X-ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor-phase epitaxy.

Studies the use of high resolution x-ray diffraction thin indium arsenide and gallium arsenide layers grown on InP substrates by low-pressure metalorganic vapor-phase epitaxy. Growth parameter and structural parameter of the investigated samples; Superlattice periods determined from the observed satellites separations; Enlargement of an experimental rocking curve of sample IX in the vicinity of the zeroth-order peak.