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High structural quality InGaN/GaN multiple quantum well solar cells.
- Source :
- Physica Status Solidi (C); Dec2015, Vol. 12 Issue 12, p1412-1415, 4p
- Publication Year :
- 2015
-
Abstract
- In this paper, we report on high structural quality of above 15% indium content InGaN/GaN multiple quantum well (MQW) structures with high equivalent thickness for solar cell applications. The structural and optical characterizations revealed fully strained 25 pairs of InGaN/GaN MQW solar cells with 24% indium content which shows extended spectral response up to 530 nm. In particular, defect density of the active region of In<subscript>0.15</subscript> Ga<subscript>0.85</subscript>N/GaN MQW solar cell has been assessed in top view electron beam induced current (EBIC) analysis. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626351
- Volume :
- 12
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Physica Status Solidi (C)
- Publication Type :
- Academic Journal
- Accession number :
- 111869309
- Full Text :
- https://doi.org/10.1002/pssc.201510137