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Bottom gate, top contact thin‐film transistors (TFTs) with transparent Sn‐doped zinc oxide as the active layer have been fabricated on glass substrate at room temperature. Indium tin oxide, alumni zinc oxide (AZO) and Al thin films serve as the source/drain (S/D) electrode. It turns out that devices with AZO S/D electrodes exhibit preferable properties such as a saturation mobility of 13.6 cm2/Vs, a subthreshold slope of 381 mV/decade, a Vth of 3.47 V and an on/off current ratio of 3.1 × 107. Moreover, the superior output characteristic and lower parasitic resistance demonstrate the excellent contact performance of the tin‐zinc oxide TFTs with AZO S/D electrodes. [ABSTRACT FROM AUTHOR]

In this reported work, high‐performance fully transparent bottom‐gate‐type calcium‐doped zinc oxide thin‐film transistors (Ca–ZnO TFTs) have been successfully fabricated on glass substrate. The effects of substrate temperature during active layer deposition on the electrical properties of Ca–ZnO TFTs were investigated and an optimum condition (substrate temperature: 100°C) was achieved. The optimised thin‐film transistors (TFTs) exhibit excellent electrical properties, with an off‐state current (Ioff) of 1.31 × 10−12 A, an Ion/Ioff current ratio of 3.015 × 108, a saturation mobility (μsat) of 25 cm2/Vs and a threshold voltage (Vt) of 4.24 V. The variation trend of Vt, the Ion/Ioff current ratio and μsat against substrate temperatures is analysed in detail. The experimental results suggest that the performance of Ca–ZnO TFTs can be improved effectively by optimum substrate temperature. [ABSTRACT FROM AUTHOR]

Fully transparent tin‐doped zinc oxide thin‐film transistors (TZO TFTs) were successfully fabricated on glass substrate by radio‐frequency sputtering at room temperature. In this reported work, TZO is adopted as the channel layer, SiO2 as the gate insulator and indium tin oxide as gate and source/drain electrodes. The surface morphology and crystallographic structure of the TZO films were evaluated by scanning electron microscopy and X‐ray diffraction, respectively. Sn atoms are found to successfully replace Zn sites in the lattice and form stable Sn–O bonds. Sn dopants and adding O2 during the TZO channel deposition can enhance the device performance. The as‐fabricated TZO TFT exhibited excellent electrical and optical properties. Hence, TZO can be a promising candidate for the next generation driving active‐matrix flat panel displays. [ABSTRACT FROM AUTHOR]

High‐performance full transparent bottom‐gate type tin‐doped zinc oxide thin‐film transistors (TZO TFTs) had been successfully fabricated by RF magnetron sputtering on glass substrates at low temperatures. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated and an optimised growing condition (O2/Ar gas flow ratio: 8/92) for TZO film as the channel layer was acheived. Excellent device performance was obtained, with a low off‐state current (Ioff) of 10−12 A, a high on/off current ratio of 5 × 107, a high saturation mobility (μs) of 57 cm2/Vs, a steep subthreshold slope of 0.507 V/decade and a threshold voltage (Vth) of 3.5 V. These results highlight that excellent device performance can be realised in TZO film and TZO TFT is a promising candidate for transparent flat panel display. [ABSTRACT FROM AUTHOR]

High‐performance fully transparent bottom‐gate type dual‐layer (ITO/TZO) channel thin‐film transistors (ITO/TZO TFTs) have been successfully fabricated on a glass substrate at low temperature (below 100°C). The results show that dual‐layer channel (ITO/TZO) TFTs, compared to the single channel TZO TFTs and ITO TFTs, exhibit better electrical properties, with a low Ioff of 1.5 × 10−11 A, a high on/off ratio of 5.78 × 107, a high saturation mobility μs of 292 cm2/V·s, a high linear mobility μl of 105.4 cm2/V·s, a steep subthreshold swing of 0.33 V/decade and a threshold voltage Vth of 3.16 V. The results show that excellent device performance can be realised in ITO/TZO TFTs. [ABSTRACT FROM AUTHOR]