Search

Single-photon entanglement is a peculiar type of entanglement in which two or more degrees of freedom of a single photon are correlated quantum-mechanically. Here, we demonstrate a photonic integrated chip (PIC) able to generate and manipulate single-photon path-entangled states, using a commercial red LED as light source. A Bell test, in the Clauser, Horne, Shimony and Holt (CHSH) form, is performed to confirm the presence of entanglement, resulting in a maximum value of the CHSH correlation parameter equal to $2.605 \pm 0.004$. This allows us to use it as an integrated semi-device independent quantum random number generator able to produce certified random numbers. The certification scheme is based on a Bell's inequality violation and on a partial characterization of the experimental setup, without the need of introducing any further assumptions either on the input state or on the particular form of the measurement observables. In the end a min-entropy of $33\%$ is demonstrated., 22 pages, 8 figures

In this paper, we demonstrate strip-loaded guiding optical components realized on a 27 nm ultra-thin SOI platform. The absence of physically etched boundaries within the guiding core suppresses majorly the scattering loss, as shown by us previously for a silicon nitride (Si$_3$N$_4$) platform [Stefan \textit{et. al.}, OL 40, 3316 (2015)]. Unexpectedly, the freshly fabricated Si devices showed large losses of 5 dB/cm, originating from absorption by free carriers, accumulated under the positively charged Si$_3$N$_4$ loading layer. We use 254 nm ultraviolet (UV) light exposures to neutralize progressively and permanently silicon nitride's bulk charge associated with diamagnetic K+defects. This in turn leads to a net decrease of electron concentration in the SOI layer, reducing thus the propagation loss down to 0.9 dB/cm. Detailed MOS-capacitance measurements on test samples were performed to monitor the UV-induced modification of the electronic properties of the system. The evolution of loss mitigation was directly monitored both by Beer-Lambert approach in waveguide transmission experiments, as well as through more accurate cavity linewidth measurements. In the last case, we demonstrate how intrinsic cavity $Q$'s boost from 60,0000 to up to 500,000 after UV treatment. Our results may open routes towards engineering of new functionalities in photonic devices employing UV-modification of space charges and associated local electric fields, unveil the origin of induced optical nonlinearities in Si$_3$N$_4$/Si micro-photonic systems, as well as envisage possible integration of these with ultra-thin SOI electronics., Comment: 8 pages, 5 figures

In this chapter, first we will address principal aspects of 1D quasiperiodicity with a particular focus on 1D Fibonacci chains. Further, the rest of the chapter will be dedicated to the electromagnetic counterpart of 1D Fibonacci structures as a relatively simplest case of the large class of photonic quasicrystals., Comment: 16 pages, 17 figures, from "Light Localisation and Lasing", Eds. M. Ghulinyan, L. Pavesi, Cambridge Univ. Press (2015) Ch. 5, p. 99

In this paper we report on the measurement and modelling of enhanced optical refractometric sensors based on whispering-gallery-modes. The devices under test are optical microresonators made of silicon nitride on silicon oxide. In our approach, these microresonators are vertically coupled to a buried waveguide with the aim of creating integrated and cost-effective devices. The optimization analysis is a delicate balance of resonance quality factor and evanescent field overlap with the sorrounding environment to analyze. By numerical simulations we show that the microdisk thickness is critical to yield high figure of merit for the sensor, while edge inclination is less important. We also show that figures of merit as high as 1600/RIU are feasible., 10 pages