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The development of two-dimensional (2D) magnetic semiconductors with room-temperature ferromagnetism is a significant challenge in materials science and is important for the development of next-generation spintronic devices. Herein, we demonstrate that a 2D semiconducting antiferromagnetic Cu-MOF can be endowed with intrinsic room-temperature ferromagnetic coupling using a ligand cleavage strategy to regulate the inner magnetic interaction within the Cu dimers. Using the element-selective X-ray magnetic circular dichroism (XMCD) technique, we provide unambiguous evidence for intrinsic ferromagnetism. Exhaustive structural characterizations confirm that the change of magnetic coupling is caused by the increased distance between Cu atoms within a Cu dimer. Theoretical calculations reveal that the ferromagnetic coupling is enhanced with the increased Cu-Cu distance, which depresses the hybridization between 3d orbitals of nearest Cu atoms. Our work provides an effective avenue to design and fabricate MOF-based semiconducting room-temperature ferromagnetic materials and promotes their practical applications in next-generation spintronic devices. Two-dimensional magnetic materials present a promising platform for spintronic devices; however, these are predominantly either insulting, or metallic. Here, Feng et al demonstrate a semiconducting two-dimensional metal-organic framework with intrinsic ferromagnetism. [ABSTRACT FROM AUTHOR]

Single‐atom‐layer catalysts with fully activated basal‐atoms will provide a solution to the low loading‐density bottleneck of single‐atom catalysts. Herein, we activate the majority of the basal sites of monolayer MoS2, by doping Co ions to induce long‐range ferromagnetic order. This strategy, as revealed by in situ synchrotron radiation microscopic infrared spectroscopy and electrochemical measurements, could activate more than 50 % of the originally inert basal‐plane S atoms in the ferromagnetic monolayer for the hydrogen evolution reaction (HER). Consequently, on a single monolayer of ferromagnetic MoS2 measured by on‐chip micro‐cell, a current density of 10 mA cm−2 could be achieved at the overpotential of 137 mV, corresponding to a mass activity of 28, 571 Ag−1, which is two orders of magnitude higher than the multilayer counterpart. Its exchange current density of 75 μA cm−2 also surpasses most other MoS2‐based catalysts. Experimental results and theoretical calculations show the activation of basal plane S atoms arises from an increase of electronic density around the Fermi level, promoting the H adsorption ability of basal‐plane S atoms. [ABSTRACT FROM AUTHOR]

Graphene is extremely promising for next-generation spintronics applications; however, realizing graphene-based room-temperature magnets remains a great challenge. Here, we demonstrate that robust room-temperature ferromagnetism with TC up to ∼400 K and saturation magnetization of 0.11 emu g−1 (300 K) can be achieved in graphene by embedding isolated Co atoms with the aid of coordinated N atoms. Extensive structural characterizations show that square-planar Co-N4 moieties were formed in the graphene lattices, where atomically dispersed Co atoms provide local magnetic moments. Detailed electronic structure calculations reveal that the hybridization between the d electrons of Co atoms and delocalized pz electrons of N/C atoms enhances the conduction-electron mediated long-range magnetic coupling. This work provides an effective means to induce room-temperature ferromagnetism in graphene and may open possibilities for developing graphene-based spintronics devices. Graphene has shown incredible promise as ideal material for numerous fields; however its use in spintronics has been hampered by the lack of intrinsic magnetism. Here, Hu et al succeed in embedding Cobalt in the graphene lattice, creating robust room-temperature ferromagnetism. [ABSTRACT FROM AUTHOR]