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We utilize the inverse proximity effect in superconductor-ferromagnet bilayer to generate lateral Josephson junctions. The weak link is created by a ferromagnetic NiFe strip across a superconductor Nb bridge due to the inverse proximity effect. The critical currents of the junctions were measured at different temperatures and magnetic fields. The junctions exhibit a modulation of the critical current in perpendicular magnetic field similar to a Fraunhofer interference pattern which proves the dc Josephson effect. The weak link region induced by the NiFe in Nb persists down to 2 K. [ABSTRACT FROM PUBLISHER]

Self-assembled In1-xMnxAs quantum dots (0.19≤=x≤=0.45) have been grown on GaAs (100) substrates by low-temperature molecular beam epitaxy. The microstructure analysis revealed that the uniformly distributed In1-xMnxAs dots have a zinc blende structure as x≤=0.38. Furthermore, all samples exhibit ferromagnetic state at 5 K, and their Curie temperatures range from 260 to 340 K varying with x. These (In, Mn)As quantum dots are promising for room-temperature spintronic devices [ABSTRACT FROM AUTHOR]

An atomically flat and uniform reaction layer of Mn(Ga)As was found to self-organize at the (Ga,Mn)As/IrMn interface by postannealing. The Mn(Ga)As layer exhibits strong ferromagnetic characteristics up to the measured 300 K. In particular, the manifested horizontal shift of field-cooled hysteresis loops shows a clear signature of exchange bias attributable to the exchange coupling between IrMn and Mn(Ga)As. Implication from composition analyses, exchange-bias effect, and thickness dependence of the Mn(Ga)As layer versus annealing conditions is also discussed. [ABSTRACT FROM AUTHOR]

The effects of low-temperature (210 °C-290 °C) annealing on the microstructure, lattice constant, and magnetic properties of (In0.52Al0.48)0.91Mn0.09As grown by low-temperature molecular-beam epitaxy were studied. The results show that low-temperature annealing has little influence on the crystalline structure and interface quality of (In0.52Al0.48)0.91Mn0.09As epilayer. In contrast, both the lattice constant and Curie temperature of (In0.52Al0.48)0.91Mn0.09As are found to be strongly dependent on the annealing temperature. The lattice constant linearly decreases with increasing annealing temperature; while the Curie temperature increases with increasing annealing temperature up to 250 °C, and then abruptly decreases upon further annealed at 270 °C and 290 °C. [ABSTRACT FROM AUTHOR]