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Solid solutions of Yb2-xAxCdSb2 (A = Ca, Sr, Eu; x ≤ 1) are of interest for their promising thermoelectric (TE) properties. Of these solid solutions, Yb2-xCaxCdSb2 has end members with different crystal structures. Yb2CdSb2 crystallizes in the polar space group Cmc21, whereas Ca2CdSb2 crystallizes in the centrosymmetric space group Pnma. Other solid solutions, Yb2-xAxCdSb2 (A = Sr, Eu), crystallize in the polar space group for x ≤ 1, and compositions with x ≥ 1 have not been reported. Both structure types are composed of corner-sharing CdSb4 tetrahedra condensed into sheets that differ by the stacking of the layers. Single crystals of the solid solution Yb2-xCaxCdSb2 (x = 0-1) were studied to elucidate the structural transition between the Yb2CdSb2 and Ca2CdSb2 structure types. For x ≤ 1, the structures remain in the polar space group Cmc21. As the Ca content is increased, a positional disorder arises in the intralayer cation sites (Yb2/Ca2) and the Cd site, resulting in inversion of the CdSb4 tetrahedral chain. This phenomenon could be indicative of an intergrowth of the opposing space group. The TE properties of polycrystalline samples of Yb2-xCaxCdSb2 (x ≤ 1) were measured from 300 to 525 K. The lattice thermal conductivity is extremely low (0.3-0.4 W/m·K) and the Seebeck coefficients are high (100-180 μV/K) across the temperature range. First-principles calculations show a minimum in the thermal conductivity for the x = 0.3 composition, in good agreement with experimental data. The low thermal conductivity stems from the acoustic branches being confined to low frequencies and a large number of phonon scattering channels provided by the localized optical branches. The TE quality factor of the Yb1.7A0.3CdSb2 (A = Ca, Sr, Eu) series has been calculated and predicts that the A = Ca and Sr solid solutions may not improve with carrier concentration optimization but that the Eu series is worthy of additional modifications. Overall, the x = 0.3 compositions provide the highest zT because they provide the best electronic properties with the lowest thermal conductivity.

A rare-earth-containing compound, ytterbium aluminium antimonide, Yb3AlSb3(Ca3AlAs3-type structure), has been successfully synthesized within the Yb–Al–Sb system through flux methods. According to the Zintl formalism, this structure is nominally made up of (Yb2+)3[(Al1−)(1b– Sb2−)2(2b– Sb1−)], where1band2bindicate 1-bonded and 2-bonded, respectively, and Al is treated as part of the covalent anionic network. The crystal structure features infinite corner-sharing AlSb4tetrahedra, [AlSb2Sb2/2]6−, with Yb2+cations residing between the tetrahedra to provide charge balance. Herein, the synthetic conditions, the crystal structure determined from single-crystal X-ray diffraction data, and electronic structure calculations are reported.

The structure, magnetic properties, and 151Eu and 119Sn Mossbauer spectra of the solid-solution Eu11–xSrxZn4Sn2As12 are presented. A new commensurately modulated structure is described for Eu11Zn4S...

The mineral Zlatogorite, CuNiSb2, was synthesized in the laboratory for the first time by annealing elements at ambient pressure (CuNiSb2-AP). Rietveld refinement of synchrotron powder X-ray diffraction data indicates that CuNiSb2-AP crystallizes in the NiAs-derived structure (P3m1, #164) with Cu and Ni ordering. The structure consists of alternate NiSb6 and CuSb6 octahedral layers via face-sharing. The formation of such structure instead of metal disordered NiAs-type structure (P63/mmc, #194) is validated by the lower energy of the ordered phase by first-principle calculations. Interatomic crystal orbital Hamilton population, electron localization function, and charge density analysis reveal strong Ni-Sb, Cu-Sb, and Cu-Ni bonding and long weak Sb-Sb interactions in CuNiSb2-AP. The magnetic measurement indicates that CuNiSb2-AP is Pauli paramagnetic. First-principle calculations and experimental electrical resistivity measurements reveal that CuNiSb2-AP is a metal. The low Seebeck coefficient and large thermal conductivity suggest that CuNiSb2 is not a potential thermoelectric material. Single crystals were grown by chemical vapor transport. The high pressure sample (CuNiSb2-8 GPa) was prepared by pressing CuNiSb2-AP at 700 °C and 8 GPa. However, the structures of single crystal and CuNiSb2-8 GPa are best fit with a disordered metal structure in the P3m1 space group, corroborated by transmission electron microscopy.

Indirect ligand exchange methods have been demonstrated to replace the oleylamine capping with dodecanethiol for germanium nanocrystals (Ge NCs). In these methods, hydrazine is employed to effectiv...

Yb14MnSb11 is a member of a remarkable structural family of compounds that are classified according to the concept of Zintl. This structure type, of which the prototype is Ca14AlSb11, provides a flexible framework for tuning structure-property relationships and hence the physical and chemical properties of compounds. Compounds within this family show exceptional high temperature thermoelectric performance at temperatures above 300 K and unique magnetic and transport behavior at temperatures below 300 K. This review provides an overview of the structure variants, the magnetic properties, and the thermoelectric properties. Suggestions for directions of future research are provided.

Type I clathrates of the composition K8E8Ge38 (E = Al, Ga, In) were prepared via the reaction of KH with E and Ge and thermoelectric properties measured in order to compare to K8Al8Si38, a promisin...

Solvent effects on the microwave-assisted synthesis of germanium nanoparticles are presented. A mixture of oleylamine and 1-dodecene was used as the reaction solvent. Oleylamine serves as a reducing agent in the synthesis while both molecules act as binding ligands. Increased concentrations of 1-dodecene in the solvent mixture were found to increase the size of the formed nanoparticles. Crystallinity was also dependent on the solvent mixture. Amorphous nanoparticles were obtained at lower 1-dodecene concentrations, whereas, at higher concentrations, particles contained crystalline and amorphous domains. 11-Methoxyundec-1-ene was synthesized to replace 1-dodecene in the reaction mixture for nuclear magnetic resonance (NMR) studies. 1H NMR of the reaction products shows that both solvent molecules in the system act as binding ligands on the nanoparticle surface. Nanoparticles were characterized using powder X-ray diffraction, scanning transmission electron microscopy, and spectroscopy techniques (Raman, UV–...

Nanogermanium is a material that has great potential for technological applications, and doped and alloyed Ge nanocrystals (NCs) are actively being considered. New alloys and compositions are possible in colloidal synthesis because the reactions are kinetically rather than thermodynamically controlled. Most of the Group V elements have been shown to be n-type dopants in Ge to increase carrier concentration; however, thermodynamically, Bi shows no solubility in crystalline Ge. Bi-doped Ge NCs were synthesized for the first time in a microwave-assisted solution route. The oleylamine capping ligand can be replaced by dodecanethiol without loss of Bi. A positive correlation between the lattice parameter and the concentration of Bi content (0.5–2.0 mol %) is shown via powder X-ray diffraction and selected area electron diffraction. X-ray photoelectron spectroscopy, transmission electron microscopy (TEM), scanning TEM, and inductively coupled plasma–mass spectroscopy are consistent with the Bi solubility up to ...

The title compound with the nominal formula, Sr13Eu8Cd3Mn1Sb18, was synthesized by Sn-flux. Structure refinement was based on single-crystal X-ray diffractometer data. Employing the exact composition, the formula is Sr13.23Eu7.77Cd3.12Mn0.88Sb18 for the solid solution Sr21-xEuxCd4-yMnySb18. This phase adopts the Sr21Mn4Sb18 type structure with site preferences for both Eu and Cd. The structure crystallizes in the monoclinic system in space group C2/m and Z=4: a=18.1522(11), b=17.3096(10), c=17.7691(10) Å, β=91.9638(8)°, 6632 F2 values, 216 variables, R1=0.0254 and wR2=0.0563. Site selectivity of the elements in this new compound will be discussed in relationship with the Sr21Mn4Sb18 type structure and other related structure types. Temperature dependent magnetic susceptibility data reveal Curie–Weiss paramagnetism with an experimental moment of 19.3 μB/f.u. and a Weiss constant of 0.4 K. Magnetic ordering is seen at low temperatures, with a transition temperature of 3.5 K.

Zintl phases Yb14MnSb11 and Yb14MgSb11, which share the same complex structure type, have been demonstrated as the best p-type thermoelectric materials for the high temperature region (800-1200 K). A new iso-structural compound, Yb14MgBi11, was synthesized in order to investigate the structure and thermoelectric properties of the Bi analogs. Yb14MgBi11 crystallizes in the Ca14AlSb11 structure-type with the space group I41/acd [a = 16.974(2) A, c = 22.399(4) A, V = 6454(2) A3, R1/wR2 = 0.0238/0.0475]. The structure follows the previous description of this structure type and the trend observed in previous analogs. Thermoelectric properties of Yb14MgBi11 are measured together with Yb14MnBi11 and both compounds are metallic. Compared to Yb14MgSb11, Yb14MgBi11 has a higher carrier concentration with a similar mobility and effective mass. The lattice thermal conductivity of Yb14MgBi11 is extremely low, which is as low as 0.16-0.36 W(mK)-1. The zT values of Yb14MgBi11 and Yb14MnBi11 reach 0.2 at 875 K.

Within the field of thermoelectric materials for energy conversion magnesium silicide, Mg2Si, is an outstanding candidate due to its low density, abundant constituents and low toxicity. However electronic and thermal tuning of the material is a required necessity to improve its Figure of Merit, zT. Doping of Yb via reactive YbH2 into the structure is performed with the goal of reducing the thermal conductivity. Hydrogen is released as a by-product at high temperatures allowing for facile incorporation of Yb into the structure. We report on the properties of Yb- and Bi-doped Mg2Si prepared with MgH2 and YbH2 with the focus on the synthetic conditions, and samples’ microstructure, investigated by various electron microscopy techniques. Yb is found in the form of both Yb3Si5 inclusions and Yb dopant segregated at the grain boundary substituting for Mg. The addition of 1 at% Yb concentration reduced the thermal conductivity, providing a value of 30 mW/cm K at 800 K. In order to adjust carrier concentration, the sample is additionally doped with Bi. The impact of the microstructure on the transport properties of the obtained material is studied. Idealy, the reduction of the thermal conductivity is achieved by doping with Yb and the electronic transport is adjusted by doping with Bi. Large grain microstructure facilitates the electronic transport. However, the synthetic conditions that provide the optimized microstructure for electrical transport do not facilitate the additional Yb dopant incorporation. Therefore, the Yb and Bi containing sample with the optimized microstructure provides a zT=0.46 at 800 K.

Eu11–xYbxCd6Sb12 Zintl solid solutions have been prepared by tin flux reaction by employing the elements Eu/Yb/Cd/Sb/Sn in the ratio 11 – xp:xp:6:12:30, where xp is an integer less than 11 representing the preparative amount of Eu (11 – xp) and Yb (xp). Efforts to make the Yb compositions for x exceeding ∼3 resulted in structures other than the Sr11Cd6Sb12 structure type. The crystal structures and compositions were determined by single-crystal and powder X-ray diffraction and wavelength-dispersive X-ray analysis measurements. The title solid-solution Zintl compounds crystallize in the centrosymmetric monoclinic space group C2/m (no. 12, Z = 2) as the Sr11Cd6Sb12 structure type (Pearson symbol mC58), and the lattice parameters decrease with increasing ytterbium content. Single crystal X-ray diffraction shows that Yb atoms are not randomly distributed in the Eu sites but have a site preference which can be attributed to size effects. The influence of the rare earth (RE) metal sites on thermal and electroni...

Yb14MnSb11 is the most efficient bulk p-type thermoelectric material for high temperature applications. Materials with Y and Sc substitutions in Yb14MnSb11 were made both in Sn-flux and by ball milling. These small 3+ rare earth (RE) cations were introduced with the goal of providing chemical pressure on the structure. The RE3+ cation is smaller than Yb2+ and also donates one additional electron to this p-type semiconductor. In Yb14−xRExMnSb11 (RE = Sc, Y) the maximum x was about 0.5. X-ray diffraction experiments on the single crystals obtained from Sn-flux showed that Sc preferentially substitutes for Yb(1) and Yb(3), and decreases the size of the unit cell by about 0.3%. Y substitutes on all Yb sites and increases the size of the unit cell by about 0.2%. Samples with Yb14−xRExMnSb11 (x~0.3) were prepared via powder metallurgy and spark plasma sintering for transport and thermal conductivity measurements. Electron microprobe of the Sc-substituted sample showed small regions (≤1 μ m) containing greater amounts of Sc, and X-ray powder diffraction of the ball milled Sc sample could be fitted as phase pure Yb14−xScxMnSb11. Y-substituted samples showed larger regions of excess Y in electron microprobe, and small amounts of Yb4Sb3 in X-ray powder diffraction. The Sc sample has slightly reduced carrier concentration over optimized Yb14MnSb11, while the Y samples have even lower carrier concentrations. These carrier concentrations lead to comparable resistivity to Yb14MnSb11 in the Sc-substituted material, and higher resistivities in the Y-substituted material. All materials had similar Seebeck coefficients that slightly exceed Yb14MnSb11 at high temperatures, with the Sc-substituted sample having the highest despite having a higher carrier concentration. Sc-substituted samples also had a slightly higher thermal conductivity over the Y-substituted samples, which had comparable thermal conductivity to Yb14MnSb11. The zT values of the Sc and Y substituted samples are similar (zT1000 K~0.8), however below that of Yb14MnSb11 due to the compensation of Seebeck and resistivity.

Single crystals of Yb14−xRExMnSb11 (x~0.1, 0.4; RE = Tb, Dy, Ho) have been prepared as a solid solution by Sn flux reactions of the elements. They crystallize in the Ca14AlSb11 structure type in the I41/acd space group. The RE3+preferentially substitutes on the Yb(1) site which is the smallest volume Yb containing polyhedron. In the case of Ho3+, a small amount of Ho3+ also substitutes on the Yb(4) site. The ferromagnetic ordering temperature of Yb14MnSb11 is reduced from 53 K to 41 K as x increases and dependent on the identity of the RE. This is attributed to the reduction in carriers and reduced screening of the Mn2+ local moment. The effective moments, μeff, agree well with the calculated moments assuming the RE substitutes as a trivalent cation. The largest coercive field is observed for RE = Dy (1000 Oe). For the maximum x of Yb14−xRExMnSb11 there are enough carriers for the Ruderman-Kittel-Kasuya-Yosida (RKKY) mechanism of magnetic coupling via conduction electrons to still be valid in describing the ferromagnetic ordering.

EuGa4 hosts a magnetic Eu2+ sublattice surrounded by a network of covalently-bound Ga atoms with the BaAl4 structure type (space group I4/ m m m ). In this study, we present the synthesis and characterization of three new single crystal substitutional series Eu A x 1 − x Ga4 with A ​= ​Ca, Sr, or La. X-ray diffraction and resistivity measurements show that Ca substitution induced a structural phase transition from the tetragonal crystal structure at high temperatures to the monoclinic crystal structure (CaGa4 type, space group C2/m) at low temperatures and suppressed the antiferromagnetic ordering temperature to 8.8 ​K for x ​= ​0.45. Comparatively, La or Sr substitution maintained the tetragonal crystal structure and suppressed the antiferromagnetic ordering temperatures to 6.7 ​K and 1.6 ​K for (A, x) = (La, 0.37) and (Sr, 0.91), respectively. In addition to suppressing the magnetic order, magnetization and specific heat measurements indicate the onset of anisotropic metamagnetic transitions in (La, 0.18), (La, 0.37), and (Sr, 0.63), along with an incommensurate-to-commensurate magnetic transition in (Sr, 0.38). By comparing these effects of doping EuGa4, we show how size, disorder, and charge determine the structure-physical property relations in EuGa4.

A novel Zintl phase structure type, Eu7Cd4Sb8-xAsx (x = 2, 3, 4, and 5), with the general formula Eu7Cd4Pn8 (Pn = mixed occupancy Sb and As), was synthesized by molten tin flux reaction. Its structure was determined using single-crystal X-ray diffraction methods. This structure type is only preserved for 2 ≤ x ≤ 5 under our experimental conditions, and efforts to synthesize samples with x2 or x5 resulted in other structure types. The mixed occupancy Sb and As can be thought of as a pseudoatom whose ideal size, in this range of Sb/As ratios, fits the structure. The title phase crystallizes in the I-centered monoclinic space group I2/m (No. 12, Z = 4) with unit cell parameters ranging as follows: a = 19.7116(17)-19.4546(13) Å, b = 4.6751(4)-4.6149(3) Å, c = 24.157(2)-23.871(15) Å, and β = 95.8798(1)-96.016(5)°, depending on the Sb/As ratio. The structure can be described as parallel double pentagonal tubes resulting from Cd-Pn and Pn-Pn bonding. These double pentagons are formed through corner sharing of the Cd-centered CdPn4 tetrahedra and a Pn-Pn interaction from two adjacent CdPn4 tetrahedra. This structure type is closely related to the Sr11Cd6Sb12 structure type as both share the same bonding features of Pn-Pn bonding and double pentagonal tubes. Electron microprobe analysis confirms the composition of these new Zintl solid solution phases. The As exhibits preferential substitution on specific sites, and site specificity trends are supported by lowest energy models from theoretical calculations. Theoretical calculations also predict that Sb-rich compounds should be metallic or semimetallic and that they should become more insulating as As content increases. Members of the solid-solution order ferromagnetically between 5 and 6 K and exhibit relatively low electrical resistivity between 50 and 300 K, ranging from ∼0.57 to ∼26 mΩ·cm, increasing with increasing As content.

A series of alkali metal containing compounds with type I clathrate structure, A8Ga8Si38 (A = K, Rb, Cs) and K8Al8Si38, were synthesized and characterized. Room temperature lattice parameters of A8Ga8Si38 (A = K, Rb, Cs) and K8Al8Si38 were determined to be 10.424916(10), 10.470174(13), 10.535069(15), and 10.48071(2) A, respectively. The type I clathrate structure (cubic, Pm3n) was confirmed for all phases, and in the case of K8Al8Si38 and K8Ga8Si38, the structures were also refined using synchrotron powder diffraction data. The samples were consolidated by Spark Plasma Sintering (SPS) for thermoelectric property characterization. Electrical resistivity was measured by four probe AC transport method in the temperature range of 30 to 300 K. Seebeck measurements from 2 to 300 K were consistent with K8Al8Si38 and K8Ga8Si38 being n-type semiconductors, while Rb8Ga8Si38 and Cs8Ga8Si38 were p-type semiconductors. K8Al8Si38 shows the lowest electrical resistivity and the highest Seebeck coefficient. This phase a...

Magnesium-containing Zintl phase compounds Yb14MgSb11 and Ca14MgSb11 have been prepared by annealing the mixture of the elements at 1075–1275 K. These compounds are isostructural with the Zintl compound Ca14AlSb11 and crystallize in the tetragonal space group I41/acd (Z = 8). Single-crystal X-ray data (90 K) were refined for Yb14MgSb11 [a = 16.625(9) A, c = 22.24(2) A, V = 6145(8) A3, and R1/wR2 (0.0194/0.0398)] and Ca14MgSb11 [a = 16.693(2) A, c = 22.577(5) A, V = 6291(2) A3, R1/wR2 (0.0394/0.0907)]. This structure type has been shown to be highly versatile with a large number of phases with the general formula A14MPn11 (A = Ca, Sr, Ba, Yb, Eu; M = Mn, Zn, Nb, Cd, Group 13 elements; Pn = Group 15 elements). The two compounds reported in this paper are the first Mg-containing analogs. Replacing M with Mg, which is divalent with no d-orbitals, probes electronic structure and properties of this structure type. Mg2+ is well-known to prefer tetrahedral geometry and allows for integration of the properties of ...

Na + extraction from Na 2 Ti 2 Sb 2 O has been attempted using polytetrafluoroethylene (PTFE; empirical formula CF 2 ) as the extraction reagent. Systematic increase in both lattice parameters a along the intralayer direction and c along the interlayer direction was observed with respect to the reacted PTFE amounts, suggesting the successful deintercalation of the interlayer Na + . In addition, ferromagnet-like behavior, which is rare for systems consisting of ions with low magnetic moments, such as Ti 3+ (d 1 ), was observed in the Na + -deintercalated Na 2 Ti 2 Sb 2 O. This result suggests that the method of alkali–metal ion extraction using polytetrafluoroethylene as an extraction reagent (AEP) can be utilized in order to induce interesting and important properties in compounds including highly air- and solvent-sensitive mixed-anion compounds such as Na 2 Ti 2 Sb 2 O.

We have developed a fast, easy, and scalable synthesis method for Ba1xKxFe2As2 (0 ≤ x ≤ 1) superconductors using hydrides BaH2 and KH as a source of barium and potassium metals. Synthesis from hydrides provides better mixing and easier handling of the starting materials, consequently leading to faster reactions and/or lower synthesis temperatures. The reducing atmosphere provided by the evolved hydrogen facilitates preparation of oxygen-free powders. By a combination of methods we have shown that Ba1xKxFe2As2 obtained via hydride route has the same characteristics as when it is prepared by traditional solid-state synthesis. Refinement from synchrotron powder X-ray diffraction data confirms a linear dependence of unit cell parameters upon K content as well as the tetragonal to orthorhombic transition at low temperatures for compositions with x < 0.2. Magnetic measurements revealed dome-like dependence of superconducting transition temperature Tc upon K content with a maximum of 38 K for x close to 0.4. Electron diffraction and high-resolution high-angle annular dark-field scanning transmission electron microscopy indicates an absence of Ba/K ordering, while local inhomogeneity in the Ba/K distribution takes place at a scale of several angstroms along [110] crystallographic direction.

The synthesis, crystal structure, magnetic properties, and europium Mossbauer spectroscopy of the new members of the 9–4–9 Zintl family of Eu9Cd4–xCM2+x–y□ySb9 (CM = coinage metal: Au, Ag, and Cu) are reported. These compounds crystallize in the Ca9Mn4Bi9 structure type (9–4–9) with the 4g interstitial site almost half-occupied by coinage metals; these are the first members in the 9–4–9 family where the interstitial positions are occupied by a monovalent metal. All previously known compounds with this structure type include divalent interstitials where these interstitials are typically the same as the transition metals in the anionic framework. Single-crystal magnetic susceptibility data indicate paramagnetic behavior for all three compounds with antiferromagnetic ordering below 10 K (at 100 Oe) that shifts to lower temperature (

The compounds, Yb14−xTmxMnSb11 (0

Single crystals of Ce3Ni25.75Ru3.16Al4.1B10 were obtained from a process in which a polycrystalline sample of CeRu2Al2B was annealed in an excess of a Ni–In flux. The initial phase, CeRu2Al2B, does not recrystallize, instead, crystals of a new phase, Ce3Ni25.75Ru3.16Al4.1B10, could be isolated once the flux was removed. The title compound crystallizes in the tetragonal space group P4/nmm (No. 129) with a=1139.02(8), c=801.68(6) pm (c/a=0.70) in the Nd3Ni29Si4B10 structure type. Electrical resistivity measurements reveal metallic behavior with a minimum of 700 µΩ cm and a small residual resistivity ratio of RRR=1.4 indicating a large amount of disorder scattering. The cerium atoms are either in the 4+ or an intermediate valence state with a valence fluctuation temperature far above room temperature.

Intentional impurity doping lies at the heart of the silicon technology. The dopants provide electrons or holes as necessary carriers of the electron current and can significantly modify the electric, optical and magnetic properties of the semiconductors. P-doped amorphous Si ( a -Si) was prepared by a solid state and solution metathesis reaction of a P-doped Zintl phase precursor, NaSi 0.99 P 0.01 , with an excess of NH 4 X (X = Br, I). After the salt byproduct was removed from the solid state reaction, the a -Si material was annealed at 600 °C under vacuum for 2 h, resulting in P-doped nanocrystalline Si ( nc -Si) material embedded in a -Si matrix. The product from the solution reaction also shows a combination of nc -Si embedded in a -Si; however, it was fully converted to nc -Si after annealing under argon at 650 °C for 30 min. Powder X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) show the amorphous nature of the P-doped Si material before the annealing and the nanocrystallinity after the annealing. Fourier Transform Infrared (FTIR) spectroscopy shows that the P-doped Si material surface is partially capped by H and O or with solvent. Electron microprobe wavelength dispersive spectroscopy (WDS) as well as energy dispersive spectroscopy (EDS) confirm the presence of P in the Si material. 29 Si and 31 P solid state magic-angle-spinning nuclear magnetic resonance (MAS NMR) spectroscopy data provide the evidence of P doping into the Si structure with the P concentration of approximately 0.07 at.%.

Samples with the type-I clathrate composition Ba{sub 8}Ni{sub x}Si{sub 46-x} have been synthesized and their structure and thermoelectric properties characterized. Microprobe analysis indicates the Ni incorporation to be 2.62{

Single crystals of CeRu0.5Ni0.5Al can be obtained from a Ce-Ni melt using elements as starting materials. The presented compound crystallizes in the orthorhombic space group Pnma (no. 62) with a = 700.38(7), b = 416.92(4) and c = 1562.84(16) pm in the LaNiAl structure type. The compound shows an unusual temperature dependence of the magnetic susceptibility for T < 20 K although the cerium cations exhibit no local moment behavior. This feature is also visible in the electrical resistivity.

The high temperature p-type thermoelectric material Yb(14)MnSb(11) has been of increasing research interest since its high temperature thermoelectric properties were first measured in 2006. Subsequent substitutions of Zn, Al, and La into the structure have shown that this material can be further optimized by altering the carrier concentration or by reduction of spin-disorder scattering. Here the properties of the Yb(14-x)Ca(x)MnSb(11) solid solution series where isovalent Ca(2+) is substituted for Yb(2+) will be presented. Crystals of the Yb(14-x)Ca(x)MnSb(11) solid solution series were made by Sn-flux (x = 2, 4, 6, 8) with the following ratio of elements: (14-x)Yb: xCa: 6 Mn: 11Sb: 86Sn, and their structures determined by single crystal X-ray diffraction. The density of the material significantly decreases by over 2 g/cm(3) as more Ca is added (from x = 1 to 8), because of the lighter mass of Ca. The resulting lower density is beneficial from a device manufacturing perspective where there is often a trade-off with the specific power per kilogram. The compounds crystallize in the Ca(14)AlSb(11) structure type. The Ca substitution contributes to systematic lengthening the Mn-Sb bond while shortening the Sb-Sb bond in the 3 atom linear unit with increasing amounts of Ca. Temperature dependent thermoelectric properties, Seebeck, electrical resistivity, and thermal conductivity were measured from room temperature to 1273 K. Substitution of Yb with Ca improves the Seebeck coefficient while decreasing the thermal conductivity, along with decreasing the carrier concentration in this p-type material resulting in an enhanced thermoelectric figure of merit, zT, compared to Yb(14)MnSb(11).

Single-crystalline samples of a new Zintl compound, Eu(3)Ga(2)P(4), have been synthesized by a Ga-flux method. Eu(3)Ga(2)P(4) is found to crystallize in a monoclinic unit cell, space group C2/c, isostructural to Ca(3)Al(2)As(4). The structure is composed of a pair of edge-shared GaP(4) tetrahedra, which link by corner-sharing to form Ga(2)P(4) two-dimensional layers, separated by Eu(2+) ions. Magnetic susceptibility showed a Curie-Weiss behavior with an effective magnetic moment consistent with the value for Eu(2+) magnetic ions. Below 15 K, ferromagnetic ordering was observed and the saturation magnetic moment was 6.6 μ(B). Electrical resistivity measurements on a single crystal showed semiconducting behavior. Resistivity in the temperature range between 280 and 300 K was fit by an activation model with an energy gap of 0.552(2) eV. The temperature dependence of the resistivity is better described by the variable-range-hopping model for a three-dimensional conductivity, suggesting that Eu-P bonds are involved in the conductivity. A large magnetoresistance, up to -30%, is observed with a magnetic field H = 2 T at T = 100 K, suggesting strong coupling of carriers with the Eu(2+) magnetic moment.

CaFe4As3 is a new intermetallic structure type that can be described as a framework comprising of FeAs4 tetrahedra. The structure has similarities to the 1-2-2 superconducting phase in that the Fe/As network is related to the ThCr2Si2 structure. In addition, this phase shows magnetic transitions associated with spin density waves. This phase was prepared from a Sn flux, and it has recently been reported that further expansion of this structure type via chemical substitution is limited. We have developed a solid-state synthesis route for the preparation of CaFe4As3 that involves reacting a stoichiometric combination of the constituent elements. The thermal stability of this material was investigated over the 298–1473 K temperature range. An initial investigation of the Sn grown CaFe4As3 crystals showed that residual Sn that was present on the surface of the crystals reacted with the crystals at temperatures above 1173 K to form new phases. A thermal stability study of Sn-free CaFe4As3 indicated that it decomposed to give CaFe2As2 and Fe2As. The thermal behavior of CaFe2As2 was also investigated and the data showed that it can also form CaFe4As3 at high temperatures. The solid-state synthesis route presented herein and additional solid solution studies may provide opportunities for the prepartion of materials with this structure type with improved electronic properties.

Phase stability of the type-I clathrate compound Ba_(8)Al_(x)Si_(46−x) and the thermoelectric property dependence on chemical composition are presented. Polycrystalline samples were prepared by argon arc melting and annealing. Results of powder X-ray diffraction and electron microprobe analysis show that the type-I structure is formed without framework deficiency for 8≤x≤15. Lattice constant a increases linearly with the increase of x. Thermoelectric properties were measured for x=12, 14 and 15. The Seebeck coefficients are negative, with the absolute values increasing with x. The highest figure of merit zT=0.24 was observed for x=15 at T=1000 K, with carrier electron density n=3×10^(21) cm^(−3). A theoretical calculation based on the single parabolic band model reveals the optimum carrier concentration to be n~4×10^(20) cm^(−3), where zT~0.7 at T=1000K is predicted.

The title compound was prepared as single crystals using an aluminum flux technique. Single crystal and powder X-ray diffraction indicate that this composition crystallizes in the clathrate type-I structure, space group Pm3n. Electron microprobe characterization indicates the composition to be Ba_(8−y)Sr_yAl_(14.2(2))Si_(31.8(2)) (0.77

Na4Si4 is a Zintl salt composed of Na+ cations and Si 4 4 − tetrahedral anions and is a unique solid-state precursor to clathrate structures and nanomaterials. In order to provide opportunities for the synthesis of complex materials, phosphorus was explored as a possible substituent for silicon. Phosphorus doped sodium silicides Na4Si4−xPx (x≤0.04) were prepared by reaction of Na with the mechanically alloyed Si4−x:Px (x=0.04, 0.08, 0.12) mixture in a sealed Nb tube at 650 °C for 3 days. Energy dispersive X-ray spectroscopy confirms the presence of P in all products. Powder X-ray diffraction patterns are consistent with the retention of the Na4Si4 crystal structure. As the amount of P increases, a new peak in the diffraction pattern that can be assigned to black phosphorus is apparent above the background. Raman and solid-state NMR provide information on phosphorus substitution in the Na4Si4 structure. Raman spectroscopy shows a shift of the most intense band assigned to the Si 4 4 − ν1 (A1) mode from 486.4 to 484.0 cm−1 with increasing P, consistent with P replacement of Si. Differential nuclear spin-lattice relaxation for the Si sites determined via 29Si solid-state NMR provides direct evidence for Si–P bonding in the (Si1−xPx)4− tetrahedron. The 23Na NMR shows additional Na…P interactions and the 31P NMR shows two P sites, consistent with P presence in both of the crystallographic sites in the (Si4)4− tetrahedron.

Ammonia borane (AB) is under significant investigation as a possible hydrogen storage material. While chemical additives have been shown to lower the temperature for hydrogen release from ammonia borane, many provide additional complications in the regeneration cycle. Mechanically alloyed hexagonal boron nitride (nano-BN) has been shown to facilitate the release of hydrogen from AB at lower temperature, with minimal induction time and less exothermicity, and inert nano-BN may be easily removed during any regeneration of the spent AB. The samples were prepared by mechanically alloying AB with nano-BN. Raman spectroscopy indicates that the AB/nano-BN samples are physical mixtures of AB and h-BN. The release of hydrogen from AB/nano-BN mixtures as well as the decomposition products was characterized by 11B magic angle spinning (MAS) solid state NMR spectroscopy, TGA/DSC/MS with 15N-labeled AB, and solution 11B NMR spectroscopy. The 11B MAS solid state NMR spectrum shows that diammoniate of diborane (DADB) is...

In thermoelectric materials, chemical substitutions are widely used to optimize thermoelectric properties. The Zintl phase compound, Yb14MgSb11, has been demonstrated as a promising thermoelectric material at high temperatures. It is iso-structural with Ca14AlSb11 with space group I41/acd. Its iso-structural analog, Ca14MgSb11, was discovered to be a semiconductor and have vacancies on the Sb(3) sites, although in its nominal composition it can be described as consisting of fourteen Ca2+ cations with one [MgSb4]9− tetrahedron, one Sb37− linear anion and four isolated Sb3− anions (Sb(3) site) in one formula unit. When Sn substitutes Sb in Ca14MgSb11, optimized Seebeck coefficient and resistivity were achieved simultaneously although the Sn amount is small (

A hydrogen-containing inorganic clathrate with the nominal composition, K(7)(H(2))(3)Si(46), has been prepared in 98% yield by the reaction of K(4)Si(4) with NH(4)Br. Rietveld refinement of the powder X-ray diffraction data is consistent with the clathrate type I structure. Elemental analysis and (1)H MAS NMR confirmed the presence of hydrogen in this material. Type I clathrate structure is built up from a Si framework with two types of cages where the guest species, in this case K and H(2), can reside: a large cage composed of 24 Si, in which the guest resides in the 6d position, and a smaller one composed of 20 Si, in which the guest occupies the 2a position (cubic space group Pm3n). Potassium occupancy was examined using spherical aberration (Cs) corrected scanning transmission electron microscopy (STEM). The high-angle annular dark-field (HAADF) STEM experimental and simulated images indicated that the K is deficient in both the 2a and the 6d sites. (1)H and (29)Si MAS NMR are consistent with the presence of H(2) in a restricted environment and the clathrate I structure, respectively. FTIR and (29)Si{(1)H} CP MAS NMR results show no evidence for a Si-H bond, suggesting that hydrogen is present as H(2) in interstitial sites. Thermal gravimetry (TG) mass spectrometry (MS) provide additional confirmation of H(2) with hydrogen loss at approximately 400 degrees C.

Single crystals of SrAl_2Si_2 were synthesized by reaction of the elements in an aluminum flux at 1000 °C. SrAl_2Si_2 is isostructural to CaAl2Si2 and crystallizes in the hexagonal space group P–3m1 (90 K, a=4.1834 (2), c=7.4104 (2) A, Z=1, R1=0.0156, wR2=0.0308). Thermal analysis shows that the compound melts at 1020 °C. Low-temperature resistivity on single crystals along the c-axis shows metallic behavior with room temperature resistivity value of 7.5 mΩ cm. High-temperature Seebeck, resistivity, and thermal conductivity measurements were made on hot-pressed pellets. The Seebeck coefficient shows negative values in entire temperature range decreasing from −78 μV K^(−1) at room temperature to −34 μV K^(−1) at 1173 K. Seebeck coefficients are negative indicating n-type behavior; however, the temperature dependence is consistent with contribution from minority p-type carriers as well. The lattice contribution to the thermal conductivity is higher than for clathrate structures containing Al and Si, approximately 50 mW cm^(−1) K, and contributes to the overall low zT for this compound.

Nanoscale hexagonal BN additive for ammonia borane, AB, is shown to decrease the onset temperature for hydrogen release. Both the nano-BN and the AB:nano-BN samples are prepared by ball milling. The materials are characterized by X-ray powder diffraction, 11B muclear magnetic resonance, thermogravimetric analysis, differential scanning calorimetry, and mass spectrometry, and the hydrogen release is measured by a volumetric gas burette system. Several effects of the mixtures of AB:nano-BN are shown to be beneficial in comparison with neat AB. These are the decrease of the dehydrogenation temperature, the decrease in NH3 formation, as well as the decrease of the exothermicity of hydrogen release with increasing the nano-BN concentration.

Large, high quality single crystals of a new Zintl phase, EuIn(2)As(2), have been synthesized from a reactive indium flux. EuIn(2)As(2) is isostructural to the recently reported phase EuIn(2)P(2), and it is only the second reported member of the group of compounds with formula AM(2)X(2) (A = alkali, alkaline earth, or rare earth cation; M = transition or post-transition metal; and X = Group 14 or 15 element) that crystallizes in the hexagonal space group P6(3)/mmc (a = 4.2067(3) A, c = 17.889(2) A and Z = 2). The structure type contains layers of A(2+) cations separated by [M(2)X(2)](2-) layers along the crystallographic c-axis. Crystals of the title compound were mounted for magnetic measurements, with the crystallographic c-axis oriented either parallel or perpendicular to the direction of the applied field. The collective magnetization versus temperature and field data indicate two magnetic exchange interactions near 16 K, one involving Eu(2+)...Eu(2+) intralayer coupling and the other involving Eu(2+)...Eu(2+) coupling between layers. EuIn(2)As(2) is metallic and magnetoresistive, as is the isostructural phosphide, and both compounds have coincident resistivity and magnetic ordering transitions, consistent with the observation of colossal magnetoresistance. Negative colossal magnetoresistance (MR = {[rho(H) - rho(0)]/rho(H)} x 100%) of up to -143% (at T = 17.5 K, H = 5 T) is observed for EuIn(2)As(2), approximately half of that observed for the more resistive phosphide, which has a higher magnetic ordering temperature and local moment coupling strength.

Single crystals of boron-doped Ba8Al14Si31 clathrate I phase were prepared using Al flux growth. The structure and elemental composition of the samples were characterized by single-crystal and powder X-ray diffraction; elemental analysis; and multinuclear (27)Al, (11)B, and (29)Si solid-state NMR. The samples' compositions of Ba8B0.17Al14Si31, Ba8B0.19Al15Si31, and Ba8B0.32Al14Si31 were consistent with the framework-deficient clathrate I structure Ba8Al(x)Si(42-3/4x)cube(4-1/4x) (x = 14, cube = lattice defect). Solid-state NMR provides further evidence for boron doped into the framework structure. Temperature-dependent resistivity indicates metallic behavior, and the negative Seebeck coefficient indicates that transport processes are dominated by electrons. Thermal conductivity is low, but not significantly lower than that observed in the undoped Ba8Al14Si31 prepared in the same manner.

High purity NaGe was directly prepared by a low-temperature reaction of NaH and Ge. The product was characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray (EDX) spectroscopy. This material is a useful starting reagent for the preparation of Ge nanoparticles. Hydrogen-terminated germanium (Ge) nanoparticles were prepared by reaction of NaGe with NH4Br. These Ge nanoparticles could be prepared as amorphous or crystalline nanoparticles in quantitative yields and with a narrow size distribution. The nanoparticles were functionalized via thermally initiated hydrogermylation with 1-eicosyne, CH3(CH2)17C≡CH to produce alkyl-terminated Ge nanoparticles. The modified Ge nanoparticles were characterized by powder XRD, transmission electron microscopy (TEM), Fourier transform infrared (FT-IR) and Raman spectroscopy, and photoluminescence (PL) spectroscopy. The alkyl-functionalized Ge nanoparticles can be expected to have promising applications in many technological and biological areas.

The feasibility of using silanization as a general tool to functionalize the surface of silicon nanoparticles (NPs) has been investigated in detail. Silicon NPs were prepared from reduction of silicon tetrachloride with sodium naphthalide. The terminal chloride on the surface of as-synthesized particles was substituted by methanol and water, in sequence. The particles were then silanized by octyltrichlorosilane, 11-bromoundecyltrichlorosilane, or 2-(carbomethoxy)ethyltrichlorosilane. These treatments yielded alkyl-, bromo-, or ester-termini on NP surfaces, respectively. The NPs were characterized by TEM, NMR, FTIR, UV–Vis, and PL spectroscopy. Changes of termination groups brought various functionalities to the NPs, without loss of the photophysics of the original NPs.

The antimony-121 Mössbauer spectra of the Yb14MnSb11 and Eu14MnSb11 Zintl compounds have been measured between 2 or 5 and 300 K. The resulting three-dimensional arrays of the spectral counts, velocity, and temperature have been simultaneously fit with a minimum number of free parameters. These fits yield a 0 Kelvin transferred hyperfine field of 2.9(2) T, a Curie temperature of 57(3) K, and a Mössbauer temperature of 182(2) K for Yb14MnSb11; in this case the transferred field arises solely from the ordering of Mn2+. Because Eu14MnSb11 has both Eu2+ and Mn2+ ions that are magnetically ordered, its antimony-121 Mössbauer spectra are more complex and reveal two magnetic transitions, the first at 92(1) K resulting from the ordering of the Mn2+ ions and the second at 9.5(1.0) K resulting from the ordering of the Eu2+ ions; the corresponding 0 Kelvin transferred hyperfine fields are 1.3(1) and 3.7(1) T. The antimony-121 isomer shifts yield electronic configurations of 5s1.745p4.28 and 5s1.745p4.19 for the average antimony anion in Yb14MnSb11 and Eu14MnSb11, respectively.

Zintl phase compounds with large unit cells and complex anionic structures such as Yb11Sb10 hold potential for being good thermoelectric materials. Single crystals of Ge-doped Yb11Sb10 were synthesized using a molten Sn-flux technique. Single crystal X-ray diffraction data were obtained and resulted in a composition of Yb11Sb9.3Ge0.5 which was verified by microprobe. Yb11Sb9.3Ge0.5 is isostructural to Ho11Ge10, crystallizing in a body-centered, tetragonal unit cell, space group I4/mmm, with Z = 4. The unit cell parameters of Yb11Sb9.3Ge0.5 are a = 11.8813(4), c = 17.1276(13) A with a volume of 2417.8(2) A3. These parameters correlate well with the structural refinement of previously published Yb11Sb10. The structure consists of 16 isolated Sb3− anions, 8 dumbbells, 2 square planar rings and 44 Yb2+ cations. The Ge, doped in at 28 % occupancy, was found to be site specific, residing on the 2 square planar rings. Single crystal X-ray diffraction is most consistent with the site that makes up the square ring being less than fully occupied. The doped compound is additionally characterized by X-ray powder diffraction, differential scanning calorimetry and thermogravimetry. High temperature (300–1200 K) thermoelectric properties show that the doped compound has extremely low thermal conductivity (10–30 mW/cmK), lower than that of Yb11Sb10. Temperature dependent resistivity is consistent with a heavily doped semiconductor. Yb11Sb9.3Ge0.5 shows p-type behavior increasing from ∼22 μV/K at room temperature to ∼31 μV/K at 1140 K. The low value and the temperature dependence of the Seebeck coefficient suggest that bipolar conduction produces a compensated Seebeck coefficient and consequently a low zT.

A molten Al flux method was used to grow single crystals of the type I clathrate compound Ba8Al14Si31. Single-crystal neutron diffraction data for Ba8Al14Si31 were collected at room temperature using the SCD instrument at the Intense Pulsed Neutron Source, Argonne National Laboratory. Single-crystal neutron diffraction of Ba8Al14Si31 confirms that the Al partially occupies all of the framework sites (R1 = 0.0435, wR2 = 0.0687). Stoichiometry was determined by electron microprobe analysis, density measurements, and neutron diffraction analysis. Solid-state (27)Al NMR provides additional evidence for site preferences within the framework. This phase is best described as a framework-deficient solid solution Ba8Al14Si31, with the general formula, Ba(8)Al(x)Si(42-3/4x)[](4-1/4x) ([] indicates lattice defects). DSC measurements and powder X-ray diffraction data indicate that this is a congruently melting phase at 1416 K. Temperature-dependent resistivity reveals metallic behavior. The negative Seebeck coefficient indicates transport processes dominated by electrons as carriers.

Mg3Sb2 has been prepared by direct reaction of the elements. Powder X-ray diffraction, thermal gravimetric, differential scanning calorimetery, and microprobe data were obtained on hot pressed samples. Single phase samples of Mg3Sb2 were prepared and found to contain oxygen at the grain boundaries and to lose Mg and oxidize at temperatures above 900 K. Thermoelectric properties were characterized by Seebeck, electrical resistivity, and thermal conductivity measurements from 300 to 1023 K, and the maximum zT was found to be 0.21 at ∼875 K.