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Coupling of quantum states in InAs/GaAs quantum dot molecule.

Authors :
Sobolev, M. M.
Zhukov, A. E.
Vasilev, A. P.
Semenova, E. S.
Mikhrin, V. S.
Source :
AIP Conference Proceedings. 2007, Vol. 893 Issue 1, p787-788. 2p. 3 Graphs.
Publication Year :
2007

Abstract

Deep level transient spectroscopy (DLTS) is used to study electron and hole emission from the states in the system of vertically correlated InAs quantum dots in the p-n InAs/GaAs heterostructures, in relation to the thickness of the GaAs spacer between two layers of InAs quantum dots and to the reverse bias voltage. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
0094243X
Volume :
893
Issue :
1
Database :
Academic Search Index
Journal :
AIP Conference Proceedings
Publication Type :
Conference
Accession number :
24985789
Full Text :
https://doi.org/10.1063/1.2730126