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The impact of polarization-induced electric fields on the coherent electron tunneling probability in AlN/GaN coupled double quantum wells (CDQWs) is examined by solving Schrodinger and Poisson equations. The coherent electron tunneling probability has decreased with the increased in the polarization-induced electric fields, which is attributed to the resonance between the [E.sub.2] and [E.sub.3] subbands weakening with the polarization-induced electric fields increasing in AlN/GaN CDQWs.

An AlN/GaN/InGaN/GaN double-heterojunction high electron mobility transistor (DH-HEMT) structure with a thin AlN barrier layer is described and the performance of the DH-HEMT device is examined by using two-dimensional numerical simulation. The results have shown that the ultrathin AlN barrier layer has reduced thermal impedance, has lowered the self-heating effect and the passivation layer has a major role in the self-heating effect of the ultrathin barrier DH-HEMTs.

A two-dimensional numerical simulation is employed to study the intrinsic mechanisms of drain lag and current collapse in GaN-based high-electron-mobility transistors. The results revealed that better electron localization that could reduce the current collapse is possible by considering quantum-well high-electron-mobility transistors.

The results of self-heating simulations of the GaN-based metal-oxide-semiconductor high electron-mobility transistors (MOS-HEMTs), including hot electron and quantum effects are reported using two-dimensional numerical simulator. Results reveal that the presence of the interface charges and traps are directly responsible for the observed current collapse and device switching in the GaN-based MOS-HEMTs.