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Gallium nitride nanowire and nanorod substrates are prospective platforms allowing to control the local strain distribution in graphene films on top of them, resulting in an induction of pseudomagnetic fields. AFM measurements performed in a HybriD mode complemented by SEM allow for a detailed visualization of the strain distribution on graphene surface. Graphene in direct contact with supporting regions is tensile strained, while graphene located in-between is characterized by lower strain. Characteristic tensile strained wrinkles also appear in the areas between the supporting regions. A positive correlation between strain gradient and distances between borders of supporting regions is observed. These results are confirmed by analysis of the Raman D’ band intensity, which is affected by an enhancement of intravalley scattering. Furthermore, scanning tunneling spectroscopy shows a local modification of the density of states near the graphene wrinkle and weak localization measurements indicate the enhancement of pseudomagnetic field-induced scattering. Therefore, we show that nanowire and nanorod substrates provide strain engineering and induction of pseudomagnetic fields in graphene. The control of graphene morphology by modification of distances between supporting regions is promising for both further fundamental research and the exploration of innovative ways to fabricate pseudomagnetic field-based devices like sensors or filters.

In this report we investigate structural and electrical properties of epitaxial Chemical Vapor Deposition quasi-free-standing graphene on an unintentionally-doped homoepitaxial layer grown on a conducting 4H–SiC substrate 4° off-axis from the basal [0001] direction towards [11-20]. Due to high density of SiC vicinal surfaces the deposited graphene is densely stepped and gains unique characteristics. Its morphology is studied with atomic force and scanning electron microscopy. Its few-layer character and p-type conductance are deduced from a Raman map and its layers structure determined from a high-resolution X-ray diffraction pattern. Transport properties of the graphene are estimated through Hall effect measurements between 100 and 350 K. The results reveal an unusually low sheet resistance below 100 Ω/sq and high hole concentration of the order of 1015 cm−2. We find that the material's electrical properties resemble those of an epitaxially-grown SiC PIN diode, making it an attractive platform for the semiconductor devices technology.

In this report, we demonstrate a novel high-temperature Hall effect sensor that is based on quasi-free-standing monolayer graphene epitaxially grown on high-purity semiinsulating (SI) on-axis 4H-SiC(0001) substrate in a chemical vapor deposition process. To ensure statistical perspective, characteristics of 23 elements are determined as a function of temperature ranging from 300 to 770 K. Passivated with a 100-nm-thick atomic-layer-deposited aluminum oxide, the sensor offers current-mode sensitivity of 80 V/AT with thermal stability of −0.02%/K within the range between 300 and 573 K, and −0.06%/K between 573 and 770 K. The sensor’s room-temperature output voltage is monitored in the magnetic field from −300 to +300 mT and its offset voltage at 0 T is assessed. Its high-temperature electrical properties are explained through a double-carrier transport involving spontaneous-polarization-induced holes in the graphene layer and thermally activated electrons emitted from a deep acceptor level related to silicon vacancy $\text{V}_{\textsf {Si}}^{\textsf {1-/2-}}$ occupying the ${k}$ site of the 4H-SiC lattice. The sensor is compared with a previously reported one on vanadium-compensated SI on-axis 6H-SiC(0001). The new sensor’s applicability to magnetic field detection at high temperatures is verified.

By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An observed Raman G band position shift larger than 8.5 cm-1 corresponds to an increase in carrier concentration of about 1.2x10^13 cm-2. The presence of a distinct G band splitting together with a narrow symmetric 2D band indicates turbostratic layer stacking and suggests the presence of a high potential gradient near the Schottky junction even at zero bias. The subbands characterized by the highest Raman energies correspond to the largest concentration of electrons. An analysis based on electroreflectance measurements and a modified Richardson equation confirmed that graphene on n-GaN separated by an undoped GaN spacer behaves like a capacitor at reverse bias. At least 60% of G subband position shifts occur at forward bias, which is related to a rapid reduction of electric field near the Schottky junction. Raman micromapping shows a high uniformity of gating efficiency on the surface. Therefore, our studies demonstrate the usefulness of few layer turbostratic graphene deposited on GaN for tracing electron-phonon coupling in graphene. Multilayer graphene also provides uniform and stable electric contacts. Moreover, the observed bias sensitive G band splitting can be used as an indicator of charge transfer in sensor applications in the low bias regime.

We present a graphene-based holmium-doped fiber laser incorporating a Martinez-style compressor which enables precise and continuous dispersion control of the cavity. Solitonic operation of the laser for a wide range of net cavity dispersion values is achieved without significantly altering the repetition frequency. The compressor also provides the possibility to introduce additional spectral filtering - stable mode-locking operation in the 2049- 2093 nm wavelength span is presented.

The surface-enhanced Raman scattering in graphene deposited on AlxGa1−xN/GaN axial heterostructure nanowires was investigated. It was found that the intensity of graphene Raman spectra is not correlated with aluminium content. Analysis of graphene Raman band parameters, Kelvin probe force microscopy, and electroreflectance showed a screening of polarisation charges. Theoretical calculations demonstrated that plasmon resonance in graphene is far beyond the Raman spectral range. This excludes the presence of an electromagnetic mechanism of surface-enhanced Raman scattering, hence suggesting a chemical mechanism of enhancement.

In this report we demonstrate the results of charge carriers transport studies in graphene using a Hall effect sensor fabricated on quasi-free-standing monolayer graphene grown on a semi-insulating on-axis vanadium-compensated 6H-SiC(0001) substrate in an epitaxial Chemical Vapor Deposition process. The sensor is passivated with aluminum oxide through atomic layer deposition and offers current-mode sensitivity of 140 V/AT with thermal stability of − 0.02%/K within the range between 80 and 573 K. The electrical properties of the graphene layer are determined as a function of temperature ranging from 300 to 770 K. High-temperature characteristics of passivated and not passivated graphene are compared and their profiles explained through a double-carrier transport involving the spontaneous-polarization-induced holes in the graphene layer and the thermally activated electrons from a shallow donor level of nitrogen in the quasi-cubic (k1) site and a deep acceptor level of vanadium in the hexagonal (h) site both present in the bulk of the vanadium-compensated SiC substrate. Finally, we conclude that this mechanism is directly responsible for the limitation of the thermal stability of the sensor's current-mode sensitivity.

For a better comprehension of hydrogen intercalation of graphene grown on a silicon carbide substrate, an advanced analytical technique is required. We report that with a carefully established measurement procedure it is possible to obtain a reliable and reproducible depth profile of bi-layer graphene (theoretical thickness of 0.69 nm) grown on the silicon carbide substrate by the Chemical Vapor Deposition method. Furthermore, we show that with depth resolution as good as 0.2 nm/decade, both hydrogen coming from the intercalation process and organic contamination can be precisely localized. As expected, hydrogen was found at the interface between graphene and the SiC substrate, while organic contamination was accumulated on the surface of graphene and did not penetrate into it. Such a precise measurement may prove to be invaluable for further characterization of 2D materials.