1. Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs.
- Author
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Rony, M. W., Zhang, En Xia, Toguchi, Shintaro, Luo, Xuyi, Reaz, Mahmud, Li, Kan, Linten, Dimitri, Mitard, Jerome, Reed, Robert A., Fleetwood, Daniel M., and Schrimpf, Ronald D.
- Subjects
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STRAY currents , *NANOWIRES , *HIGH voltages , *LOGIC circuits , *GALLIUM arsenide - Abstract
Negative-bias-stress and total-ionizing-dose (TID) effects in deeply scaled Ge-gate-all-around (GAA) nanowire (NW) devices are characterized for different biasing conditions. Negative-bias-stress-induced degradation in Ge GAA device originates primarily from the interface- and border-trap generation. Devices stressed at high gate voltage show rapid initial degradation and quick saturation dominated by interface-trap generation. Radiation-induced OFF-state leakage current in Ge GAA NWs increases with dose due to enhanced band-to-band tunneling (BTBT) caused by charge trapping in the shallow trench isolation (STI). [ABSTRACT FROM AUTHOR]
- Published
- 2022
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