The role of ultrathin AlN barrier in the reduction in the hot electron and self-heating effects for GaN-based double-heterojunction high electron mobility transistors

An AlN/GaN/InGaN/GaN double-heterojunction high electron mobility transistor (DH-HEMT) structure with a thin AlN barrier layer is described and the performance of the DH-HEMT device is examined by using two-dimensional numerical simulation. The results have shown that the ultrathin AlN barrier layer has reduced thermal impedance, has lowered the self-heating effect and the passivation layer has a major role in the self-heating effect of the ultrathin barrier DH-HEMTs.