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Solar-blind deep ultraviolet (DUV) photodetectors with high responsivity (R) and fast response speed are crucial for practical applications in astrophysical analysis, environmental pollution monitoring, and communication. Recently, 2D tellurium has emerged as a potential optoelectronic material because of its excellent photoelectric properties. In this study, solar-blind DUV photodetectors are demonstrated based on solution-synthesized and air-stable quasi-2D Te nanosheets (Te NSs). An R of 6.5 × 104 A/W at 261 nm and an external quantum efficiency (EQE) of higher than 2.26 × 106% were obtained, which are highest among most other 2D material-based solar-blind DUV photodetectors. Moreover, the photoelectric performance of the quasi-2D Te-based photodetector exhibited good stability even after ambient exposure for 90 days without any encapsulation. These results indicate that quasi-2D Te NSs provide a viable approach for developing solar-blind DUV photodetectors with ultrahigh R and EQE.

Due to their excellent and tailorable optoelectronic performance, low cost, facile fabrication, and compatibility with flexible substrates, solution-processed inorganic and hybrid photo-active materials have attracted extensive interest for next-generation photodetector applications. This review gives a comprehensive compilation of solution-processed photodetectors. The basic structures of the device and important parameters of photodetectors will be firstly summarized. Then the development of various solution processing technologies containing solution synthesis and liquid phase film-forming processes for the preparation of semiconductor films is described. From the materials science point of view, we give a comprehensive overview about the current status of solution processed semiconductor materials including inorganic and hybrid photo-active materials for the application of photodetectors. Moreover, challenges and future trends in the field of solution-processed photodetectors are proposed.

The previous decades have witnessed increasing prevalence of research on chemiresistive gas sensors due to their high response, simple configuration and low cost. Chemiresistive gas sensors based on low-dimensional (0D, 1D and 2D) nanomaterials are remarkable because their high specific areas, abundant active sites and quantum effects in a certain dimension endow them with extraordinary gas sensing performance. Additionally, it has been gradually demonstrated that fabricating nanocomposites from various low-dimensional nanomaterials can further improve their sensing performance. The nanocomposites are generally in the form of 0D nanostructure-functionalized 1D or 2D nanomaterials. This review aims to elaborate the functionalization of 0D nanomaterials, including metal oxide semiconductors (MOSs), noble metals (NMs), metal chalcogenides (MCs), metal organics, conductive polymers (CPs) and others, on various 1D or 2D backbone nanomaterials. The content includes methods for depositing 0D nanomaterials on 1D or 2D backbones as well as the gas sensing performance and underlying mechanisms of 0D–1D and 0D–2D nanocomposites.

Based on the extensive investigation on graphene and graphene derivatives asymmetrically functionalized with a variety of molecular groups and the concept of Janus materials with asymmetric facial properties, Janus two-dimensional (2D) materials as derivatives of the 2D material family, including Janus graphene, Janus transition metal chalcogenides, etc., have attracted much attention in recent years. Janus 2D materials have been demonstrated experimentally and theoretically to possess unique properties such as an out-of-plane piezoelectric polarization and strong Rashba effect due to their out-of-plane asymmetry. Here, the recent progress of emerging Janus 2D materials, including Janus graphene, prediction and fabrication of various different Janus 2D materials and Janus 2D van der Waals heterostructures, is presented. The investigations on the unique properties and potential device applications of Janus 2D materials are summarized. Finally, the conclusion and prospects for the future explorations on Janus 2D materials are also provided.

Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes (γ-, ϵ- and β-phase) of InSe, only the crystal lattice of InSe in β-phase (β-InSe) belongs to a non-symmetry point group of $D_{6h}^4$, which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of β-InSe-based optoelectronic devices. Therefore, we prepare the stable p-type 2D-layered β-InSe via temperature gradient method. The anisotropic Raman, transport and photoresponse properties of β-InSe have been experimentally and theoretically proven, showing that the β-InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage, respectively. The appealing anisotropic properties demonstrated in this work clearly identify β-InSe as a competitive candidate for filter-free polarization-sensitive photodetectors.

Over the past decade, two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted tremendous research interest for future electronics owing to their atomically thin thickness, compelling properties and various potential applications. However, interface engineering including contact optimization and channel modulations for 2D TMDCs represents fundamental challenges in ultimate performance of ultrathin electronics. This article provides a comprehensive overview of the basic understanding of contacts and channel engineering of 2D TMDCs and emerging electronics benefiting from these varying approaches. In particular, we elucidate multifarious contact engineering approaches such as edge contact, phase engineering and metal transfer to suppress the Fermi level pinning effect at the metal/TMDC interface, various channel treatment avenues such as van der Waals heterostructures, surface charge transfer doping to modulate the device properties, and as well the novel electronics constructed by interface engineering such as diodes, circuits and memories. Finally, we conclude this review by addressing the current challenges facing 2D TMDCs towards next-generation electronics and offering our insights into future directions of this field.

Nanoengineered Heterostructures In article number 2100503, Zhinan Guo, Han Zhang, Paras N. Prasad, and co‐workers report a nanoengineered heterostructure for the first time demonstration of an nanointerface using an inserted graphene layer between black phosphorus (BP) and InSe which inhibits interlayer recombination and greatly improved photodetection performances. [Image: see text]

The electrochemical nitrogen reduction reaction (eNRR) provides a sustainable way to generate ammonia (NH3) but its Faradaic efficiency (FE) is relatively low and could be further improved, especially on the highly active molybdenum carbide (Mo2C) electrocatalyst. Our theoretical calculations suggest that unlike substitute doping model, interstitial Fe doping into Mo2C is highly eNRR-selective due to decreasing hydrogen evolution activity and unique surface-hydrogenation mechanism on negatively charged Mo sites around Fe atoms. Inspired by this prediction, we successfully developed a novel interstitial Fe doped Mo2C electrocatalyst by the pyrolysis of Fe-doped Mo/Zn bimetallic imidazolate frameworks (Fe-Mo/Zn BIFs) as a precursor where Fe atoms substitute Zn sites to obtain the spatial confinement effect. When evaluated in eNRR catalysis, Fe/Mo2C catalyst therefore exhibits a much higher FE of 20.1% at −0.45 V vs. RHE (reversible hydrogen electrode), which is almost double that of pristine Mo2C and substitute type. Moreover, the Fe/Mo2C catalyst also exhibits high ammonia yield rate with excellent durability over the six continuous cycles.

Great success in 2D van der Waals (vdW) heterostructures based photodetectors is obtained owing to the unique electronic and optoelectronic properties of 2D materials. Performance of photodetectors based 2D vdW heterojunctions at atomic scale is more sensitive to the nanointerface of the heterojunction than conventional bulk heterojunction. Here, a nanoengineered heterostructure for the first‐time demonstration of a nanointerface using an inserted graphene layer between black phosphorus (BP) and InSe which inhibits interlayer recombination and greatly improves photodetection performances is presented. In addition, a transition of the transport characteristics of the device is induced by graphene, from diffusion motion of minority carriers to drift motion of majority carriers. These two reasons together with an internal photoemission effect make the BP/G/InSe‐based photodetector have ultrahigh specific detectivity at room temperature. The results demonstrate that high‐performance vdW heterostructure photodetectors can be achieved through simple structural manipulation of the heterojunction interface on nanoscale., A nanoscale interface engineering in which few‐layer graphene (G) is inserted into the interlayer of black phosphorus (BP)/InSe, forming a 2D BP/G/InSe van der Waals heterojunction, is introduced. Effective electron transfer from BP to InSe is facilitated by the insertion of G, which induces a better photoresponse performance of the BP/G/InSe device.

Low-symmetry layered materials such as black phosphorus (BP) have been revived recently due to their high intrinsic mobility and in-plane anisotropic properties, which can be used in anisotropic electronic and optoelectronic devices. Since the anisotropic properties have a close relationship with their anisotropic structural characters, especially for materials with low-symmetry, exploring new low-symmetry layered materials and investigating their anisotropic properties have inspired numerous research efforts. In this paper, we review the recent experimental progresses on low-symmetry layered materials and their corresponding anisotropic electrical transport, magneto-transport, optoelectronic, thermoelectric, ferroelectric, and piezoelectric properties. The boom of new low-symmetry layered materials with high anisotropy could open up considerable possibilities for next-generation anisotropic multifunctional electronic devices.

The growth and wetting of water on two-dimensional(2D) materials are important to understand the development of 2D material based electronic, optoelectronic, and nanomechanical devices. Here, we visualize the liquefaction processes of water on the surface of graphene, MoS2 and black phosphorus (BP) via optical microscopy. We show that the shape of the water droplets forming on the surface of BP, which is anisotropic, is elliptical. In contrast, droplets are rounded when they form on the surface of graphene or MoS2, which do not possess orthometric anisotropy. Molecular simulations show that the anisotropic liquefaction process of water on the surface of BP is attributed to the different binding energies of H2O molecules on BP along the armchair and zigzag directions. The results not only reveal the anisotropic nature of water liquefaction on the BP surface but also provide a way for fast and nondestructive determination of the crystalline orientation of BP., Structural anisotropy of surfaces determines properties relevant for applications. Here the authors observe a relationship between the shape of water droplets forming on graphene, MoS2and black phosphorous and the surface structure, proposing a method to determine lattice orientation by optical microscopy.

Density functional theory calculations of the layer (L)-dependent electronic band structure, work function and optical properties of &beta, InSe have been reported. Owing to the quantum size effects (QSEs) in &beta, InSe, the band structures exhibit direct-to-indirect transitions from bulk &beta, InSe to few-layer &beta, InSe. The work functions decrease monotonically from 5.22 eV (1 L) to 5.0 eV (6 L) and then remain constant at 4.99 eV for 7 L and 8 L and drop down to 4.77 eV (bulk &beta, InSe). For optical properties, the imaginary part of the dielectric function has a strong dependence on the thickness variation. Layer control in two-dimensional layered materials provides an effective strategy to modulate the layer-dependent properties which have potential applications in the next-generation high performance electronic and optoelectronic devices.

2D layered materials turn out to be the most attractive hotspot in materials for their unique physical and chemical properties. A special class of 2D layered material refers to materials exhibiting phase transition based on environment variables. Among these materials, transition metal dichalcogenides (TMDs) act as a promising alternative for their unique combination of atomic‐scale thickness, direct bandgap, significant spin–orbit coupling and prominent electronic and mechanical properties, enabling them to be applied for fundamental studies as catalyst materials. Metal phosphorous trichalcogenides (MPTs), as another potential catalytic 2D phase transition material, have been employed for their unusual intercalation behavior and electrochemical properties, which act as a secondary electrode in lithium batteries. The preparation of 2D TMD and MPT materials has been extensively conducted by engineering their intrinsic structures at the atomic scale. In this study, advanced synthesis methods of preparing 2D TMD and MPT materials are tested, and their properties are investigated, with stress placed on their phase transition. The surge of this type of report is associated with water‐splitting catalysis and other catalytic purposes. This study aims to be a guideline to explore the mentioned 2D TMD and MPT materials for their catalytic applications., 2D phase transition materials, including transition metal dichalcogenides (TMDs) and metal phosphorous trichalcogenides (MPTs), attract researchers' interests for their unique combination of large surface area, direct bandgap, intrigue chemical, and mechanical properties. Great efforts are devoted to preparing 2D TMD and MPT materials by engineering their intrinsic structures at the atomic scale, aiming to achieve active catalyst toward catalytic purposes.

Efficiently tuning the output intensity of an optical device is of vital importance for the establishment of optical interconnects and networks. Thermo-optical modulation is an easily implemented and convenient approach and has been widely employed in photonic devices. In this paper, we proposed a novel thermo-optical modulator based on a microfiber knot resonator (MKR) and graphene heater. Upon applying voltage to graphene, the resonant property of the MKR could be thermally tuned with a maximum phase shift of 2.1π. Intensity modulation shows a fast optical response time thanks to the high thermal conductivity of graphene and the thin microfiber diameter of the MKR.

From the group-IIIA (borophene), to the group-IVA (silicene, germanene and stanine), as well as the group-VA (phosphorene, arsenene, antimonene and bismuthene) and even the group-VIA (selenene and tellurene nanosheets), these two-dimensional (2D) monoelemental materials are highly similar to graphene in lattice structure, and they can also be collectively referred to as Xenes. However, the unique specific atomic arrangement of these materials gives rise to a vast diversity of properties, and these single element 2D materials as graphene analogues are the most chemically tractable materials for synthetic exploration, thus attracting widespread attention and research. Intrinsic defects, as an defects inevitably introduced in the of experimental preparation, and extrinsic defects, as an artificially introduced and controllable way, both of them can effectively improve the environmental stability of single element materials and regulate the properties of Xenes. Herein, a review of the historical work about the properties and application of defective 2D monoelemental materials is presented. Based on the structure and properties of original single element 2D materials, the change of electronic and optoelectronic properties of these materials from different main groups under the action of different defects are classified and compared. In addition, the existing methods of realizing defects of 2D Xenes-based materials are summarized, and the application of the defects engineering in the field of optoelectronic devices, energy storage and conversion, catalysts as well are also comprehensively searched and reviewed. Finally, this review provides the prospect and challenge for the preparation and application of defective 2D monoelemental materials on the basis of the current research and development.

2D crystals are emerging new materials in multidisciplinary fields including condensed state physics, electronics, energy, environmental engineering, and biomedicine. To employ 2D crystals for practical applications, these nanoscale crystals need to be processed into macroscale materials, such as suspensions, fibers, films, and 3D macrostructures. Among these macromaterials, fibers are flexible, knittable, and easy to use, which can fully reflect the advantages of the structure and properties of 2D crystals. Therefore, the fabrication and application of 2D crystal-based fibers is of great importance for expanding the impact of 2D crystals. In this Review, 2D crystals that are successfully prepared are overviewed based on their composition of elements. Subsequently, methods for preparing 2D crystals, 2D crystals dispersions, and 2D crystal-based fibers are systematically introduced. Then, the applications of 2D crystal-based fibers, such as flexible electronic devices, high-efficiency catalysis, and adsorption, are also discussed. Finally, the status-of-quo, perspectives, and future challenges of 2D crystal-based fibers are summarized. This Review provides directions and guidelines for developing new 2D crystal-based fibers and exploring their potentials in the fields of smart wearable devices.

Owing to its thickness-modulated direct energy band gap, relatively strong light–matter interaction, and unique nonlinear optical response at a long wavelength, few-layer black phosphorus, or phosphorene, becomes very attractive in ultrafast photonics applications. Herein, we synthesized a graphene/phosphorene nano-heterojunction using a liquid phase-stripping method. Tiny lattice distortions in graphene and phosphorene suggest the formation of a nano-heterojunction between graphene and phosphorene nanosheets. In addition, we systematically investigate their nonlinear optical responses at different wavelength regimes. Our experiments indicate that the combined advantages of ultrafast relaxation, broadband response in graphene, and the strong light–matter interaction in phosphorene can be combined together by nano-heterojunction. We have further fabricated two-dimensional (2D) nano-heterojunction based optical saturable absorbers and integrated them into an erbium-doped fiber laser to demonstrate the generation of a stable ultrashort pulse down to 148 fs. Our results indicate that a graphene/phosphorene nano-heterojunction can operate as a promising saturable absorber for ultrafast laser systems with ultrahigh pulse energy and ultranarrow pulse duration. We believe this work opens up a new approach to designing 2D heterointerfaces for applications in ultrafast photonics and other research. The fabrication of a 2D nano-heterojunction assembled from stacking different 2D materials, via this facile and scalable growth approach, paves the way for the formation and tuning of new 2D materials with desirable photonic properties and applications.

Studies of the nonlinear optical phenomena that describe the light-matter interactions in 2D crystalline materials have promoted a diverse range of photonic applications. MXene, as a recently developed new 2D material, has attracted considerable attention because of its graphene-like but highly tunable and tailorable electronic/optical properties. In this study, we systematically characterize the nonlinear optical response of MXene Ti3C2Tx nanosheets over the spectral range of 800 nm to 1800 nm. A large effective nonlinear absorption coefficient (βeff∼-10−21 m2/V2) due to saturable absorption is observed for all of the testing wavelengths. The contribution of saturable absorption is two orders of magnitude higher than other lossy nonlinear absorption processes, and the amplitude of βeff strongly depends on the light bleaching level. A negative nonlinear refractive index (n2∼-10−20 m2/W) with value comparable to that of the intensively studied graphene was demonstrated for the first time. These results demonstrate the efficient broadband light signal manipulating capabilities of Ti3C2Tx, which is only one member of the large MXene family. The capability of an efficient broadband optical switch is strongly confirmed using Ti3C2Tx as saturable absorbers for mode-locking operation at 1066 nm and 1555 nm, respectively. A highly stable femtosecond laser with pulse duration as short as 159 fs in the telecommunication window is readily obtained. Considering the diversity of the MXene family, this study may open a new avenue to advanced photonic devices.