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We theoretically study how magnetic modulation can be used to manipulate the transport properties of heterostructures formed by a thin film of a three-dimensional topological insulator sandwiched between slabs of a normal insulator. Employing the k ∙ p scheme, in the framework of a continual approach, we argue that electron states of the system are spin-polarized when ultrathin magnetic insertions are incorporated into the film. We demonstrate that (i) the spin-polarization magnitude depends strongly on the magnetic insertion position in the film and (ii) there is the optimal insertion position to realize quantum anomalous Hall effect, which is a function of the material parameters, the film thickness and the topological insulator/normal insulator interface potential. For the heterostructure with a pair of symmetrically placed magnetic insertions, we calculate a phase diagram that shows a series of transitions between distinct quantum regimes of transverse conductivity. We provide consistent interpretation of recent experimental findings in the context of our results. [ABSTRACT FROM AUTHOR]

The transport and magnetic properties of Mn xSi1 − x films with a high ( x ≈ 0.35) content of Mn produced by laser deposition at growth temperatures of 300–350°C have been studied in a temperature range of 5–300 K in magnetic fields of up to 2.5 T. The films exhibit a hole-type metallic conductivity and a relatively weak change of magnetization in a temperature range of 50–200 K. An anomalous Hall effect with an essentially hysteretic behavior from 50 K up to ≈230 K has been discovered. The properties of the films are explained by the two-phase model, in which ferromagnetic clusters containing interstitial Mn ions with a localized magnetic moment are embedded in the matrix of a weak band MnSi2 − x ( x ≈ 0.3) type ferromagnet with delocalized spin density. [ABSTRACT FROM AUTHOR]

The field and temperature dependences of the magnetization of GaAs/δ〈Mn〉/GaAs/In x Ga1 − x As/GaAs quantum wells with the δ〈Mn〉 layer separated from the well by a 3-nm GaAs spacer have been studied in the temperature range of 3–300 K in a magnetic field up to 6 T. An external magnetic-field-induced phase transition to a ferromagnetic state with a magnetization hysteresis loop shifted from a zero magnetic field has been found to occur at a temperature below 40 K. A theoretical model is proposed that implies the coexistence of ferromagnetically and antiferromagnetically ordered regions within the GaAs layers. [ABSTRACT FROM AUTHOR]

Magnetic and magnetotransport properties of multilayered nanostructures Co0.45Fe0.45Zr0.1/ a-Si obtained by ion-beam sputtering are investigated. The temperature dependence of the resistance obeys a law of the form R xx ∝-log T, which is typical of metal-insulator nanocomposites on the metal side of the percolation transition. The magnetoresistance anisotropy effect, as well as the planar Hall effect, is observed for the first time for this type of nanocomposites in the vicinity of the percolation transition. The correlation of these two effects with the transverse (between Hall probes) magnetoresistive effect, which may reach 6–9%, is revealed. A weak negative magnetoresistance of the order of 0.15%, which is observed for subnanometer amorphous silicon layer thicknesses, is attributed to spin-dependent electron transitions between adjacent ferromagnetic layers in the case when the exchange interaction between these layers is of the antiferromagnetic type. [ABSTRACT FROM AUTHOR]

The magnetic phase diagram of the Fe/Cr/Fe three-layer structure with almost ideal interlayer boundaries was constructed. The effective interlayer interaction in this structure was described by the “half-angle coupling” model. Various system configurations were analyzed taking into account crystalline anisotropy, and the ground state of the system was determined. The behavior of the structure in an external magnetic field applied along easy and hard magnetic axes was studied. The magnetization curves M(H) characteristic of structures with various interface roughness parameter and interlayer exchange values were described and analyzed. The experimental situation is discussed. © 2005 Pleiades Publishing, Inc. [ABSTRACT FROM AUTHOR]