1. InGaN/GaN core/shell nanowires for visible to ultraviolet range photodetection.
- Author
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Zhang, Hezhi, Messanvi, Agnès, Durand, Christophe, Eymery, Joël, Lavenus, Pierre, Babichev, Andrey, Julien, François H., and Tchernycheva, Maria
- Subjects
NANOCONTACTS ,NANOWIRE devices ,NANOWIRE optical sensors ,ELECTRIC wire ,QUANTUM electronics ,NANOSTRUCTURED materials ,NANOWIRES - Abstract
We report on the fabrication and characterization of single nitride nanowire visible-to-ultraviolet p-n photodetectors. Nitride nanowires containing 30 InGaN/GaN radial quantum wells with 18% indium fraction were grown by catalyst-free metal-organic vapour phase epitaxy. Single nanowires were contacted using optical lithography. As expected for a radial p-n junction, the current-voltage ( I- V) curves of single wire detectors show a rectifying behavior in the dark and a photocurrent under illumination. The detectors present a response in the visible to UV spectral range starting from 2.8 eV. The peak responsivity is 0.17 A/W at 3.36 eV. The on-off switching time under square light pulses is found to be below 0.1 s. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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