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Low-Capacitance SCR for On-Chip ESD Protection with High CDM Tolerance in 7nm Bulk FinFET Technology

Authors :
Ming-Hsiang Song
Yu-Ti Su
Ming-Fu Tsai
Jam-Wem Lee
Li-Wei Chu
Kuo-Ji Chen
Peng Po-Lin
Source :
2019 41st Annual EOS/ESD Symposium (EOS/ESD).
Publication Year :
2019
Publisher :
IEEE, 2019.

Abstract

A low-capacitance silicon-controlled rectifier for high speed I/O pad protection is implemented with TSMC 7nm bulk FinFET technology. It can achieve much higher ESD robustness per capacitance with better dynamic on-resistance and faster turn-on speed for CDM protection as compared to the prior art.

Details

Database :
OpenAIRE
Journal :
2019 41st Annual EOS/ESD Symposium (EOS/ESD)
Accession number :
edsair.doi...........f3e4231265301d0df1bf57e9e5cc1bc2
Full Text :
https://doi.org/10.23919/eos/esd.2019.8869982