Back to Search
Start Over
Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density
- Source :
- Journal of Crystal Growth, Journal of Crystal Growth, Elsevier, 2019, 526, pp.125235. ⟨10.1016/j.jcrysgro.2019.125235⟩, Journal of Crystal Growth, 2019, 526, pp.125235. ⟨10.1016/j.jcrysgro.2019.125235⟩
- Publication Year :
- 2019
- Publisher :
- HAL CCSD, 2019.
-
Abstract
- International audience; Nanopendeo-epitaxy of gallium nitride (GaN) is considered in this study as a way of producing freestanding GaN with reduced strain and threading dislocation density (TDD) for optoelectronic applications. The novelty of this work lies in the use of silicon on insulator (SOI) substrates patterned into nano-pillars down to the buried oxide (BOX). We actually want to benefit from the creeping properties of SiO2 at the growth temperature of GaN for strain relaxation and grain-boundary dislocations reduction. In this paper, we report on the fabrication of 40×40 µm 2 and 300×300 µm 2 freestanding GaN platelets, up to 10 µm-thick, spontaneously separated from the initial pillars. Structural and optical characterizations show that the platelets are crack-free and almost fully relaxed, with a TDD of ∼ 4×10 8 /cm 2. We underline the different benefits of this approach, but most importantly, we believe that it will be the founding-brick for transferable GaN-based devices.
- Subjects :
- Fabrication
Materials science
Nanostructure
Silicon
Silicon on insulator
chemistry.chemical_element
Gallium nitride
02 engineering and technology
Epitaxy
01 natural sciences
Inorganic Chemistry
chemistry.chemical_compound
Metalorganic vapor phase epitaxy
Defects
0103 physical sciences
Nano
Materials Chemistry
ComputingMilieux_MISCELLANEOUS
010302 applied physics
[PHYS]Physics [physics]
business.industry
021001 nanoscience & nanotechnology
Condensed Matter Physics
Nanostructures
chemistry
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Optoelectronics
Dislocation
0210 nano-technology
business
Pendeo-Epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth, Journal of Crystal Growth, Elsevier, 2019, 526, pp.125235. ⟨10.1016/j.jcrysgro.2019.125235⟩, Journal of Crystal Growth, 2019, 526, pp.125235. ⟨10.1016/j.jcrysgro.2019.125235⟩
- Accession number :
- edsair.doi.dedup.....c583e1644212c8b8afe27bf7ae2991dc