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Direct write with a liquid precursor using an ion beam in situ, allows fabrication of nanostructures with higher purity than using gas phase deposition. Specifically, positively charged helium ions, when compared to electrons, localize the reaction zone to a single-digit nanometer scale. However, to control the interaction of the ion beam with the liquid precursor, as well as enable single digit fabrication, a comprehensive understanding of the radiolytic process, and the role of secondary electrons has to be developed. Here, we demonstrate an approach for directly writing platinum nanostructures from aqueous solution using a helium ion microscope, and discuss possible mechanisms for the beam-induced particle growth in the framework of Born-Oppenheimer and real-time electron dynamics models. We illustrate the nanoparticle nucleation and growth parameters through data analysis of in situ acquired movie data, and correlate these results to a fully encompassing, time-dependent, quantum dynamical simulation that takes into account both quantum and classical interactions. Finally, sub-15 nm resolution platinum structures generated in liquid are demonstrated.

Rapid advances in nanoscience rely on continuous improvements of material manipulation at near-atomic scales. Currently, the workhorse of nanofabrication is resist-based lithography and its various derivatives. However, the use of local electron, ion, and physical probe methods is expanding, driven largely by the need for fabrication without the multistep preparation processes that can result in contamination from resists and solvents. Furthermore, probe-based methods extend beyond nanofabrication to nanomanipulation and to imaging which are all vital for a rapid transition to the prototyping and testing of devices. In this work we study helium ion interactions with the surface of bulk copper indium thiophosphate CuM(III)P2X6 (M = Cr, In; X= S, Se), a novel layered 2D material, with a Helium Ion Microscope (HIM). Using this technique, we are able to control ferrielectric domains and grow conical nanostructures with enhanced conductivity whose material volumes scale with the beam dosage. Compared to the copper indium thiophosphate (CITP) from which they grow, the nanostructures are oxygen rich, sulfur poor, and with virtually unchanged copper concentration as confirmed by energy-dispersive X-ray spectroscopy (EDX). Scanning electron microscopy (SEM) imaging contrast as well as scanning microwave microscopy (SMM) measurements suggest enhanced conductivity in the formed particles, whereas atomic force microscopy (AFM) measurements indicate that the produced structures have lower dissipation and are softer as compared to the CITP.

Serial block-face electron microscopy (SBEM) provides nanoscale 3D ultrastructure of embedded and stained cells and tissues in volumes of up to 107 µm3. In SBEM, electrons with 1–3 keV energies are incident on a specimen block, from which backscattered electron (BSE) images are collected with x, y resolution of 5–10 nm in the block-face plane, and successive layers are removed by an in situ ultramicrotome. Spatial resolution along the z-direction, however, is limited to around 25 nm by the minimum cutting thickness. To improve the z-resolution, we have extracted depth information from BSE images acquired at dual primary beam energies, using Monte Carlo simulations of electron scattering. The relationship between depth of stain and ratio of dual-energy BSE intensities enables us to determine 3D structure with a ×2 improvement in z-resolution. We demonstrate the technique by sub-slice imaging of hepatocyte membranes in liver tissue.

“High resolution SEM imaging” refers to the capability of discerning fine-scale spatial features of a specimen. Such features may be free-standing objects or structures embedded in a matrix. The definition of “fine-scale” depends on the application, which may involve sub-nanometer features in the most extreme cases. The most important factor determining the limit of spatial resolution is the footprint of the incident beam as it enters the specimen. Depending on the level of performance of the electron optics, the limiting beam diameter can be as small as 1 nm or even finer. However, the ultimate resolution performance is likely to be substantially poorer than the beam footprint and will be determined by one or more of several additional factors: (1) delocalization of the imaging signal, which consists of secondary electrons and/or backscattered electrons, due to the physics of the beam electron specimen interactions; (2) constraints imposed on the beam size needed to satisfy the Threshold Equation to establish the visibility for the contrast produced by the features of interest; (3) mechanical stability of the SEM; (4) mechanical stability of the specimen mounting; (5) the vacuum environment and specimen cleanliness necessary to avoid contamination of the specimen; (6) degradation of the specimen due to radiation damage; and (7) stray electromagnetic fields in the SEM environment. Recognizing these factors and minimizing or eliminating their impact is critical to achieving optimum high resolution imaging performance. Because achieving satisfactory high resolution SEM often involves operating at the performance limit of the instrument as well as the technique, the experience may vary from one specimen type to another, with different limiting factors manifesting themselves in different situations. Most importantly, because of the limitations on feature visibility imposed by the Threshold Current/Contrast Equation, for a given choice of operating conditions, there will always be a level of feature contrast below which specimen features will not be visible. Thus, there is always a possible “now you see it, now you don’t” experience lurking when we seek to operate at the limit of the SEM performance envelope.

As illustrated in Fig. 16.1, the physical basis of energy dispersive X-ray spectrometry (EDS) with a semiconductor detector begins with photoelectric absorption of an X-ray photon in the active volume of the semiconductor (Si). The entire energy of the photon is transferred to a bound inner shell atomic electron, which is ejected with kinetic energy equal to the photon energy minus the shell ionization energy (binding energy), 1.838 keV for the Si K-shell and 0.098 keV for the Si L-shell. The ejected photoelectron undergoes inelastic scattering within the Si crystal. One of the consequences of the energy loss is the promotion of bound outer shell valence electrons to the conduction band of the semiconductor, leaving behind positively charged “holes” in the valence band. In the conduction band, the free electrons can move in response to a potential applied between the entrance surface electrode and the back surface electrode across the thickness of the Si crystal, while the positive holes in the conduction band drift in the opposite direction, resulting in the collection of electrons at the anode on the back surface of the EDS detector. This charge generation process requires approximately 3.6 eV per electron hole pair, so that the number of charge carriers is proportional to the original photon energy, Ep: $$ n={E}_p/3.6\ eV $$ For a Mn K-L3 photon with an energy of 5.895 keV, approximately 1638 electron–hole pairs are created, comprising a charge of 2.6 × 10−16 coulombs. Because the detector can respond to any photon energy from a threshold of approximately 50 eV to 30 keV or more, the process has been named “energy dispersive,” although in the spectrometry sense there is no actual dispersion such as occurs in a diffraction element spectrometer.

«Trace analysis” refers to the measurement of constituents presents at low fractional levels. For SEM/EDS the following arbitrary but practical definitions have been chosen to designate various constituent classes according to these mass concentration (C) ranges

Before attempting automatic or manual peak identification, it is critical that the EDS system be properly calibrated to ensure that accurate energy values are measured for the characteristic X-ray peaks. Follow the vendor’s recommended procedure to rigorously establish the calibration. The calibration procedure typically involves measuring a known material such as copper that provides characteristic X-ray peaks at low photon energy (e.g., Cu L3-M5 at 0.928 keV) and at high photon energy (Cu K-L3 at 8.040 keV). Alternatively, a composite aluminum-copper target (e.g., a copper penny partially wrapped in aluminum foil and continuously scanned so as to excite both Al and Cu) can be used to provide the Al K-L3 (1.487 keV) as the low energy peak and Cu K-L3 for the high energy peak. After calibration, peaks occurring within this energy range (e.g., Ti K-L3 at 4.508 keV and Fe K-L3 at 6.400 keV) should be measured to confirm linearity. A well-calibrated EDS should produce measured photon energies within ±2.5 eV of the ideal value. Low photon energy peaks below 1 keV photon energy should also be measured, for example, O K (e.g., from MgO) and C K. For some EDS systems, non-linearity may be encountered in the low photon energy range. Figure 18.1 shows an EDS spectrum for CaCO3 in which the O K peak at 0.523 keV is found at the correct energy, but the C K peak at 0.282 keV shows a significant deviation below the correct energy due to non-linear response in this range.

The conventional SEM must operate with a pressure in the sample chamber below ~10−4 Pa (~10−6 torr), a condition determined by the need to satisfy four key instrumental operating conditions

Background: As part of a study into the in-service failure of the bearing surface of a large water pump, characterization was requested of the hard-facing alloy, which was observed to have separated from the stainless steel substrate, causing the failure.

Electron beams have made possible the development of the versatile, high performance electron microscopes described in the earlier chapters of this book. Techniques for the generation and application of electron beams are now well documented and understood, and a wide variety of images and data can be produced using readily available instruments. While the scanning electron microscope (SEM) is the most widely used tool for high performance imaging and microanalysis, it is not the only option and may not even always be the best instrument to choose to solve a particular problem. In this chapter we will discuss how, by replacing the beam of electrons with a beam of ions, it is possible to produce a high performance microscope which resembles an SEM in many respects and shares some of its capabilities but which also offers additional and important modes of operation.

By selecting the operating parameters of the SEM electron gun, lenses, and apertures, the microscopist controls the characteristics of the focused beam that reaches the specimen surface: energy (typically selected in the range 0.1–30 keV), diameter (0.5 nm to 1 μm or larger), beam current (1 pA to 1 μA), and convergence angle (semi-cone angle 0.001–0.05 rad). In a conventional high vacuum SEM (typically with the column and specimen chamber pressures reduced below 10−3 Pa), the residual atom density is so low that the beam electrons are statistically unlikely to encounter any atoms of the residual gas along the flight path from the electron source to the specimen, a distance of approximately 25 cm.

While amorphous substances such as glass are encountered both in natural and artificial materials, most inorganic materials are found to be crystalline on some scale, ranging from sub-nanometer to centimeter or larger. A crystal consists of a regular arrangement of atoms, the so-called «unit cell,» which is repeated in a two- or three-dimensional pattern. In the previous discussion of electron beam–specimen interactions, the crystal structure of the target was not considered as a variable in the electron range equation or in the Monte Carlo electron trajectory simulation. To a first order, the crystal structure does not have a strong effect on the electron–specimen interactions. However, through the phenomenon of channeling of charged particles through the crystal lattice, crystal orientation can cause small perturbations in the total electron backscattering coefficient that can be utilized to image crystallographic microstructure through the mechanism designated «electron channeling contrast,» also referred to as «orientation contrast» (Newbury et al. 1986). The characteristics of a crystal (e.g., interplanar angles and spacings) and its relative orientation can be determined through diffraction of the high-energy backscattered electrons (BSE) to form «electron backscatter diffraction patterns (EBSD).

The use of focused ion beams (FIB) in the field of electron microscopy for the preparation of site specific samples and for imaging has become very common. Site specific sample preparation of cross-section samples is probably the most common use of the focused ion beam tools, although there are uses for imaging with secondary electrons produced by the ion beam. These tools are generally referred to as FIB tools, but this name covers a large range of actual tools. There are single beam FIB tools which consist of the FIB column on a chamber and also the FIB/SEM platforms that include both a FIB column for sample preparation and an SEM column for observing the sample during preparation and for analyzing the sample post-preparation using all of the imaging modalities and analytical tools available on a standard SEM column. A vast majority of the FIB tools presently in use are equipped with liquid metal ion sources (LMIS) and the most common ion species used is Ga. Recent developments have produced plasma sources for high current ion beams. The gas field ion source (GFIS) is discussed in module 31 on helium ion microscopy in this book.

This module discusses the procedure used to perform a rigorous quantitative elemental microanalysis by SEM/EDS following the k-ratio/matrix correction protocol using the NIST DTSA-II software engine for bulk specimens. Bulk specimens have dimensions that are sufficiently large to contain the full range of the direct electron-excited X-ray production (typically 0.5–10 μm) as well as the range of secondary X-ray fluorescence induced by the propagation of the characteristic and continuum X-rays (typically 10–100 μm).

A conducting or semiconducting specimen must maintain good contact with electrical ground to dissipate the injected beam current. Without such an electrical path, even a highly conducting specimen such as a metal will show charging artifacts, in the extreme case acting as an electron mirror and reflecting the beam off the specimen. A typical strategy is to use an adhesive such as double-sided conducting tape to both grip the specimen to a support, for example, a stub or a planchet, as well as to make the necessary electrical path connection. Note that some adhesives may only be suitable for low magnification (scanned field dimensions greater than 100 × 100 μm, nominally less than 1,000× magnification) and intermediate magnification (scanned field dimensions between 100 μm x 100 μm, nominally less than 1,000X magnification and 10 μm × 10 μm, nominally less than 10,000× magnification) due to dimensional changes which may occur as the adhesive outgases in the SEM leading to image instability such as drift. Good practice is to adequately outgas the mounted specimen in the SEM airlock or a separate vacuum system to minimize contamination in the SEM as well as to minimize further dimensional shrinkage. Note that some adhesive media are also subject to dimensional change due to electron radiation damage during imaging, which can also lead to image drift.

There are two “zero-th level” assumptions that underpin the basis for quantitative electron-excited X-ray microanalysis

While X-ray analysis can be performed in the Variable Pressure Scanning Electron Microscope (VPSEM), it is not possible to perform uncompromised electron-excited X-ray microanalysis. The measured EDS spectrum is inevitably degraded by the effects of electron scattering with the atoms of the environmental gas in the specimen chamber before the beam reaches the specimen. The spectrum is always a composite of X-rays generated by the unscattered electrons that remain in the focused beam and strike the intended target mixed with X-rays generated by the gas-scattered electrons that land elsewhere, micrometers to millimeters from the microscopic target of interest.

The nanoscale structure of the ionomer film located in the catalyst layer of polymer exchange membrane fuel cells (PEMFCs) is of vital importance to proton transport and catalyst utilization. Classical molecular dynamic simulations are conducted to explore the molecular-level structure as well as the structure–property relationships in the ionomer film. Twenty-four systems are simulated to investigate the effect of (i) hydration, (ii) ionomer film thickness, (iii) oxidation of the carbon support surface, and (iv) the presence of catalyst nanoparticles on film adhesion and morphology. The ionomer does not form a continuous film on the carbon surface; rather, the ionomer forms irregular patches through which proton transport from the catalyst to the membrane must occur. These ionomer films are not able to retain water to the same extent as bulk ionomer membranes. However, thicker films retain proportionally more water than thinner films, allowing for a larger and better connected aqueous domain required for...

Carbon supported platinum (Pt/C) catalyst remains among the most preferable catalyst materials for Proton Exchange Membrane (PEM) fuel cells. However, platinum (Pt) particles suffer from poor durability and encounter electrochemical surface area (ESA) loss under operation with the accompany of Pt nanoparticle coarsening. Several proposed mechanisms have involved the Pt detachment from its carbonate support as an initial step for the deactivation of Pt nanoparticles. In this study, we investigated the detachment mechanism from the nano-adhesion point of view. Classic molecular dynamics simulations are performed on systems contain Pt nanoparticles of different sizes and shapes. A thin Nafion film (1 nm) at different hydration levels is also included in the system to study the environmental effect on nanoparticle adhesion. We found that the adhesion force strengthens as the Pt size goes up. Pt nanoparticles of tetrahedral shape exhibit relatively stronger connection with the carbon substrate due to its unique ‘anchor-like’ structure. Adhesion is enhanced with the introduction of a Nafion. The humidity level in the Nafion film has a rather complicated effect on the strength of nanoparticle adhesion. The binding energies and maximum adhesive forces are reported for all systems studied.

Development of devices and structures based on the layered 2D materials critically hinges on the capability to induce, control and tailor the electronic, transport and optoelectronic properties via defect engineering, much like doping strategies have enabled semiconductor electronics and forging enabled introduction the of iron age. Here, we demonstrate the use of a scanning helium ion microscope (HIM) for tailoring the functionality of single layer MoSe2 locally and decipher associated mechanisms at the atomic level. We demonstrate He+ beam bombardment that locally creates vacancies, shifts the Fermi energy landscape and increases the Young’s modulus of elasticity. Furthermore, we observe for the first time, an increase in the B-exciton photoluminescence signal from the nanoforged regions at the room temperature. The approach for precise defect engineering demonstrated here opens opportunities for creating functional 2D optoelectronic devices with a wide range of customizable properties that include operating in the visible region.

Over the past fifty years the scanning electron microscope (SEM) has established itself as the most versatile and productive tool for imaging and microanalysis in many areas of science and technology, and some seventy-thousand instruments generate millions of micrographs every day. Scanning electron microscopes do, however, have one fundamental limitation in that the only experimental variable available to the operator is the choice of the accelerating voltage. Although the ability to vary beam energy is both necessary and important, it is an unfortunate fact that changing the beam energy also alters many aspects of performance: imaging resolution, relative strength of different signal components, depth of beam penetration, capabilities of the various analytical systems, and the severity of charging and beam-induced damage. This makes it difficult or impossible to optimize the interaction of interest.

Summary Generally, in scanning electron microscopy (SEM) imaging, it is desirable that a high-resolution image be composed mainly of those secondary electrons (SEs) generated by the primary electron beam, denoted SEI. However, in conventional SEM imaging, other, often unwanted, signal components consisting of backscattered electrons (BSEs), and their associated SEs, denoted SEII, are present; these signal components contribute a random background signal that degrades contrast, and therefore signal-to-noise ratio and resolution. Ideally, the highest resolution SEM image would consist only of the SEI component. In SEMs that use conventional pinhole lenses and their associated Everhart–Thornley detectors, the image is composed of several components, including SEI, SEII, and some BSE, depending on the geometry of the detector. Modern snorkel lens systems eliminate the BSEs, but not the SEIIs. We present a microfabricated diaphragm for minimizing the unwanted SEII signal components. We present evidence of improved imaging using a microlithographically generated pattern of Au, about 500 nm thick, that blocks most of the undesired signal components, leaving an image composed mostly of SEIs. We refer to this structure as a “spatial backscatter diaphragm.” SCANNING 35:1-6, 2013. © 2012 Wiley Periodicals, Inc.

The scanning electron microscope (SEM) has become the most widely used of all advanced imaging tools because it offers a unique range of capabilities. It can resolve and image objects with sizes ranging from millimeters to below 1 nm; it offers multiple ways to generate, collect, and display signals; the images produced contain information about the topography, chemical composition, and the magnetic, electrostatic, and crystallographic properties of the sample; and it can generate characteristic x-ray emission from the specimen to provide a quantitative chemical analysis. Unfortunately, one thing that it will be unable to do is maintain its competitive edge in the 21st century. This is because electrons are electromagnetic ‘‘waves’’ and thus the smallest spot, ‘‘d,’’ into which an electron beam can be focused has a diameter of the order of: d 1⁄4 k=a ð1Þ

Nanocrystallites have garnered substantial interest due to their various applications, including catalysis and medical research. Consequently important aspects of synthesis related to control of shape and size through economical and non-hazardous means are desirable. Highly efficient bioreduction-based fabrication approaches that utilize microbes and/or plant extracts are poised to meet these needs. Here we show that the γ -proteobacterium Shewanella oneidensis can reduce tetrachloroaurate (III) ions to produce discrete extracellular spherical gold nanocrystallites. The particles were homogeneously shaped with multiple size distributions and produced under ambient conditions at high yield, 88% theoretical maximum. Further characterization revealed that the particles consist of spheres in the size range of ∼2–50 nm, with an average size of 12 ± 5 nm. The nanoparticles were hydrophilic and resisted aggregation even after several months. Based on our experiments, the particles are likely fabricated by the aid of reducing agents present in the bacterial cell membrane and are capped by a detachable protein/peptide coat. Ultraviolet–visible and Fourier transform infrared spectroscopy, X-ray diffraction, energy dispersive X-ray spectra and transmission electron microscopy measurements confirmed the formation, surface characteristics and crystalline nature of the nanoparticles. The antibacterial activity of these gold nanoparticles was assessed using Gram-negative ( Escherichia coli and S. oneidensis ) and Gram-positive ( Bacillus subtilis ) bacterial species. Toxicity assessments showed that the particles were neither toxic nor inhibitory to any of these bacteria.

The scanning helium ion microscope has been used in transmission mode to investigate both the feasibility of this approach and the utility of the signal content and the image information available. Operating at 40 keV the penetration of the ion beam, and the imaging resolution achieved, in MgO crystals was found to be in good agreement with values predicted by Monte Carlo modeling. The bright-field and annular dark-field signals displayed the anticipated contrasts associated with beam absorption and scattering. In addition, the diffraction of the He ion beam within the sample gave rise to crystallographic contrast effects in the form of thickness fringes and dislocation images. Scanning transmission He ion microscopy thus achieves useful sample penetration and provides nanometer scale resolution, high contrast images of crystalline materials and crystal defects even at modest beam energies.

In many applications such as optoelectronic devices, three-dimensional (3D) structures are required. Examples include photonic band gap (PBG) crystals, diffractive optical elements, blazed gratings, MEMS, NEMS, etc. It is known that the performance characteristics of such structures are highly sensitive to their dimensional fidelity. Therefore, it is essential to have a fabrication process by which such 3D structures can be realized with high dimensional accuracy. In this paper, practical methods to control thickness of the remaining resist and etch depth, which may be employed for fabrication of such 3D structures using grayscale electron-beam lithography, are described. Through experiments, explicit control of the remaining resist thickness and etch depth at the resolution of 20nm for the feature sizes of 0.5@mm and 1@mm has been successfully demonstrated. Also, the 1:1 ratio of silicon to resist etching rates was achieved for transferring the remaining resist profile onto the silicon substrate.

The phase-contrast imaging of atomic lattices has now become commonplace for both Transmission Electron Microscopes (TEM) and Scanning Transmission Electron Microscopes (STEMs). Recently, however, bright-field STEM images of multi-wall carbon nanotubes (MWCNTs) recorded from an ultra-high resolution (UHR) in-lens field-emission scanning electron microscope (FE-SEM) operating at 30keV have also demonstrated lattice fringe resolution. One example of such an image containing multiple examples of fringe detail is shown in figure 1. The carbon lattice fringes were analyzed and their origin confirmed by the application of the FFT algorithms in the SMART image analysis program. The resulting power spectrum after thresholding to remove background noise (Figure 2) confirms that phase detail in the image extends down to about 5 Angstroms (0.5nm) and that well defined diffraction spots corresponding to a spacing of 3.4 Angstroms (0.34nm) generated by the (002) basal plane spacing of the graphite lattice are present.

The remarkable mechanical and electronic properties of graphene make it an ideal candidate for next generation nanoelectronics. With the recent development of commercial-level single-crystal graphene layers, the potential for manufacturing household graphene-based devices has improved, but significant challenges still remain with regards to patterning the graphene into devices. In the case of graphene supported on a substrate, traditional nanofabrication techniques such as e-beam lithography (EBL) are often used in fabricating graphene nanoribbons but the multi-step processes they require can result in contamination of the graphene with resists and solvents. In this letter, we report the utility of scanning helium ion lithography for fabricating functional graphene nanoconductors that are supported directly on a silicon dioxide layer and we measure the minimum feature size achievable due to limitations imposed by thermal fluctuations and ion scattering during the milling process. Further we demonstrate that ion beams, due to their positive charging nature, may be used to observe and test the conductivity of graphene-based nanoelectronic devices in situ.

A field-emission scanning electron microscope (FESEM) equipped with the standard secondary electron (SE) detector was used to image thin (70-90 nm) and thick (1-3 microns) sections of biological materials that were chemically fixed, dehydrated, and embedded in resin. The preparation procedures, as well as subsequent staining of the sections, were identical to those commonly used to prepare thin sections of biological material for observation with the transmission electron microscope (TEM). The results suggested that the heavy metals, namely, osmium, uranium, and lead, that were used for postfixation and staining of the tissue provided an adequate SE signal that enabled imaging of the cells and organelles present in the sections. The FESEM was also used to image sections of tissues that were selectively stained using cytochemical and immunocytochemical techniques. Furthermore, thick sections could also be imaged in the SE mode. Stereo pairs of thick sections were easily recorded and provided images that approached those normally associated with high-voltage TEM.

Experimental nanotips have shown significant improvement in the resolution performance of a cold field emission scanning electron microscope (SEM). Nanotip electron sources are very sharp electron emitter tips used as a replacement for the conventional tungsten field emission (FE) electron sources. Nanotips offer higher brightness and smaller electron source size. An electron microscope equipped with a nanotip electron gun can provide images with higher spatial resolution and with better signal-to-noise ratio. This could present a considerable advantage over the current SEM electron gun technology if the tips are sufficiently long-lasting and stable for practical use. In this study, an older field-emission critical dimension (CD) SEM was used as an experimental test platform. Substitution of tungsten nanotips for the regular cathodes required modification of the electron gun circuitry and preparation of nanotips that properly fit the electron gun assembly. In addition, this work contains the results of the modeling and theoretical calculation of the electron gun performance for regular and nanotips, the preparation of the SEM including the design and assembly of a measuring system for essential instrument parameters, design and modification of the electron gun control electronics, development of a procedure for tip exchange, and tests of regular emitter, sharp emitter and nanotips. Nanotip fabrication and characterization procedures were also developed. Using a "sharp" tip as an intermediate to the nanotip clearly demonstrated an improvement in the performance of the test SEM. This and the results of the theoretical assessment gave support for the installation of the nanotips as the next step and pointed to potentially even better performance. Images taken with experimental nanotips showed a minimum two-fold improvement in resolution performance than the specification of the test SEM. The stability of the nanotip electron gun was excellent; the tip stayed useful for high-resolution imaging for several hours during many days of tests. The tip lifetime was found to be several months in light use. This paper summarizes the current state of the work and points to future possibilities that will open when electron guns can be designed to take full advantage of the nanotip electron emitters.

Charging is one of the most important problems encountered in scanning electron microscopy and as a result this phenomenon it has received a lot of both theoretical and experimental attention. Despite this, many questions remain about the nature and behavior of charging because of the limitations of the experimental techniques available to study it. For example, although it is now straightforward to determine in situ the surface potential of a sample that is charging during irradiation, it is difficult to measure the lateral extent of the charging, or its persistence once the incident beam is switched off. We describe here a simple technique which provides a rapid way of visualizing the temporal and spatial behavior of charging phenomena.

We briefly discuss how to set-up our Hitachi HF-2000 transmission electron microscope for medium magnification holography. Then we apply this technique to examine the activation of an as-doped wafer by annealing. We also present voltage profiles of the source-drain region of a CMOS transistor with 75 nm gate architecture taken from an off-the-shelf Intel PIII processor. Special attention is given to the analysis of the reconstructed holograms. [DOI: 10.1380/ejssnt.2004.119]

Serial block face scanning electron microscopy (SBF-SEM) provides nanoscale 3D ultrastructure of entire cells and tissue volumes. In SBF-SEM, an ultramicrotome built into the SEM specimen stage successively removes thin sections from a plastic-embedded, heavy metal-stained specimen. After each cut, the freshly exposed block face is imaged at a low incident electron energy using a backscattered electron detector to provide 3D ultrastructure with a resolution of approximately 5 nm in the plane of the block face and around 25 nm in the perpendicular z-direction, as limited by the slice thickness. We have explored the feasibility of improving the z-resolution in SBF-SEM by recording images at multiple primary beam energies, thus sampling different depths below the block surface.A linear relationship was found between the depth of test structures, generated by Monte Carlo simulations, and the ratio of backscattered image intensities recorded at primary beam energies between 1.4 keV and 6.8 keV. This enabled us to reconstruct the 3D model within a 25-nm surface layer at a z-resolution of around 5 nm. We used a Zeiss Sigma-VP SEM equipped with a Gatan 3View SBF system to acquire 3D data from a specimen consisting of gold spheres embedded in carbon. Experiments were also performed on embedded blocks of stained biological tissues.Although damage of the block under electron irradiation limits the signal to noise ratio, the use of multiple primary beam energies, coupled with a physics-based Monte Carlo model, provides the possibility of obtaining cellular ultrastructure at nearly isotropic 3D spatial resolution.

We describe a novel, all dry approach that uses direct epitaxial growth for nanostructure fabrication. The two major requirements for achieving direct epitaxial growth are the ability to generate and to subsequently maintain and control spatial and chemical selectivity in the film growth process. The spatial selectivity is generated by pattering a surface adsorption layer on Si(100) using scanning electron beam lithography. This artificial lateral variation in surface reactivity is used as a template in subsequent epitaxy. Selective epitaxial growth on the resulting patterns is achieved by supersonic molecular jet epitaxy. Systematic investigation of the effects of various patterning and growth parameters on spatial and chemical selectivity at a sub- 100-nm feature scale using hydrogen terminated and nitrogen terminated growing Si(100) surfaces are presented.

Based on the one-band tight-binding model, we systematically investigate the interlayer exchange coupling and the angular dependence of the coupling energy in a magnetic sandwich covered on both sides by nonmagnetic films. Our results show that (i) the thickness of magnetic and outer nonmagnetic films influence significantly the oscillatory behavior of exchange coupling, (ii) the appearance of noncollinear exchange coupling is very sensitive to the thickness of magnetic and outer nonmagnetic layers, (iii) the nonoscillatory component of the coupling varies generally with the thickness of magnetic or outer nonmagnetic films, and (iv) the results in the case where the thickness of both magnetic or both outer nonmagnetic films vary simultaneously are significantly different from that in the case where the thickness of one of the two magnetic or outer nonmagnetic films is fixed while the other is varied. These results are qualitatively in agreement with the experimental measurements. (C) 1998 American Institute of Physics. [S0021-8979(98)02302-0].

Current materials are usually complex in chemistry, three-dimensional in form, and of rapidly diminishing microstructural scale. To characterize such materials the scanning electron microscope (SEM) now uses a wide range of operating conditions to target the desired sample volume, sophisticated modeling techniques to interpret the data. It also uses novel imaging modes to derive new types of information. These include depth-resolved three-dimensional data, and spatially resolved crystallographic data.