Search

A rare-earth-containing compound, ytterbium aluminium antimonide, Yb3AlSb3(Ca3AlAs3-type structure), has been successfully synthesized within the Yb–Al–Sb system through flux methods. According to the Zintl formalism, this structure is nominally made up of (Yb2+)3[(Al1−)(1b– Sb2−)2(2b– Sb1−)], where1band2bindicate 1-bonded and 2-bonded, respectively, and Al is treated as part of the covalent anionic network. The crystal structure features infinite corner-sharing AlSb4tetrahedra, [AlSb2Sb2/2]6−, with Yb2+cations residing between the tetrahedra to provide charge balance. Herein, the synthetic conditions, the crystal structure determined from single-crystal X-ray diffraction data, and electronic structure calculations are reported.

The rapid rise of atmospheric CO2 has spurred keen research interest in sustainable energy technologies including thermoelectric materials which can reliably and robustly turn heat directly to elec...

Here we report the synthesis and characterization of three quaternary complex chalcogenides, Ag0.72Bi5.48Cu0.88S9 (I), Ag0.70Bi5.30Cu1.3S9 (II), Ag0.34Bi4.54Cu1.98PbS9 (III). All the compounds in this homologous series crystallize in the C2/m space group and can be described as Pavonite structures. This structure type consists of alternating NaCl-like layers with varied thickness (nP), separated by a pair of square pyramids. All the compounds reported here are synthetic analogues of the n = 4 pavonite family and are known as makovickyite minerals. Compounds I–III possess complex crystal structures, consisting of mixed occupancies of Bi/Ag/Pb sites, as well as partially occupied Cu sites. These intrinsic assets lead to ultra-low lattice thermal conductivities, in the range of 0.75–0.42 Wm−1 K−1 from 300–500 K, and make these materials promising candidates for thermoelectric applications. All three structures exhibit very narrow indirect band gaps of less than 0.5 eV as confirmed by DRS measurements. Charge transport properties are consistent with n-type semiconducting behavior with moderate electrical conductivities and large Seebeck coefficients. Low temperature electrical resistivity and Seebeck coefficient measurements are also performed on II. A promising figure of merit, zT, of 0.09 for I and II, 0.11 for III can be achieved at 475 K.

Yb14MnSb11 is a p-type high-temperature thermoelectric material with operational temperatures as high as 1273 K. Rare-earth (RE) substitution into this phase has been shown to increase the melting ...

Composite phases have been shown to improve both the thermoelectric efficiency and mechanical properties of materials. Here, we demonstrate an improved thermoelectric figure of merit, power factor,...

Thermoelectric materials are a unique class of compounds that can recycle energy through conversion of heat into electrical energy. A new 21–4–18 Zintl phase has been discovered in the Yb–Mn–Sb sys...

The reduction of Ge halides in oleylamine (OAm) provides a simple, yet effective high-yield synthetic route to germanium nanocrystals (NCs). Significant advances based on this approach include size...

Topological insulators (TIs) are a class of materials that can exhibit robust spin polarizations at the surfaces and have attracted much attention toward spintronic applications. Here, we optimized...

Yb14MnSb11 is a member of a remarkable structural family of compounds that are classified according to the concept of Zintl. This structure type, of which the prototype is Ca14AlSb11, provides a flexible framework for tuning structure-property relationships and hence the physical and chemical properties of compounds. Compounds within this family show exceptional high temperature thermoelectric performance at temperatures above 300 K and unique magnetic and transport behavior at temperatures below 300 K. This review provides an overview of the structure variants, the magnetic properties, and the thermoelectric properties. Suggestions for directions of future research are provided.

BaFe2As2 superconductors doped with Co or Ni were synthesized by heat treatment of the reactive BaH2 precursor and elemental Fe, Co, Ni, and As in a sealed niobium container. The hydride route prov...

We report the synthesis, structure, and magnetic properties of a new Zintl phase and structure type, Eu11Zn4Sn2As12. The structure and composition of this phase have been established by single-crystal X-ray diffraction and electron microprobe analysis. Eu11Zn4Sn2As12 crystallizes in monoclinic space group C2/c (No. 15) with the following lattice parameters: a = 7.5679(4) A, b = 13.0883(6) A, c = 31.305(2) A, and β = 94.8444(7)° [R1 = 0.0398; wR2 = 0.0633 (all data)]. The anisotropic structural features staggered ethane-like [Sn2As6]12– units and infinite ∞2[Zn2As3]5– sheets extended in the a–b plane. Eu cations fill the space between these anionic motifs. Temperature-dependent magnetic properties and magnetoresistance of this Zintl phase have been studied, and the electronic structure and chemical bonding were elucidated using first-principles quantum chemical calculations (TB-LMTO-ASA). Quantum chemical calculations show that the ethane-like units can be considered as consisting of covalent single bonds;...

Polycrystalline samples of CoAsSb were prepared by annealing a stoichiometric mixture of the elements at 1073 K for 2 weeks. Synchrotron powder X-ray diffraction refinement indicated that CoAsSb adopts arsenopyrite-type structure with space group P21/c. Sb vacancies were observed by both elemental and structural analysis, which indicate CoAsSb0.883 composition. CoAsSb was thermally stable up to 1073 K without structure change but decomposed at 1168 K. Thermoelectric properties were measured from 300 to 1000 K on a dense pellet. Electrical resistivity measurements revealed that CoAsSb is a narrow-band-gap semiconductor. The negative Seebeck coefficient indicated that CoAsSb is an n-type semiconductor, with the maximum value of −132 μV/K at 450 K. The overall thermal conductivity is between 2.9 and 6.0 W/(m K) in the temperature range 300–1000 K, and the maximum value of figure of merit, zT, reaches 0.13 at 750 K. First-principles calculations of the electrical resistivity and Seebeck coefficient confirmed ...

Since the report of high zT in Si95Ge5 there has been significant interest in low Ge alloy compositions for thermoelectric applications. The application of YbP was explored as a means to lower thermal conductivity. A series of 3% phosphorus (P) doped n-type Si95Ge5 (SiGe) alloy was reacted with YbH2 (0, 1, 2%). YbP was formed in the SiGe alloy matrix from the reaction between YbH2 and P during the Spark Plasma Sintering (SPS) process. Thermoelectric property measurements were performed on sintered pellets from room temperature to 1273 K. X-ray diffraction patterns were collected from the ground powder samples and confirmed the main phase possessed diamond structured Si95Ge5 (space group: Fd 3 ¯ m) as well as the presence of YbP (space group: Fm 3 ¯ m). The carrier concentration of the sample was controlled by the amount of YbH2 added, removing some of the phosphorus to form YbP. n-type Si95Ge5 alloy samples with higher YbP amounts showed higher electrical resistivity and lower thermal conductivity attributed to loss of the P dopant. Another composite series of n-type Si95Ge5 with YbP were synthesized with additional P compositions (1, 2%). The thermoelectric properties were characterized from room temperature to 1273 K, and the samples possess electrical resistivity, carrier concentrations, and thermal conductivity as expected from the additional P dopant. The presence of YbP lowered lattice thermal conductivity when the sample was appropriately doped. The Seebeck coefficients were measured with both off-axis and uniaxial axis experimental configurations. These results show that the off-axis measurements overestimate the Seebeck coefficients of the Si95Ge5 alloy samples. This is attributed to a cold finger effect and therefore only the uniaxial data are combined for zT calculations. The n-type Si95Ge5 samples with YbP and less than 3% P dopant show similar zT compared with the Si95Ge5 sample with no YbP inclusions and 3% P dopant with a peak zT of 0.6 at 1200 K.

Large crystals of Yb14MgSb11 were grown through a Sn flux method. Magnetic susceptibility measurements yield an effective magnetic moment of 3.4(1) μB, revealing the presence of both divalent and trivalent Yb in Yb14MgSb11. Previously assumed to only contain Yb2+ as in Yb14MnSb11, the mixed valency demonstrates that Yb14MgSb11 is a Zintl phase.

Zintl phases are promising thermoelectric materials because they are composed of both ionic and covalent bonding, which can be independently tuned. An efficient thermoelectric material would have regions of the structure composed of a high-mobility compound semiconductor that provides the “electron–crystal” electronic structure, interwoven (on the atomic scale) with a phonon transport inhibiting structure to act as the “phonon–glass”. The phonon–glass region would benefit from disorder and therefore would be ideal to house dopants without disrupting the electron–crystal region. The solid solution of the Zintl phase, Yb2–xEuxCdSb2, presents such an optimal structure, and here we characterize its thermoelectric properties above room temperature. Thermoelectric property measurements from 348 to 523 K show high Seebeck values (maximum of ∼269 μV/K at 523 K) with exceptionally low thermal conductivity (minimum ∼0.26 W/m K at 473 K) measured via laser flash analysis. Speed of sound data provide additional suppo...

Nanogermanium is a material that has great potential for technological applications, and doped and alloyed Ge nanocrystals (NCs) are actively being considered. New alloys and compositions are possible in colloidal synthesis because the reactions are kinetically rather than thermodynamically controlled. Most of the Group V elements have been shown to be n-type dopants in Ge to increase carrier concentration; however, thermodynamically, Bi shows no solubility in crystalline Ge. Bi-doped Ge NCs were synthesized for the first time in a microwave-assisted solution route. The oleylamine capping ligand can be replaced by dodecanethiol without loss of Bi. A positive correlation between the lattice parameter and the concentration of Bi content (0.5–2.0 mol %) is shown via powder X-ray diffraction and selected area electron diffraction. X-ray photoelectron spectroscopy, transmission electron microscopy (TEM), scanning TEM, and inductively coupled plasma–mass spectroscopy are consistent with the Bi solubility up to ...

Within the field of thermoelectric materials for energy conversion magnesium silicide, Mg2Si, is an outstanding candidate due to its low density, abundant constituents and low toxicity. However electronic and thermal tuning of the material is a required necessity to improve its Figure of Merit, zT. Doping of Yb via reactive YbH2 into the structure is performed with the goal of reducing the thermal conductivity. Hydrogen is released as a by-product at high temperatures allowing for facile incorporation of Yb into the structure. We report on the properties of Yb- and Bi-doped Mg2Si prepared with MgH2 and YbH2 with the focus on the synthetic conditions, and samples’ microstructure, investigated by various electron microscopy techniques. Yb is found in the form of both Yb3Si5 inclusions and Yb dopant segregated at the grain boundary substituting for Mg. The addition of 1 at% Yb concentration reduced the thermal conductivity, providing a value of 30 mW/cm K at 800 K. In order to adjust carrier concentration, the sample is additionally doped with Bi. The impact of the microstructure on the transport properties of the obtained material is studied. Idealy, the reduction of the thermal conductivity is achieved by doping with Yb and the electronic transport is adjusted by doping with Bi. Large grain microstructure facilitates the electronic transport. However, the synthetic conditions that provide the optimized microstructure for electrical transport do not facilitate the additional Yb dopant incorporation. Therefore, the Yb and Bi containing sample with the optimized microstructure provides a zT=0.46 at 800 K.

Yb14MnSb11 is the most efficient bulk p-type thermoelectric material for high temperature applications. Materials with Y and Sc substitutions in Yb14MnSb11 were made both in Sn-flux and by ball milling. These small 3+ rare earth (RE) cations were introduced with the goal of providing chemical pressure on the structure. The RE3+ cation is smaller than Yb2+ and also donates one additional electron to this p-type semiconductor. In Yb14−xRExMnSb11 (RE = Sc, Y) the maximum x was about 0.5. X-ray diffraction experiments on the single crystals obtained from Sn-flux showed that Sc preferentially substitutes for Yb(1) and Yb(3), and decreases the size of the unit cell by about 0.3%. Y substitutes on all Yb sites and increases the size of the unit cell by about 0.2%. Samples with Yb14−xRExMnSb11 (x~0.3) were prepared via powder metallurgy and spark plasma sintering for transport and thermal conductivity measurements. Electron microprobe of the Sc-substituted sample showed small regions (≤1 μ m) containing greater amounts of Sc, and X-ray powder diffraction of the ball milled Sc sample could be fitted as phase pure Yb14−xScxMnSb11. Y-substituted samples showed larger regions of excess Y in electron microprobe, and small amounts of Yb4Sb3 in X-ray powder diffraction. The Sc sample has slightly reduced carrier concentration over optimized Yb14MnSb11, while the Y samples have even lower carrier concentrations. These carrier concentrations lead to comparable resistivity to Yb14MnSb11 in the Sc-substituted material, and higher resistivities in the Y-substituted material. All materials had similar Seebeck coefficients that slightly exceed Yb14MnSb11 at high temperatures, with the Sc-substituted sample having the highest despite having a higher carrier concentration. Sc-substituted samples also had a slightly higher thermal conductivity over the Y-substituted samples, which had comparable thermal conductivity to Yb14MnSb11. The zT values of the Sc and Y substituted samples are similar (zT1000 K~0.8), however below that of Yb14MnSb11 due to the compensation of Seebeck and resistivity.

Single crystals of Yb14−xRExMnSb11 (x~0.1, 0.4; RE = Tb, Dy, Ho) have been prepared as a solid solution by Sn flux reactions of the elements. They crystallize in the Ca14AlSb11 structure type in the I41/acd space group. The RE3+preferentially substitutes on the Yb(1) site which is the smallest volume Yb containing polyhedron. In the case of Ho3+, a small amount of Ho3+ also substitutes on the Yb(4) site. The ferromagnetic ordering temperature of Yb14MnSb11 is reduced from 53 K to 41 K as x increases and dependent on the identity of the RE. This is attributed to the reduction in carriers and reduced screening of the Mn2+ local moment. The effective moments, μeff, agree well with the calculated moments assuming the RE substitutes as a trivalent cation. The largest coercive field is observed for RE = Dy (1000 Oe). For the maximum x of Yb14−xRExMnSb11 there are enough carriers for the Ruderman-Kittel-Kasuya-Yosida (RKKY) mechanism of magnetic coupling via conduction electrons to still be valid in describing the ferromagnetic ordering.

The thermal stability and thermoelectric properties of type I clathrate K8Al8Si38 up to 873 K are reported. K8Al8Si38 possesses a high absolute Seebeck coefficient value and high electrical resistivity in the temperature range of 323 to 873 K, which is consistent with previously reported low temperature thermoelectric properties. Samples with Ba partial substitution at the K guest atom sites were synthesized from metal hydride precursors. The samples with the nominal chemical formula of K8–xBaxAl8+xSi38–x (x = 1, 1.5, 2) possess type I clathrate structure (cubic, Pm3n), confirmed by X-ray diffraction. The guest atom site occupancies and thermal motions were investigated with Rietveld refinement of synchrotron powder X-ray diffraction. Transport properties of Ba-containing samples were characterized from 2 to 300 K. The K–Ba alloy phases showed low thermal conductivity and improved electrical conductivity compared to K8Al8Si38. Electrical resistivity and Seebeck coefficients were measured over the tempera...

EuGa4 hosts a magnetic Eu2+ sublattice surrounded by a network of covalently-bound Ga atoms with the BaAl4 structure type (space group I4/ m m m ). In this study, we present the synthesis and characterization of three new single crystal substitutional series Eu A x 1 − x Ga4 with A ​= ​Ca, Sr, or La. X-ray diffraction and resistivity measurements show that Ca substitution induced a structural phase transition from the tetragonal crystal structure at high temperatures to the monoclinic crystal structure (CaGa4 type, space group C2/m) at low temperatures and suppressed the antiferromagnetic ordering temperature to 8.8 ​K for x ​= ​0.45. Comparatively, La or Sr substitution maintained the tetragonal crystal structure and suppressed the antiferromagnetic ordering temperatures to 6.7 ​K and 1.6 ​K for (A, x) = (La, 0.37) and (Sr, 0.91), respectively. In addition to suppressing the magnetic order, magnetization and specific heat measurements indicate the onset of anisotropic metamagnetic transitions in (La, 0.18), (La, 0.37), and (Sr, 0.63), along with an incommensurate-to-commensurate magnetic transition in (Sr, 0.38). By comparing these effects of doping EuGa4, we show how size, disorder, and charge determine the structure-physical property relations in EuGa4.

Two series of crystals were prepared via Sn flux synthesis with the compositional fluxes of Yb14−xLnxMnSb11, where x = 0.1–0.9 and x = 0.4. By X-ray structural measurements and microprobe analysis, the maximum amount of Ln incorporated in the unit cell matrix were determined to be 0.37 ± 0.04 for the La–Nd and 0.45 ± 0.04 for Sm–Tm elements with solid substitution solution formation. The Ln incorporation did not change the unit cell significantly but the cell volume decreased going from the largest La–Nd to the smallest Tm–Lu cations. The Ln0.30–0.40 samples demonstrated congruent melting and their melting points increased by ∼30–50 °C compared to the pristine matrix. The temperatures were attributed to the ordered structural state due to the Ln distribution in the unit cell only through the one regular system site. Based on geometrical fitting between crystal radii of Yb2+ and Ln3+ in six-coordination, the Yb(2) sites were found to be more preferable for substitution by La–Nd, Yb(1) by Sm–Ho and Yb(3) by Tm and Lu atoms. Thermal losses as a temperature function of the alloyed by La and Lu samples were determined by a step-by-step heating procedure with analysis of the vapor condensate deposited on the viewing window of the chamber. This experiment demonstrated a high mobility of the tetrahedral Mn and Sb along with Yb ions in the Yb14MnSb11 matrix with incongruent sublimation beyond 1300 °C and a decrease of the thermal weight losses by half if the matrix was alloyed by La. Occupation of the Yb sites by Ln atoms varied the geometry of the MnSb4 tetrahedron as well as electron properties and bonding in this structural fragment, and these changes are considered in the context of the coupling between chemical structure and thermal stability of the compounds. The improved thermal stability due to increasing the total ionic state of the alloyed samples was found to possibly be a useful factor for the long-time use of these materials for space applications.

The syntheses of YbTe1−x Sb x (x = 0, 0.05, 0.2, 0.5, 0.8, 1) were investigated by solid state reactions and formed into dense pellets by spark plasma sintering. X-ray powder diffraction and microprobe analysis indicated no solubility of Sb in YbTe, and these phases are better described as composite phases (YbTe)1−x (YbSb) x (x = 0, 0.05, 0.2, 0.5, 0.8, 1). Thermal conductivity, electrical resistivity, and Seebeck coefficients were acquired for the larger values of x (x = 0.2, 0.5, 0.8, 1) from room temperature to 773 K, and the figure of merit was calculated. Thermal conductivities for x = 0, 0.05 are also reported; however, measurements of Seebeck coefficients and electrical resistivity were not possible due to large resistivity. The figure of merit for all samples was low, and the maximum zT measured was zT 791K = 0.018 for YbSb. Low figures of merit were primarily the result of very high resistivity in YbTe rich samples, and high thermal conductivity, and a small Seebeck coefficient in all samples.

The synthesis and transport properties of the family of coinage metal-stuffed Zintl compounds, Eu9Cd4–xCM2+x–y□ySb9 (CM = coinage metal, □ = vacancies), is presented as a function of coinage metal substitution. Eu9Cd4–xCM2+x–y□ySb9 compounds are shown to be rare examples of metallic Zintl phases with low thermal conductivities. While the lattice thermal conductivity is low, which is attributed to the complex structure and presence of interstitials, the electronic contribution to thermal conductivity is also low. In these p-type compounds, the carriers transmit less heat than expected, based on the Wiedemann–Franz law and metallic conduction, κe = L0T/ρ. Density functional theory (DFT) calculations indicate that the Fermi level resides in a pseudo-gap, which is consistent with the metallic description of the properties. While the contribution from the interstitial CM states to the Fermi level is small, the interstitial CMs are required to tune the position of the Fermi level. Analysis of the topology of el...

Compounds of the Yb14MnSb11 structure type are the highest efficiency bulk p-type materials for high temperature thermoelectric applications, with reported figures of merit (ZTs) as high as ∼1.3 at 1275 K. Further optimization of ZT for this structure type is possible with the development of a simple synthetic route. However, this has been difficult to achieve because of the small amount of Mn required compared with Yb and Sb. A simple synthetic route for Yb14MnSb11 has been developed utilizing a combination of ball milling and annealing to produce phase-pure material followed by spark plasma sintering for consolidation. The materials have been characterized by powder X-ray diffraction before and after spark plasma sintering. The stoichiometric reaction of Yb, Sb, and MnSb provides phase-pure powder by X-ray diffraction. Upon cycling to temperatures greater than 1272 K, Yb14MnSb11 shows the presence of Yb11Sb10. Additional samples with 5% and 10% excess Mn were also investigated. Adding 5–10% excess Mn do...

Solid-solution Zintl compounds with the formula Eu11Cd6–xZnxSb12 have been synthesized from the elements as single crystals using a tin flux according to the stoichiometry Eu:Cd:Zn:Sb:Sn of 11:6–xp:xp:12:30 with xp = 0, 1, 2, 3, 4, 5, and 6, where xp is the preparative amount of Zn employed in the reaction. The crystal structures and the compositions were established by single-crystal as well as powder X-ray diffraction and wavelength-dispersive X-ray analysis measurements. The title solid-solution Zintl compounds crystallize isostructurally in the centrosymmetric monoclinic space group C 2/m (No. 12, Z = 2) as the Sr11Cd6Sb12 structure type (Pearson symbol mC58). There is a miscibility gap at 3 ≤ xp ≤ 4 where the major product crystallizes in a disordered structure related to the Ca9Mn4Bi9 structure type; otherwise, for all other compositions, the Sr11Cd6Sb12 structure is the majority phase. Eu11Cd6Sb12 shows lower lattice thermal conductivity relative to Eu11Zn6Sb12 consistent with its higher mean atomi...

A series of alkali metal containing compounds with type I clathrate structure, A8Ga8Si38 (A = K, Rb, Cs) and K8Al8Si38, were synthesized and characterized. Room temperature lattice parameters of A8Ga8Si38 (A = K, Rb, Cs) and K8Al8Si38 were determined to be 10.424916(10), 10.470174(13), 10.535069(15), and 10.48071(2) A, respectively. The type I clathrate structure (cubic, Pm3n) was confirmed for all phases, and in the case of K8Al8Si38 and K8Ga8Si38, the structures were also refined using synchrotron powder diffraction data. The samples were consolidated by Spark Plasma Sintering (SPS) for thermoelectric property characterization. Electrical resistivity was measured by four probe AC transport method in the temperature range of 30 to 300 K. Seebeck measurements from 2 to 300 K were consistent with K8Al8Si38 and K8Ga8Si38 being n-type semiconductors, while Rb8Ga8Si38 and Cs8Ga8Si38 were p-type semiconductors. K8Al8Si38 shows the lowest electrical resistivity and the highest Seebeck coefficient. This phase a...

Bulk nanocrystalline Mg2Si thermoelectric materials were synthesized and consolidated in a one-step process through a solid-state reaction between magnesium hydride and silicon, using the spark plasma sintering (SPS) method. The hydrogen produced in the process alleviates the problem of the oxidation of Mg. The samples were reactively sintered at temperatures in the range 723–823 K and under a uniaxial pressure in the range of 71–164 MPa in 5 min. Powder X-ray diffraction (XRD) analysis showed the products to be pure Mg2Si. The grain size of the consolidated samples was less than 500 nm, as determined by transmission electron spectroscopy (TEM). Residual nano-pores were observed by scanning electron microscopy at grain boundaries; their presence is believed to be the consequence of hydrogen evolution during the reactive sintering. The effect of synthesis temperature and pressure on crystallite size, density, and transport properties was determined. The results showed that use of MgH2 instead of Mg in the onestep method prevents the formation of MgO. The addition of 1 at.% Bi as a dopant improved the power factor significantly. Samples with 1 at.% Bi had a ZT of 0.6 at 775 K.

After the discovery of Yb14MnSb11 as an outstanding p-type thermoelectric material for high temperatures (≥900 K), site substitution of other elements has been proven to be an effective method to further optimize the thermoelectric properties. Yb14−xRExMnSb11 (RE = Pr and Sm, 0 < x < 0.55) compounds were prepared by powder metallurgy to study their thermoelectric properties. According to powder X-ray diffraction, these samples are iso-structural with Yb14MnSb11 and when more than 5% RE is used in the synthesis the presence of (Yb,RE)4Sb3 is apparent after synthesis. After consolidation and measurement, (Yb,RE)Sb and (Yb,RE)11Sb10 appear in the powder X-ray diffraction patterns. Electron microprobe analysis results show that consolidated pellets have small (Yb,RE)Sb domains and that the maximum amount of RE in Yb14−xRExMnSb11 is x = 0.55, however, (Yb,RE)11Sb10 cannot be distinguished by electron microprobe analysis. By replacing Yb2+ with RE3+, one extra electron is introduced into Yb14MnSb11 and the carrier concentration is adjusted. Thermoelectric performance from room temperature to 1275 K was evaluated through transport and thermal conductivity measurements. The measurement shows that Seebeck coefficients initially increase and then remain stable and that electrical resistivity increases with substitutions. Thermal conductivity is slightly reduced. Substitution of Pr and Sm leads to enhanced zT. Yb13.82Pr0.18Mn1.01Sb10.99 has the best maximum zT value of ∼1.2 at 1275 K, while Yb13.80Sm0.19Mn1.00Sb11.02 has its maximum zT of ∼1.0 at 1275 K, respectively, ∼45% and ∼30% higher than Yb14MnSb11 prepared in the same manner.

Magnesium-containing Zintl phase compounds Yb14MgSb11 and Ca14MgSb11 have been prepared by annealing the mixture of the elements at 1075–1275 K. These compounds are isostructural with the Zintl compound Ca14AlSb11 and crystallize in the tetragonal space group I41/acd (Z = 8). Single-crystal X-ray data (90 K) were refined for Yb14MgSb11 [a = 16.625(9) A, c = 22.24(2) A, V = 6145(8) A3, and R1/wR2 (0.0194/0.0398)] and Ca14MgSb11 [a = 16.693(2) A, c = 22.577(5) A, V = 6291(2) A3, R1/wR2 (0.0394/0.0907)]. This structure type has been shown to be highly versatile with a large number of phases with the general formula A14MPn11 (A = Ca, Sr, Ba, Yb, Eu; M = Mn, Zn, Nb, Cd, Group 13 elements; Pn = Group 15 elements). The two compounds reported in this paper are the first Mg-containing analogs. Replacing M with Mg, which is divalent with no d-orbitals, probes electronic structure and properties of this structure type. Mg2+ is well-known to prefer tetrahedral geometry and allows for integration of the properties of ...

A thermochemical study of three germanium allotropes by differential scanning calorimetry (DSC) and oxidative high-temperature drop solution calorimetry with sodium molybdate as the solvent is described. Two allotropes, microcrystalline allo-Ge (m-allo-Ge) and 4H-Ge, have been prepared by topotactic deintercalation of Li_7Ge_(12) with methanol (m-allo-Ge) and subsequent annealing at 250 °C (4H-Ge). Transition enthalpies determined by differential scanning calorimetry amount to 4.96(5) ± 0.59 kJ/mol (m-allo-Ge) and 1.46 ± 0.55 kJ/mol (4H-Ge). From high-temperature drop solution calorimetry, they are energetically less stable by 2.71 ± 2.79 kJ/mol (m-allo-Ge) and 5.76 ± 5.12 kJ/mol (4H-Ge) than α-Ge, which is the stable form of germanium under ambient conditions. These data are in agreement with DSC, as well as with the previous quantum chemical calculations. The morphology of the m-allo-Ge and 4H-Ge crystallites was investigated by a combination of scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. Even though the crystal structures of m-allo-Ge and 4H-Ge cannot be considered as truly layered, these phases retain the crystalline morphology of the layered precursor Li_7Ge_(12). Investigation by diffuse reflectance infrared Fourier transform spectroscopy and UV–vis diffuse reflectance measurements reveal band gaps in agreement with quantum chemical calculations.

Applications of Ge nanocrystals (NCs) are limited by the stability and air reactivity of the Ge surface. In order to promote stability and increase the diversity of ligand functionalization of Ge NCs, the preparation of thiol-passivated Ge NCs via a ligand exchange process was investigated. Herein a successful replacement of oleylamine ligands on the surface of Ge NCs with dodecanethiol is reported. The successful ligand exchange was monitored by FTIR and NMR spectroscopy and it was found that dodecanethiol provided a better surface coverage, leading to stable Ge NC dispersions. Dodecanethiol capping also enabled band gap determination of the NCs by surface photovoltage (SPV) spectroscopy. The SPV measurements indicated an efficient charge separation in the ligand-exchanged Ge NCs. On the other hand, oleylamine-terminated Ge NCs of similar sizes exhibited a very small photovoltage, indicating a poorly passivated surface.

The compounds, Yb14−xTmxMnSb11 (0

Zintl phases are compounds that have shown promise for thermoelectric applications. The title solid–solution Zintl compounds were prepared from the elements as single crystals using a tin flux for compositions x = 0, 1, 2, and 3. Eu_(11)Cd_6Sb_(12–x)As_x (x < 3) crystallize isostructurally in the centrosymmetric monoclinic space group C2/m (no. 12, Z = 2) as the Sr_(11)Cd_6Sb_(12) structure type (Pearson symbol mC58). Efforts to make the As compositions for x exceeding ~3 resulted in structures other than the Sr_(11)Cd_6Sb_(12) structure type. Single-crystal X-ray diffraction indicates that As does not randomly substitute for Sb in the structure but is site specific for each composition. The amount of As determined by structural refinement was verified by electron microprobe analysis. Electronic structures and energies calculated for various model structures of Eu_(11)Cd_6Sb_(10)As_2 (x = 2) indicated that the preferred As substitution pattern involves a mixture of three of the six pnicogen sites in the asymmetric unit. In addition, As substitution at the Pn4 site opens an energy gap at the Fermi level, whereas substitution at the other five pnicogen sites remains semimetallic with a pseudo gap. Thermoelectric properties of these compounds were measured on hot-pressed, fully densified pellets. Samples show exceptionally low lattice thermal conductivities from room temperature to 775 K: 0.78–0.49 W/mK for x = 0; 0.72–0.53 W/mK for x = 1; and 0.70–0.56 W/mK for x = 2. Eu_(11)Cd_6Sb_(12) shows a high p-type Seebeck coefficient (from +118 to 153 μ V/K) but also high electrical resistivity (6.8 to 12.8 mΩ·cm). The value of zT reaches 0.23 at 774 K. The properties of Eu_(11)Cd_6Sb_(12–x)As_x are interpreted in discussion with the As site substitution.

Single crystals of Ce3Ni25.75Ru3.16Al4.1B10 were obtained from a process in which a polycrystalline sample of CeRu2Al2B was annealed in an excess of a Ni–In flux. The initial phase, CeRu2Al2B, does not recrystallize, instead, crystals of a new phase, Ce3Ni25.75Ru3.16Al4.1B10, could be isolated once the flux was removed. The title compound crystallizes in the tetragonal space group P4/nmm (No. 129) with a=1139.02(8), c=801.68(6) pm (c/a=0.70) in the Nd3Ni29Si4B10 structure type. Electrical resistivity measurements reveal metallic behavior with a minimum of 700 µΩ cm and a small residual resistivity ratio of RRR=1.4 indicating a large amount of disorder scattering. The cerium atoms are either in the 4+ or an intermediate valence state with a valence fluctuation temperature far above room temperature.

Intentional impurity doping lies at the heart of the silicon technology. The dopants provide electrons or holes as necessary carriers of the electron current and can significantly modify the electric, optical and magnetic properties of the semiconductors. P-doped amorphous Si ( a -Si) was prepared by a solid state and solution metathesis reaction of a P-doped Zintl phase precursor, NaSi 0.99 P 0.01 , with an excess of NH 4 X (X = Br, I). After the salt byproduct was removed from the solid state reaction, the a -Si material was annealed at 600 °C under vacuum for 2 h, resulting in P-doped nanocrystalline Si ( nc -Si) material embedded in a -Si matrix. The product from the solution reaction also shows a combination of nc -Si embedded in a -Si; however, it was fully converted to nc -Si after annealing under argon at 650 °C for 30 min. Powder X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) show the amorphous nature of the P-doped Si material before the annealing and the nanocrystallinity after the annealing. Fourier Transform Infrared (FTIR) spectroscopy shows that the P-doped Si material surface is partially capped by H and O or with solvent. Electron microprobe wavelength dispersive spectroscopy (WDS) as well as energy dispersive spectroscopy (EDS) confirm the presence of P in the Si material. 29 Si and 31 P solid state magic-angle-spinning nuclear magnetic resonance (MAS NMR) spectroscopy data provide the evidence of P doping into the Si structure with the P concentration of approximately 0.07 at.%.

A facile size-controlled synthesis (microwave/conventional) of quasi-spherical germanium nanoparticles is reported. Oleylamine serves as a solvent, a binding ligand, and a reducing agent in the synthesis. Reactions were carried out with microwave-assisted heating, and the results have been compared with those produced by conventional heating. Germanium iodides (GeI4, GeI2) were used as the Ge precursor, and size control in the range of 4–11 nm was achieved by controlling the ratio of Ge4+/Ge2+ in the precursor mix. Longer reaction times and higher temperatures were also observed to have an effect on the nanoparticle size distribution. Microwave heating resulted in crystalline nanoparticles at lower temperatures than conventional resistive heating because of the ability of germanium iodides to convert electromagnetic radiation directly to heat. The reported approach for germanium nanoparticle preparation avoids the use of strong reducing agents (LiAlH4, n-BuLi, NaBH4) and HF for etching and, thus, can be c...

Samples with the type-I clathrate composition Ba{sub 8}Ni{sub x}Si{sub 46-x} have been synthesized and their structure and thermoelectric properties characterized. Microprobe analysis indicates the Ni incorporation to be 2.62{

Phase stability of the type-I clathrate compound Ba_(8)Al_(x)Si_(46−x) and the thermoelectric property dependence on chemical composition are presented. Polycrystalline samples were prepared by argon arc melting and annealing. Results of powder X-ray diffraction and electron microprobe analysis show that the type-I structure is formed without framework deficiency for 8≤x≤15. Lattice constant a increases linearly with the increase of x. Thermoelectric properties were measured for x=12, 14 and 15. The Seebeck coefficients are negative, with the absolute values increasing with x. The highest figure of merit zT=0.24 was observed for x=15 at T=1000 K, with carrier electron density n=3×10^(21) cm^(−3). A theoretical calculation based on the single parabolic band model reveals the optimum carrier concentration to be n~4×10^(20) cm^(−3), where zT~0.7 at T=1000K is predicted.

The title compound was prepared as single crystals using an aluminum flux technique. Single crystal and powder X-ray diffraction indicate that this composition crystallizes in the clathrate type-I structure, space group Pm3n. Electron microprobe characterization indicates the composition to be Ba_(8−y)Sr_yAl_(14.2(2))Si_(31.8(2)) (0.77

Na4Si4 is a Zintl salt composed of Na+ cations and Si 4 4 − tetrahedral anions and is a unique solid-state precursor to clathrate structures and nanomaterials. In order to provide opportunities for the synthesis of complex materials, phosphorus was explored as a possible substituent for silicon. Phosphorus doped sodium silicides Na4Si4−xPx (x≤0.04) were prepared by reaction of Na with the mechanically alloyed Si4−x:Px (x=0.04, 0.08, 0.12) mixture in a sealed Nb tube at 650 °C for 3 days. Energy dispersive X-ray spectroscopy confirms the presence of P in all products. Powder X-ray diffraction patterns are consistent with the retention of the Na4Si4 crystal structure. As the amount of P increases, a new peak in the diffraction pattern that can be assigned to black phosphorus is apparent above the background. Raman and solid-state NMR provide information on phosphorus substitution in the Na4Si4 structure. Raman spectroscopy shows a shift of the most intense band assigned to the Si 4 4 − ν1 (A1) mode from 486.4 to 484.0 cm−1 with increasing P, consistent with P replacement of Si. Differential nuclear spin-lattice relaxation for the Si sites determined via 29Si solid-state NMR provides direct evidence for Si–P bonding in the (Si1−xPx)4− tetrahedron. The 23Na NMR shows additional Na…P interactions and the 31P NMR shows two P sites, consistent with P presence in both of the crystallographic sites in the (Si4)4− tetrahedron.

Chemical hydrides are compounds that can potentially uptake and release hydrogen without the use of hydrogen gas. Nanostructure silicon may have great potential as a chemical hydride. The surface can be capped by hydride and dihydride, and hydrogen can be thermally desorbed from the surface. We have prepared large-scale (1−2 g) samples of hydrogen-capped silicon nanoparticles with average diameters of 60, 10, 5, and 4 nm via a low-temperature chemical method to explore the release of hydrogen from the surface as a function of size. The 60- and 10-nm-diameter particles have only hydrogen on the surface. The 60-nm-diameter particles are crystalline, and the 10-nm-diameter particles are amorphous according to powder X-ray diffraction (XRD). The 5- and 4-nm-diameter particles have both hydrogen and solvent capped on the surface. The 4-nm-diameter particles are amorphous and the 5-nm-diameter particles are crystalline by powder XRD. Weight percentages of ∼3.5% at 350 °C are observed for the 10-nm-diameter part...