry, Thi Huong Ngo, Bernard Gil, Nicolas Chery, Aimeric Courville, Pierre Ruterana, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Nanostructures quantiques propriétés optiques (NQPO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Physique de l'Exciton, du Photon et du Spin (PEPS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), and Université Nice Sophia Antipolis (... - 2019) (UNS)
- Subjects
010302 applied physics ,Photoluminescence ,Materials science ,Condensed matter physics ,Quantum-confined Stark effect ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Molecular physics ,Photoexcitation ,Condensed Matter::Materials Science ,chemistry ,Electric field ,[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] ,0103 physical sciences ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,General Materials Science ,Quantum efficiency ,Electrical and Electronic Engineering ,0210 nano-technology ,Spectroscopy ,Indium ,Quantum well - Abstract
International audience; In this work, we investigate the impact of the quantum confined Stark effect and of the carrier localization on the internal quantum efficiency of polarized single or multiple InxGa1-xN/GaN quantum well(s), and semi-polar (11e22) multiple InxGa1-xN/InyGa1-yN quantum well. We find that increasing the influence of the quantum confined Stark effect at constant indium content with increasing the well-width induces a reduction of the internal quantum efficiency onsets for a decreasing value of the photoexcitation density. Similar but no so dramatic trend is reported when increasing the indium content and thus when increasing the localization of carriers to localized fluctuations of the chemical composition of the alloy. In addition, a change of the electric field internal to active layers (quantified by using time-resolved photoluminescence spectroscopy) realized by growing samples along a semi-polar orientation leads to experimental observation of a substantial enhancement of the threshold of photoexcitation density at which onsets the reduction of the internal quantum efficiency. A correlation is found through several orders of magni- tude between the photoexcitation density PT for the onset of the collapse of IQE and the values of the photoluminescence radiative decay time trad. A scaling law is found in the investigated samples: PT ~ trad-n with n 1⁄4 3/2 ± 0.15 which evidences that quantum confined Stark effect is the main origin for the efficiency droop in nitride light-emitting diodes based on InxGa1-xN active layers.
- Published
- 2018
13. Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates
- Author
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James S. Speck, Abdullah I. Alhassan, Steven P. DenBaars, Asad J. Mughal, Michel Khoury, Bastien Bonef, Ezzah Azimah, Hongjian Li, Philippe De Mierry, M. E. A. Samsudin, and Shuji Nakamura
- Subjects
010302 applied physics ,Materials science ,business.industry ,Drop (liquid) ,02 engineering and technology ,Atom probe ,021001 nanoscience & nanotechnology ,01 natural sciences ,law.invention ,Wavelength ,law ,0103 physical sciences ,Sapphire ,Optoelectronics ,General Materials Science ,Quantum efficiency ,Metalorganic vapour phase epitaxy ,0210 nano-technology ,business ,Light-emitting diode ,Diode - Abstract
We demonstrate efficient semipolar (11-22) 550 nm yellow/green InGaN light-emitting diodes (LEDs) with In0.03Ga0.97N barriers on low defect density (11-22) GaN/patterned sapphire templates. The In0.03Ga0.97N barriers were clearly identified, and no InGaN clusters were observed by atom probe tomography measurements. The semipolar (11-22) 550 nm InGaN LEDs (0.1 mm2 size) show an output power of 2.4 mW at 100 mA and a peak external quantum efficiency of 1.3% with a low efficiency drop. In addition, the LEDs exhibit a small blue-shift of only 11 nm as injection current increases from 5 to 100 mA. These results suggest the potential to produce high efficiency semipolar InGaN LEDs with long emission wavelength on large-area sapphire substrates with economical feasibility.
- Published
- 2017
14. Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults
- Author
-
Sébastien Chenot, M. Teisseire, Florian Tendille, Philippe De Mierry, and Philippe Vennéguès
- Subjects
Materials science ,business.industry ,Stacking ,Cathodoluminescence ,Chemical vapor deposition ,Condensed Matter Physics ,Inorganic Chemistry ,Materials Chemistry ,Sapphire ,Optoelectronics ,Wafer ,Metalorganic vapour phase epitaxy ,Dislocation ,business ,Stacking fault - Abstract
We report on the selective area growth of semipolar (11-22) GaN epilayers on wet etched r-plane patterned sapphire substrates (PSS) by metal organic chemical vapor deposition. Using a three-step growth method, planar (11-22) GaN epilayers on 2 in. wafers with significant optical and structural quality improvements have been obtained. The filtering of basal stacking faults and dislocations was achieved by overlapping adjacent crystals and forming voids between them. These voids act as a barrier to defect propagation which results in reduced defect density at the surface of the epilayer. Cathodoluminescence measurements at 80 K revealed a dislocation density of 5.1×107 cm−2 and a basal stacking fault density below 30 cm−1. Moreover, photoluminescence and X-ray diffraction measurements attested a material quality similar to conventional GaN on c-plane sapphire. Such large scale semipolar GaN templates are opening the way for efficient semipolar devices grown heteroepitaxially.
- Published
- 2014
15. Ultraviolet light emitting diodes using III-N quantum dots
- Author
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Mohamed Al Khalfioui, Bernard Gil, Julien Brault, Samuel Matta, Daniel Rosales, Florian Tendille, Mathieu Leroux, Philippe De Mierry, Jean Massies, Sébastien Chenot, Benjamin Damilano, Thi Huong Ngo, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Physique de l'Exciton, du Photon et du Spin (PEPS), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)-Université Nice Sophia Antipolis (... - 2019) (UNS), and ANR-14-CE26-0025,NANOGANUV,Fabrication, Modélisation, Caractérisation de Nanostructures AlGaN Auto-Assemblées pour Emetteurs UV(2014)
- Subjects
Fabrication ,Materials science ,02 engineering and technology ,Electroluminescence ,7. Clean energy ,01 natural sciences ,law.invention ,law ,Electric field ,0103 physical sciences ,General Materials Science ,010302 applied physics ,business.industry ,Mechanical Engineering ,Quantum-confined Stark effect ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Mechanics of Materials ,Quantum dot ,[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] ,Optoelectronics ,Polar ,0210 nano-technology ,business ,Molecular beam epitaxy ,Light-emitting diode - Abstract
(Al,Ga)N-based quantum dots (QDs) grown on Al 0.5 Ga 0.5 N by molecular beam epitaxy have been studied as the active region for the fabrication of ultra-violet (UV) light emitting diodes (LEDs). In the first part, using both “polar” (0001) and “semipolar” (112¯2) surface orientations, the structural and optical properties of different QD structures are investigated and compared. In particular, their propensity to get an emission in the UV range is analyzed in correlation with the influence of the internal electric field on their optical properties. In a second part, (0001) and (112¯2)-oriented LEDs using GaN/Al 0.5 Ga 0.5 N QD as active regions have been fabricated. Their main current-voltage characteristics and electroluminescence properties are discussed, with a focus on the LED emission wavelength range reached for both surface orientations: it is shown that a large part of the UV-A region can be covered, with longer wavelengths-from 415 to 360 nm-for the “polar” LEDs, and shorter ones-from 345 to 325 nm-for the “semipolar” LEDs. In addition, the influence of the internal electric field on the QD-LEDs working operation is shown.
- Published
- 2016
16. Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures
- Author
-
Bernard Gil, Benjamin Damilano, Kaddour Lekhal, Pierre Valvin, Philippe De Mierry, Thi Huong Ngo, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Physique de l'Exciton, du Photon et du Spin (PEPS), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), GANEX, and ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
- Subjects
Range (particle radiation) ,Materials science ,Photoluminescence ,Physics and Astronomy (miscellaneous) ,business.industry ,Measure (physics) ,Wide-bandgap semiconductor ,Heterojunction ,7. Clean energy ,[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] ,Optoelectronics ,Quantum efficiency ,Light emission ,business ,Quantum - Abstract
We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Yoshiya Iwata, Ryan G. Banal, Shuhei Ichikawa, Mitsuru Funato, and Yoichi Kawakami, Journal of Applied Physics 117, 075701 (2015). Our results indicate that low temperature internal quantum efficiencies sit in the 50 % range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57 % with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5 % up to 4.3 % at room temperature.
- Published
- 2015
17. Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy
- Author
-
Julien Brault, Jean Massies, Thierry Bretagnon, Benjamin Damilano, Daniel Rosales, M. Nemoz, Pierre Bigenwald, Bernard Gil, Philippe Vennéguès, Philippe De Mierry, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Physique de l'Exciton, du Photon et du Spin (PEPS), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut Pascal (IP), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-SIGMA Clermont (SIGMA Clermont)-Centre National de la Recherche Scientifique (CNRS), and Université Nice Sophia Antipolis (... - 2019) (UNS)
- Subjects
010302 applied physics ,education.field_of_study ,Photoluminescence ,Materials science ,business.industry ,Population ,General Physics and Astronomy ,Heterojunction ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] ,0103 physical sciences ,Optoelectronics ,Metalorganic vapour phase epitaxy ,0210 nano-technology ,education ,High-resolution transmission electron microscopy ,business ,Quantum well ,Molecular beam epitaxy - Abstract
We have grown (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells (QWs) using molecular beam epitaxy on GaN (11-22)-oriented templates grown by metal-organic vapor phase epitaxy on m-plane oriented sapphire substrates. The performance of epitaxial growth of GaN/Al0.5Ga0.5N heterostructures on the semi-polar orientation (11-22) in terms of surface roughness and structural properties, i.e., strain relaxation mechanisms is discussed. In addition, high resolution transmission electron microscopy reveals very smooth QW interfaces. The photoluminescence of such samples are strictly originating from radiative recombination of free excitons for temperatures above 100 K. At high temperature, the population of localized excitons, moderately trapped (5 meV) at low temperature, is negligible.
- Published
- 2015
18. Optical properties of small GaN-Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates
- Author
-
Bernard Gil, Benjamin Damilano, Daniel Rosales, Julien Selles, Guillaume Cassabois, Jean Massies, Julien Brault, Philippe Vennéguès, Thierry Guillet, Philippe De Mierry, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), and Labex Ganex
- Subjects
Photoluminescence ,Materials science ,quantum confined Stark effect ,business.industry ,Quantum-confined Stark effect ,Gallium nitride ,Epitaxy ,GaN ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,chemistry ,AlGaN ,molecular beam epitaxy ,Quantum dot ,UV LEDs ,[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] ,Sapphire ,Optoelectronics ,Metalorganic vapour phase epitaxy ,business ,self-assembled nanostructures ,polar and semi-polar orientations ,Molecular beam epitaxy - Abstract
GaN-Al0.5NGa0.5N quantum dots deposited on (11-22) planes have been grown by combining Molecular Beam Epitaxy and Metal Organic Vapour Phase Epitaxy. This combination is interesting for realization of ultraviolet operation light emitting diodes, lasers andsingle photon sources,… (1,3) The growth of dots was achieved by MBE using ammonia as nitrogen precursor and growth interruption in ammonia less conditions to trigger corrugation of GaN and dot formation (4). The (11-22) GaN oriented peudosubstrate was realized by MOVPE starting from a M-plane oriented sapphire substrate. The orientation of the growth plane dictates in-plane anisotropies which are effectively found leading to a transition from isolated dots to nanochains - oriented along the direction as evidenced from Atomic Force Microscopy features or optical properties: polarization rates and temperature dependent measurements of the radiative recombination process for instance(5). We here restrict to small size isolated quantum dots and present innovative optical properties among which are micro-photoluminescence data versus pump power, polarization of the emitted photons at different temperatures. We also analyse the photoluminescence decay times and model our finding in the context of the effective mass approximation. The crystal field splitting is measured in Al 0.5NGa 0.5N lattice-matched to (11-2) oriented GaN by polarized microphotoluminecence under high photo- injection conditions.
- Published
- 2015
19. Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures
- Author
-
Benjamin Damilano, Kaddour Lekhal, Bernard Gil, Pierre Valvin, Huong Thi Ngo, Philippe De Mierry, Daniel Rosales, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
- Subjects
nitrides ,Photoluminescence ,Materials science ,business.industry ,Quantum-confined Stark effect ,chemistry.chemical_element ,Heterojunction ,Epitaxy ,Wide band gap semiconductors ,Molecular physics ,Condensed Matter::Materials Science ,chemistry ,[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] ,visible light emitters ,Optoelectronics ,photoluminescence ,Metalorganic vapour phase epitaxy ,Exponential decay ,business ,Quantum well ,Indium - Abstract
We present an investigation of optical properties of yellow light emitting (Ga,In) N-based devices grown by metalorganic vapor phase epitaxy (MOVPE) on c-plane sapphire with different designs: well width, indium composition up to 23 percent in the well layer. Using time-resolved photoluminescence measurements collected in range of 8-300K, temperature – dependent photoluminescence decays are determined, they exhibit similar behaviors for all samples. These quantum devices always display a two-mode exponential decay with a long decay time and a short one in a ratio about four to five. The photoluminescence intensities measured from low temperature to room temperature give large values of activation temperature that indicate the increasing of the non-radiative recombination rate when the temperature increases. The average decay times are found by a procedure using fitting sigmoidal functions. These decay times increase exponentially with the indium concentration and the well width due to influence of quantum confined Stark effect on these devices. Finally, in order to estimate the performances of our samples, we plotted the decay times obtained versus product of the indium content and the well width together with others published decay times.
- Published
- 2015
20. Comparison of high quality GaN‐based light‐emitting diodes grown on alumina‐rich spinel and sapphire substrates
- Author
-
Philippe De Mierry, Sébastien Chenot, Milan R. Kokta, Jennifer Stone-Sundberg, Eric Virey, Damien Pauwels, D. Lancefield, and Frank Tinjod
- Subjects
Materials science ,business.industry ,Spinel ,Chemical vapor deposition ,Electroluminescence ,engineering.material ,Condensed Matter Physics ,law.invention ,law ,Sapphire ,engineering ,Optoelectronics ,Metalorganic vapour phase epitaxy ,business ,Current density ,Diode ,Light-emitting diode - Abstract
High quality GaN-based light-emitting diodes (LEDs) can be achieved on alumina-rich spinel (MgAl6O10), a new substrate material with better thermal and lattice match to GaN than sapphire. As alumina-rich spinel is chemically very close to sapphire (Al2O3), the GaN metal-organic chemical vapour deposition (MOCVD) conditions developed for c-plane sapphire have been successfully replicated on it. In this article, we report on the electroluminescence (EL) properties of GaN-based LEDs grown by MOCVD simultaneously on Al2O3-(0001) and MgAl6O10-(111). Both devices exhibit a linear increase of the light output power versus current density, with a higher EL-intensity and a narrower EL-linewidth for the LEDs grown on alumina-rich spinel. However, due to the lower thermal conductivity of spinel, these LEDs start suffering from device heating at lower current densities than on sapphire. Irreversible damage occurs for DC current densities of ∼0.9 kA/cm2 and at an estimated junction temperature of ∼325 °C. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Published
- 2006
21. Current transport through AlInN/GaN multilayers used as n‐type cladding layers in edge emitting laser diodes
- Author
-
Jean-Yves Duboz, Hyonju Kim-Chauveau, A. P. Vajpeyi, Philippe De Mierry, Pleun Maaskant, Mahbub Akther, Eric Frayssinet, R. Charash, and Brian Corbett
- Subjects
Materials science ,business.industry ,Doping ,Condensed Matter Physics ,Laser ,Cladding (fiber optics) ,law.invention ,law ,Lattice (order) ,Optoelectronics ,business ,Conduction band discontinuity ,Diode ,Voltage - Abstract
The current transport properties of an n -doped, lattice matched AlInN layer with multiple, periodic GaN insertions are reported. Samples with three and seven insertions were grown and mesa structures were etched through the AlInN structures to different depths to determine the voltage contribution from each heterointerface. The quality of the AlInN surface improved with the GaN insertions and with reducing the thickness of the individual AlInN layers from 80 nm to 55 nm. Simulations suggest that the large conduction band discontinuity can lead to high turn on voltages which can be reduced by high levels of doping. Current-voltage measurements through the full structure show a diode characteristic which is temperature activated. A quasi-linear current-voltage characteristic is measured when the current is driven only through the uppermost GaN interlayer with 80 nm thick AlInN layers, indicating current leakage through defects in these layers (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Published
- 2011
22. Monolithic white light emitting diodes using a (Ga,In)N-based light converter
- Author
-
Jean Massies, Philippe De Mierry, Sakhawat Hussain, Sébastien Chenot, Benjamin Damilano, Hyonju Kim-Chauveau, Kaddour Lekhal, Julien Brault, Philippe Vennéguès, and Eric Frayssinet
- Subjects
Materials science ,business.industry ,Phosphor ,Gallium nitride ,Indium gallium nitride ,law.invention ,chemistry.chemical_compound ,Optics ,chemistry ,law ,Optoelectronics ,Metalorganic vapour phase epitaxy ,business ,Quantum well ,Diode ,Light-emitting diode ,Molecular beam epitaxy - Abstract
Commercially available inorganic white light emitting diodes (LEDs) are essentially based on the combination of a blue InGaN based LED chip covered by a long wavelength emitting (yellow, red) phosphor. We propose to avoid this step of phosphor deposition by taking advantage of the fact that yellow to red emission can be achieved using InGaN alloys. By stacking an InGaN/GaN multiple quantum well (QW) emitting in the yellow, acting as a light converter, and a short wavelength blue-violet pump LED grown on top, white light emission can be obtained. Furthermore, if we extend the emission spectrum of the light converter into the red, a warm white light color is demonstrated when a pump LED is grown on top. However, the high In content InGaN QWs of the light converter have a low thermal stability and the QW efficiency tends to degrade during the growth of the pump LED. Three different solutions are explored to avoid the thermal degradation of the light converter. The monolithic LED structures were grown by molecular beam epitaxy (MBE), by a combination of both MBE and metal-organic chemical vapor phase epitaxy (MOCVD), or by a low temperature full-MOCVD process. The best results are obtained using a complete MOCVD growth process. The structure and the MOCVD growth conditions are specifically adapted in order to avoid the thermal degradation of the large In composition InGaN QWs emitting at long wavelength during the growth of the subsequent layers.
- Published
- 2014
23. Growth of GaN Nanostructures with Polar and Semipolar Orientations for the Fabrication of UV LEDs
- Author
-
Borge Vinter, Julien Brault, Philippe De Mierry, Gaetano Randazzo, Benjamin Damilano, Aimeric Courville, Philippe Vennéguès, A. Kahouli, M. Korytov, Thierry Bretagnon, Jean Massies, Mathieu Leroux, Sébastien Chenot, Daniel Rosales, Bernard Gil, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and LABEX GAEX
- Subjects
010302 applied physics ,Materials science ,Nanostructure ,Photoluminescence ,business.industry ,Quantum-confined Stark effect ,Doping ,Gallium nitride ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] ,0103 physical sciences ,Optoelectronics ,Spontaneous emission ,0210 nano-technology ,business ,Molecular beam epitaxy ,Light-emitting diode - Abstract
Al, Ga)N light emitting diodes (LEDs), emitting over a large spectral range from 360 nm (GaN) down to 210 nm (AlN), have been successfully fabricated over the last decade. Clear advantages compared to the traditional mercury lamp technology (e.g. compactness, low-power operation, lifetime) have been demonstrated. However, LED efficiencies still need to be improved. The main problems are related to the structural quality and the p-type doping efficiency of (Al, Ga) N. Among the current approaches, GaN nanostructures, which confine carriers along both the growth direction and the growth plane, are seen as a solution for improving the radiative recombination efficiency by strongly reducing the impact of surrounding defects. Our approach, based on a 2D - 3D growth mode transition in molecular beam epitaxy, can lead to the spontaneous formation of GaN nanostructures on (Al, Ga)N over a broad range of Al compositions. Furthermore, the versatility of the process makes it possible to fabricate nanostructures on both (0001) oriented "polar" and (11 (2) over bar 2) oriented "semipolar" materials. We show that the change in the crystal orientation has a strong impact on the morphological and optical properties of the nanostructures. The influence of growth conditions are also investigated by combining microscopy (SEM, TEM) and photoluminescence techniques. Finally, their potential as UV emitters will be discussed and the performances of GaN / (Al, Ga) N nanostructure-based LED demonstrators are presented.
- Published
- 2014
24. Advances on MBE Selective Area Growth of III- Nitride nanostructures: from nanoLEDs to pseudo substrates
- Author
-
Jesús Zúñiga-Pérez, Enrique Calleja, Peter Veit, A. Bengoechea-Encabo, Xiang Kong, David Lopez-Rormero, Achim Trampert, Silke Petzold, Pierre Lefebvre, Miguel Sanchez-Garcia, Gordon Schmidt, Philippe De Mierry, Steven Albert, Francesca Barbagini, Frank Bertram, Jürgen Christen, Marcus Müller, Uwe Jahn, Departamento de Ingeniería Electrónica and ISOM (ETSI Telecomunicacion), Universidad Politécnica de Madrid (UPM)-Ciudad Universitaria, Escuela Técnica Superior de Ingenieros de Telecomunicación [Madrid] (ETSI), Universidad Politécnica de Madrid (UPM), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Paul-Drude-Institut für Festkörperelektronik (PDI), Otto-von-Guericke University [Magdeburg] (OVGU), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Ministère espagnol de la recherche, projets : CAM/P2009/ESP-1503 and MICINN MAT2011-26703., Chairman: M.Shur - Rensselaer Polytechnic Institute,Troy, NY, USA, European Project: 228999,EC:FP7:NMP,FP7-NMP-2008-LARGE-2,SMASH(2009), European Project: 280694,EC:FP7:NMP,FP7-NMP-2011-SMALL-5,GECCO(2012), European Project: 213238,EC:FP7:PEOPLE,FP7-PEOPLE-2007-1-1-ITN,RAINBOW(2008), Otto-von-Guericke-Universität Magdeburg = Otto-von-Guericke University [Magdeburg] (OVGU), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)
- Subjects
pseudo substrates ,Photoluminescence ,Fabrication ,Nanostructure ,Materials science ,single color emission ,non-polar ,Nanotechnology ,Nitride ,law.invention ,Selective area growth ,GaN ,law ,nanostructures ,semi-polar ,coalescence ,Electrical and Electronic Engineering ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Coalescence (physics) ,InGaN ,business.industry ,LED ,Física ,white-light emission ,Aspect ratio (image) ,Electronic, Optical and Magnetic Materials ,core-shell ,Hardware and Architecture ,Sapphire ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,Optoelectronics ,photoluminescence ,business ,Molecular beam epitaxy ,Light-emitting diode - Abstract
The aim of this work is to provide an overview on the recent advances in the selective area growth (SAG) of ( In ) GaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. The first three sections deal with the basic growth mechanisms of GaN SAG and the emission control in the entire ultraviolet to infrared range, including approaches for white light emission, using InGaN disks and thick segments on axial nanocolumns. SAG of axial nanostructures is developed on both GaN /sapphire templates and GaN -buffered Si (111). As an alternative to axial nanocolumns, section 4 reports on the growth and characterization of InGaN / GaN core-shell structures on an ordered array of top-down patterned GaN microrods. Finally, section 5 reports on the SAG of GaN , with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the templates is strongly reduced as indicated by a dramatic improvement of the optical properties. In the case of SAG on non-polar (11-22) templates, the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of these nanostructures.
- Published
- 2013
25. Selective heteroepitaxy on deeply grooved substrate: A route to low cost semipolar GaN platforms of bulk quality
- Author
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Philippe De Mierry, Denis Martin, Florian Tendille, Philippe Vennéguès, and Nicolas Grandjean
- Subjects
010302 applied physics ,Fabrication ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Wide-bandgap semiconductor ,Cathodoluminescence ,02 engineering and technology ,Substrate (electronics) ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,Crystal ,0103 physical sciences ,Sapphire ,Optoelectronics ,Dislocation ,0210 nano-technology ,business - Abstract
Semipolar GaN crystal stripes larger than 100 mu m with dislocation densities below 5 x 10(6) cm(-2) are achieved using a low cost fabrication process. An original sapphire patterning procedure is proposed, enabling selective growth of semipolar oriented GaN stripes while confining the defects to specific areas. Radiative and non-radiative crystalline defects are investigated by cathodoluminescence and can be correlated to the development of crystal microstructure during the growth process. A dislocation reduction mechanism, supported by transmission electron microscopy, is proposed. This method represents a step forward toward low-cost quasi-bulk semipolar GaN epitaxial platforms with an excellent structural quality which will allow for even more efficient III-nitride based devices. Published by AIP Publishing.
- Published
- 2016
26. Substrates for III-Nitride-Based Electroluminescent Diodes
- Author
-
Philippe de Mierry
- Subjects
Materials science ,business.industry ,Optoelectronics ,Light emission ,Nitride ,Electroluminescence ,business ,Thermal expansion ,Diode - Published
- 2010
27. Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate
- Author
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Maxime Hugues, M. Teisseire, Philippe Vennéguès, Florian Tendille, and Philippe De Mierry
- Subjects
Materials science ,business.industry ,Stacking ,Cathodoluminescence ,Chemical vapor deposition ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Metal ,visual_art ,Materials Chemistry ,Sapphire ,visual_art.visual_art_medium ,Optoelectronics ,Sapphire substrate ,Electrical and Electronic Engineering ,Dislocation ,business ,Layer (electronics) - Abstract
Thanks to the use of two successive selective growths by metal organic chemical vapor deposition reactor, high quality semipolar (11-22) GaN with a homogenous defect repartition over the surface was achieved. The procedure starts with a first selective growth on a patterned sapphire substrate, leading to continuous stripes of three dimensional (3D) GaN crystals of low defect density. Then, a second selective growth step is achieved by depositing a SiNx nano-mask and a low temperature GaN nano-layer on the top of the GaN stripes. Hereby, we demonstrate an original way to obtain a homoepitaxial selective growth on 3D GaN crystals by taking advantage of the different crystallographic planes available. Basal stacking faults (BSFs) are generated during this second selective growth but could be eliminated by using a three-step growth method in which elongated voids are created above the defective area. For a fully coalesced sample grown using the 2 step method, dislocation density of 1.2 × 108 cm−2 and BSFs density of 154 cm−1 with a homogenous distribution have been measured by cathodoluminescence at 80 K. Consequently the material quality of this coalesced semipolar layer is comparable to the one of polar GaN on c-plane sapphire.
- Published
- 2015
28. Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties
- Author
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Sakhawat Hussain, Benjamin Damilano, Kaddour Lekhal, Philippe Vennéguès, Philippe De Mierry, and Hyonju Kim-Chauveau
- Subjects
Diffraction ,Photoluminescence ,Materials science ,business.industry ,chemistry.chemical_element ,Condensed Matter Physics ,Epitaxy ,Electronic, Optical and Magnetic Materials ,law.invention ,Wavelength ,chemistry ,law ,Materials Chemistry ,Sapphire ,Optoelectronics ,Electrical and Electronic Engineering ,Electron microscope ,business ,Indium ,Quantum well - Abstract
The difference of growth temperatures between InGaN quantum wells and GaN barriers has detrimental effects on the properties of the wells. Different capping processes of InGaN quantum well with a thin AlGaN layer have been investigated to prevent these effects. Both structural and optical properties of the samples, grown on c-plane sapphire substrates by metalorganic vapor phase epitaxy, were studied through transmission electron microscopy (TEM), x-ray diffraction and room temperature photoluminescence. The average quantum well thickness and its indium composition were determined by digital processing of lattice fringes in cross-sectional TEM images. From the analysis of the well thickness distribution, it is shown that AlGaN as a capping layer helps to compensate an unwanted undulation at the upper InGaN QW-barrier interface. Moreover, when deposited at the same temperature as InGaN, the AlGaN layer is effective in avoiding or reducing the evaporation and/or diffusion of indium from InGaN wells, which results in the thinning of the well. It therefore helps to extend the emission wavelength up to 540 nm with a reduced degradation of the room temperature photoluminescence efficiency.
- Published
- 2014
29. Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter
- Author
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Philippe Vennéguès, Jean Massies, Hyonju Kim-Chauveau, Julien Brault, Benjamin Damilano, Kaddour Lekhal, Philippe De Mierry, Eric Frayssinet, and Sakhawat Hussain
- Subjects
Materials science ,business.industry ,General Engineering ,Phase (waves) ,General Physics and Astronomy ,Color temperature ,Electroluminescence ,Epitaxy ,law.invention ,Wavelength ,Optics ,law ,Optoelectronics ,business ,Quantum well ,Light-emitting diode ,Diode - Abstract
Monolithic InGaN-based light-emitting diodes (LEDs) using a light converter fully grown by metal organic vapor phase epitaxy are demonstrated. The light converter, consisting of 10–40 InGaN/GaN quantum wells, is grown first, followed by a violet pump LED. The structure and growth conditions of the pump LED are specifically adapted to avoid thermal degradation of the light converter. Electroluminescence analysis shows that part of the pump light is absorbed by the light converter and reemitted at longer wavelength. Depending on the emission wavelength of the light converter, different LED colors are achieved. In particular, for red-emitting light converters, a color temperature of 2100 K corresponding to a tint between warm white and candle light is demonstrated.
- Published
- 2013
30. Comparison between Polar (0001) and Semipolar (11\bar22) Nitride Blue–Green Light-Emitting Diodes Grown onc- andm-Plane Sapphire Substrates
- Author
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Philippe De Mierry, Tobias Guehne, Gilles Nataf, M. Nemoz, Sébastien Chenot, and Emmanuel Beraudo
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,General Engineering ,General Physics and Astronomy ,chemistry.chemical_element ,Green-light ,Electroluminescence ,Blueshift ,law.invention ,chemistry ,law ,Sapphire ,Optoelectronics ,Metalorganic vapour phase epitaxy ,business ,Indium ,Quantum well ,Light-emitting diode - Abstract
We present a comparative study of semipolar (1122) and polar (0001) (In,Ga)N/GaN light emitting diodes grown simultaneously under equal conditions by metalorganic vapor deposition. These structures are grown on 2-in. GaN templates with two different (1122) and (0001) orientations. The templates were formerly obtained by MOCVD, on (1010) m-plane and (0001) c-plane sapphire substrates. The semipolar quantum wells exhibit a 30% higher indium content compared to the polar quantum wells. This was confirmed by complementary X-ray diffraction and energy dispersive X-ray spectroscopy measurements on thick (~60 nm) InGaN layers grown on (1122) and (0001) GaN templates. The results of electroluminescence and photocurrent show that the emission of semipolar QWs is strongly red-shifted with respect to the band edge. This large Stokes' shift is attributed to carrier localization at potential minima induced by indium composition fluctuations. A strong blueshift under forward DC injection is observed for the semipolar (Ga,In)N diodes. Since a reduced piezoelectric field is expected in the semipolar diodes, the observed blueshift is mainly due to carrier filling of the localized states.
- Published
- 2009
31. Green InGaN Light-Emitting Diodes Grown on Silicon (111) by Metalorganic Vapor Phase Epitaxy
- Author
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Mathieu Leroux, Eric Feltin, A. Bouillé, Bernard Beaumont, Pierre Gibart, S. Dalmasso, Philippe De Mierry, Helge Haas, and Hacene Lahreche
- Subjects
Materials science ,Silicon ,business.industry ,General Engineering ,General Physics and Astronomy ,chemistry.chemical_element ,Electroluminescence ,Epitaxy ,Active layer ,law.invention ,chemistry ,law ,Optoelectronics ,Metalorganic vapour phase epitaxy ,business ,Quantum well ,Diode ,Light-emitting diode - Abstract
We report on the growth and characterization of green InGaN light-emitting diodes (LEDs) grown on Si (111) substrates using metalorganic vapor phase epitaxy. A single InGaN quantum well active layer has been used. The optical qualities of InGaN on Si(111) and the p–doping efficiency of GaN are discussed. The turn-on voltage of the LED is 6.8 V and the operating voltage is 10.7 V at 20 mA. Electroluminescence of the LEDs starts at a forward bias of 3.5 V. The electroluminescence peaks at 508 nm, with a full-width at half maximum of 52 nm. An optical output power of 6 µW (in ∼ 8π/5 sr) was achieved for an applied current of 20 mA.
- Published
- 2001
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