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We derive a spin-diffusion length at 4.2 K in sputtered Au, l[SUBsf,SUPAu] = 35[SUB-5,SUP+65] nm, spin-memory-loss at Au/Cu interfaces, δ[SUBAu/Cu] = 0.13[SUB-0.02,SUP+0.08], and Au/Cu interface specific resistance, 2AR[SUBAu/Cu] = 0.35[SUB-0.05,SUP+0.10] fΩ m[SUP2]. We also show that exchange biased spin valves with Au sandwiched between Co layers produce changes in specific resistance, A Δ R, comparable to those for Cu and Ag. [ABSTRACT FROM AUTHOR]

Giant magnetoresistance (GMR) type Co-Cu multilayers and exchange-biased spin-valve (EBSV) type Co-Cu-Co tri-layers are fabricated by sputtering with a thin layer of Ag inserted between Co and Cu as a surface modifier (SM). Their magnetoresistances (MR) are measured in both current-perpendicular-to-plane (CPP) and current-in-plane (CIP) configurations. In all situations, the size of the MR change decreases as the Ag SM is introduced, and the effect is interface related. [ABSTRACT FROM AUTHOR]