Magnetic properties of GaAs/δ〈Mn〉/GaAs/In x Ga1 − x As/GaAs quantum wells.

Authors :: Aronzon, B. A.
Lagutin, A. S.
Ryl'kov, V. V.
Tugushev, V. V.
Men'shov, V. N.
Lashkul, A. V.
Laiho, R.
Vikhrova, O. V.
Danilov, Yu. A.
Zvonkov, B. N.
Source :: JETP Letters; Apr2008, Vol. 87 Issue 3, p164-169, 6p, 1 Chart, 4 Graphs
Publication Year :: 2008
Abstract: The field and temperature dependences of the magnetization of GaAs/δ〈Mn〉/GaAs/In<subscript> x </subscript>Ga<subscript>1 − x </subscript>As/GaAs quantum wells with the δ〈Mn〉 layer separated from the well by a 3-nm GaAs spacer have been studied in the temperature range of 3–300 K in a magnetic field up to 6 T. An external magnetic-field-induced phase transition to a ferromagnetic state with a magnetization hysteresis loop shifted from a zero magnetic field has been found to occur at a temperature below 40 K. A theoretical model is proposed that implies the coexistence of ferromagnetically and antiferromagnetically ordered regions within the GaAs layers. [ABSTRACT FROM AUTHOR]