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High‐performance full transparent tin‐doped zinc oxide thin‐film transistors fabricated on glass at low temperatures.
- Source :
- Electronics Letters (Wiley-Blackwell); Sep2014, Vol. 50 Issue 19, p1463-1465, 3p
- Publication Year :
- 2014
-
Abstract
- High‐performance full transparent bottom‐gate type tin‐doped zinc oxide thin‐film transistors (TZO TFTs) had been successfully fabricated by RF magnetron sputtering on glass substrates at low temperatures. The effect of O2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated and an optimised growing condition (O2/Ar gas flow ratio: 8/92) for TZO film as the channel layer was acheived. Excellent device performance was obtained, with a low off‐state current (Ioff) of 10−12 A, a high on/off current ratio of 5 × 107, a high saturation mobility (μs) of 57 cm2/Vs, a steep subthreshold slope of 0.507 V/decade and a threshold voltage (Vth) of 3.5 V. These results highlight that excellent device performance can be realised in TZO film and TZO TFT is a promising candidate for transparent flat panel display. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 50
- Issue :
- 19
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Wiley-Blackwell)
- Publication Type :
- Academic Journal
- Accession number :
- 148781478
- Full Text :
- https://doi.org/10.1049/el.2014.2887