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Spin-memory loss and current-perpendicular-to-plane-magnetoresistance in sputtered multilayers with Au.
- Source :
-
Journal of Applied Physics . 5/15/2003, Vol. 93 Issue 10, p7918. 3p. 5 Graphs. - Publication Year :
- 2003
-
Abstract
- We derive a spin-diffusion length at 4.2 K in sputtered Au, l[SUBsf,SUPAu] = 35[SUB-5,SUP+65] nm, spin-memory-loss at Au/Cu interfaces, δ[SUBAu/Cu] = 0.13[SUB-0.02,SUP+0.08], and Au/Cu interface specific resistance, 2AR[SUBAu/Cu] = 0.35[SUB-0.05,SUP+0.10] fΩ m[SUP2]. We also show that exchange biased spin valves with Au sandwiched between Co layers produce changes in specific resistance, A Δ R, comparable to those for Cu and Ag. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SURFACE chemistry
*SEMICONDUCTOR doping
*MEMORY
*VALVES
*INTERFACE circuits
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 93
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 9718620
- Full Text :
- https://doi.org/10.1063/1.1540157