1. A High-Efficiency Dynamic Inverter Dead-Time Adjustment Method Based on an Improved GaN HEMTs Switching Model
- Author
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Yi Zhang, Cai Chen, Yue Xie, Han Peng, Teng Liu, and Yong Kang
- Subjects
Materials science ,Transistor ,Gallium nitride ,Dead time ,Converters ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,Control theory ,Parasitic element ,Inverter ,Transient (oscillation) ,Electrical and Electronic Engineering ,Voltage - Abstract
Benefited from the fast switching speed, Gallium nitride (GaN) high electron mobility transistors (HEMTs) have been widely used in high switching frequency converters. However, due to the significant correlation between the turn-off time and operating conditions (more than 20 times difference of the turn-off time between the high load current and small load current for GaN HEMTs), using a fixed dead time will introduce extra dead-time losses in inverters where the output voltage and current are constantly varying. Therefore, this paper proposes a high-efficiency adaptive method to dynamically adjust the GaN-inverter dead-time with operating conditions. An improved transient model including the parasitic inductance and output voltage with bidirectional solution flow has been proposed for GaN HEMTs to increase the accuracy of dead-time adjustment. Based on this model, the dynamic dead-time adjustment can be realized without extra sensors for GaN-inverters. Using the dynamic dead-time adjustment, the experimental results show a peak efficiency of 98.25% in a 1200W inverter with triangular current mode modulation. Compared with using the fixed dead-time, the dynamic dead-time method can reduce the power loss by 26.7% under full load and 49.14% under light load.
- Published
- 2022