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Enhancement of exchange coupling between GaMnAs and IrMn with self-organized Mn(Ga)As at the interface.
- Source :
- Applied Physics Letters; 12/25/2006, Vol. 89 Issue 26, p262502, 3p, 1 Black and White Photograph, 1 Chart, 3 Graphs
- Publication Year :
- 2006
-
Abstract
- An atomically flat and uniform reaction layer of Mn(Ga)As was found to self-organize at the (Ga,Mn)As/IrMn interface by postannealing. The Mn(Ga)As layer exhibits strong ferromagnetic characteristics up to the measured 300 K. In particular, the manifested horizontal shift of field-cooled hysteresis loops shows a clear signature of exchange bias attributable to the exchange coupling between IrMn and Mn(Ga)As. Implication from composition analyses, exchange-bias effect, and thickness dependence of the Mn(Ga)As layer versus annealing conditions is also discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 89
- Issue :
- 26
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 23624387
- Full Text :
- https://doi.org/10.1063/1.2410234