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A low-capacitance silicon-controlled rectifier for high speed I/O pad protection is implemented with TSMC 7nm bulk FinFET technology. It can achieve much higher ESD robustness per capacitance with better dynamic on-resistance and faster turn-on speed for CDM protection as compared to the prior art.

A novel ESD dual diode with stronger latch-up robustness has been proposed in FinFET technology. By inserting PW/NW straps, the proposed ESD diode can be built without changing DC-IV and ESD characteristics of conventional ESD diode. The experimental and simulation results demonstrate that the proposed structure has been successfully verified in FinFET CMOS platform.

A FinFET SCR embedded ESD clamp for power supply protection with low leakage current is demonstrated. The proposed clamp is suitable for low power applications since it reduces ∼87% of leakage current per bigFET width and improves ESD robustness to ∼2X per footprint compared to the conventional RC-triggered clamp.