Author: "Sobolev, M. M." / Topic: indium arsenide - Searchworks@Jio Institute Digital Library Search Results

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Start Over Author "Sobolev, M. M." Topic indium arsenide

Author: Sobolev, M. M., Cirlin, G. E., Samsonenko, Yu. B., Polyakov, N. K., and Tonkikh, A. A.
Subjects: *SPECTRUM analysis, *QUANTUM dots, *QUANTUM electronics, *SEMICONDUCTORS, *INDIUM arsenide, *GALLIUM arsenide
Abstract: Deep-level transient spectroscopy is used to study charge-carrier emission from the states of separate quantum dots in InAs/GaAs p–n heterostructures grown on (100)- and (311)A-oriented GaAs substrates in relation to the reverse-bias voltage U. It is established that the structures under consideration exhibit different bias-voltage dependences of the Stark shift for the energy levels of the quantum-dot states on the value of U. © 2005 Pleiades Publishing, Inc. [ABSTRACT FROM AUTHOR]
Published: 2005
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Author: Sobolev, M. M., Gadzhiev, I. M., Bakshaev, I. O., Nevedomskii, V. N., Buyalo, M. S., Zadiranov, Yu. M., and Zolotareva, R. V.
Subjects: *POLARIZATION (Nuclear physics), *ELECTROLUMINESCENCE, *ABSORPTION, *INDIUM arsenide, *GALLIUM arsenide, *QUANTUM dots, *ANISOTROPY, *WAVE functions
Abstract: The involvement of heavy-hole ground states in optical transitions for light polarized both in the plane perpendicular to the growth axis (x-y) and along the growth direction z of the structure has been observed in vertically correlated quantum dots (VCQDs). The degree of polarization anisotropy depends on the height of VCQDs, which is related to the z component of the wave function of heavy-hole ground states. [ABSTRACT FROM AUTHOR]
Published: 2013
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Author: Sobolev, M. M., Vasil'ev, A. P., Nevedomskii, V. N., Gadzhiev, I. M., Bakshaev, I. O., and Portnoi, E. L.
Subjects: *SUPERLATTICES, *QUANTUM dots, *WANNIER-stark effect, *INDIUM arsenide, *GALLIUM arsenide semiconductors, *QUANTUM tunneling, *ELECTRIC fields, *ABSORPTION spectra
Abstract: Wannier-Stark localization effect for miniband states has been observed in a 10-layer system of tunneling-coupled vertically correlated InAs/GaAs quantum dots (QDs) at different applied electric fields by using deep level transient and differential-absorption spectroscopies. [ABSTRACT FROM AUTHOR]
Published: 2011
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Author: Sobolev, M. M., Zhukov, A. E., Vasilev, A. P., Semenova, E. S., and Mikhrin, V. S.
Subjects: *QUANTUM dots, *DEEP level transient spectroscopy, *QUANTUM electronics, *INDIUM arsenide, *GALLIUM arsenide
Abstract: Deep level transient spectroscopy (DLTS) is used to study electron and hole emission from the states in the system of vertically correlated InAs quantum dots in the p-n InAs/GaAs heterostructures, in relation to the thickness of the GaAs spacer between two layers of InAs quantum dots and to the reverse bias voltage. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR]
Published: 2007
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