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1. X-ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor-phase epitaxy.

Author

Liu, Q., Lindner, A., Scheffer, F., Prost, W., and Tegude, F. J.

Subjects
*INDIUM compounds, *GALLIUM arsenide
Abstract

Studies the use of high resolution x-ray diffraction thin indium arsenide and gallium arsenide layers grown on InP substrates by low-pressure metalorganic vapor-phase epitaxy. Growth parameter and structural parameter of the investigated samples; Superlattice periods determined from the observed satellites separations; Enlargement of an experimental rocking curve of sample IX in the vicinity of the zeroth-order peak.

Published
1994
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