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Transient implantable piezoelectric materials are desirable for biosensing, drug delivery, tissue regeneration, and antimicrobial and tumor therapy. For use in the human body, they must show flexibility, biocompatibility, and biodegradability. These requirements are challenging for conventional inorganic piezoelectric oxides and piezoelectric polymers. We discovered high piezoelectricity in a molecular crystal HOCH2(CF2)3CH2OH [2,2,3,3,4,4-hexafluoropentane-1,5-diol (HFPD)] with a large piezoelectric coefficient d33 of ~138 picocoulombs per newton and piezoelectric voltage constant g33 of ~2450 × 10−3 volt-meters per newton under no poling conditions, which also exhibits good biocompatibility toward biological cells and desirable biodegradation and biosafety in physiological environments. HFPD can be composite with polyvinyl alcohol to form flexible piezoelectric films with a d33 of 34.3 picocoulombs per newton. Our material demonstrates the ability for molecular crystals to have attractive piezoelectric properties and should be of interest for applications in transient implantable electromechanical devices. [ABSTRACT FROM AUTHOR]

Organosilicons have been used extensively in aerospace, electronics, food, medicine and other fields, due to their low viscosity, hydrophobicity, corrosion resistance, non‐toxic, and physiologically inert features. Despite extensive interest, however, organosilicon ferroelectric crystals have never been found. Here, by using the chemical design strategy, we successfully obtained a molecular ferroelectric D‐chiro‐inositol‐SiMe3 with polar P43 symmetry, whose spontaneous polarization can be electrically switchable on thin film. The introduction of organosilicon groups endows the thin films with excellent softness, ductility and flexibility (extremely low hardness of 72.8 MPa and small elastic modulus of 5.04 GPa) that are desirable for biomedical and human‐compatible applications. As the first case of organosilicon ferroelectric crystal to date, this work offers a new structural paradigm for molecular ferroelectrics, and highlights their potential for flexible bio‐electronic applications. [ABSTRACT FROM AUTHOR]

Shape memory alloys have been used extensively in actuators, couplings, medical guide wires, and smart devices, because of their unique shape memory effect and superelasticity triggered by the reversible martensitic phase transformations. For ferroic materials, however, almost no memory effects have been found for their ferroic domains after reversible phase transformations. Here, we present a pair of single-component organic enantiomorphic ferroelectric/ferroelastic crystals, (R)- and (S)-N-3,5-di-tert-butylsalicylidene-1-(1-naphthyl)ethylamine SA-NPh-(R) and SA-NPh-(S). It is notable that not only can their ferroic domain patterns disappear and reappear during reversible thermodynamic phase transformations, but they can also disappear and reappear during reversible light-driven phase transformations induced by enol–keto photoisomerization, both of which are from P1 to P21 polar space groups. Most importantly, the domain patterns are exactly the same in the initial and final states, demonstrating the existence of a memory effect for the ferroic domains in SA-NPh-(R) and SA-NPh-(S). As far as we are aware, the domain memory effect triggered by both thermodynamic and light-driven ferroelectric/ferroelastic phase transformations remains unexplored in ferroic materials. Thermal and optical control of domain memory effect would open up a fresh research field for smart ferroic materials. Memory effect is seldom found in ferroic domains after reversible phase transformations. Here, the authors develop a pair of single-component organic enantiomorphic multiferroic crystals with erasable ferroelectric and ferroelastic domains. [ABSTRACT FROM AUTHOR]

With prosperity, decay, and another spring, molecular ferroelectrics have passed a hundred years since Valasek first discovered ferroelectricity in the molecular compound Rochelle salt. Recently, the proposal of ferroelectrochemistry has injected new vigor into this century-old research field. It should be highlighted that piezoresponse force microscopy (PFM) technique, as a non-destructive imaging and manipulation method for ferroelectric domains at the nanoscale, can significantly speed up the design rate of molecular ferroelectrics as well as enhance the ferroelectric and piezoelectric performances relying on domain engineering. Herein, we provide a brief review of the contribution of the PFM technique toward assisting the design and performance optimization of molecular ferroelectrics. Relying on the relationship between ferroelectric domains and crystallography, together with other physical characteristics such as domain switching and piezoelectricity, we believe that the PFM technique can be effectively applied to assist the design of high-performance molecular ferroelectrics equipped with multifunctionality, and thereby facilitate their practical utilization in optics, electronics, magnetics, thermotics, and mechanics among others. [ABSTRACT FROM AUTHOR]

100 years have passed since the initiate of ferroelectrics, molecular ferroelectrics with homochirality. Although inorganic ceramics have gained widespread utilization, especially in electronic, optical, and energy harvesting devices, the development of a molecular ferroelectric is still in its infancy because of the difficulty in finding a new one, let alone controllably optimizing its performance. It is noteworthy that some recently developed chemical design approaches, including the ideas of quasi-spherical theory, introducing homochirality, and H/F substitution, significantly contribute to the chemical design as well as performance optimization of a wide range of molecular ferroelectrics. This, in fact, changes the way of discovering a new molecular ferroelectric from blind search into targeted design. In this Perspective, we lay out three key strategies for chemical design and performance optimization of molecular ferroelectrics, which are the vital components for ferroelectrochemistry and provide fresh insights into how to design a new molecular ferroelectric relying on the established methodology. This, undoubtedly, opens the floodgate in the development of molecular ferroelectrics, especially for their academic and commercial desire. We wish to briefly exhibit our systematical studies on the targeted design and performance optimization of molecular ferroelectrics and set off the trend of targeted design in the next 100 years for ferroelectrics. [ABSTRACT FROM AUTHOR]

Molecular ferroelectrics have attracted considerable interests because of their easy and environmentally friendly processing, low acoustical impedance and mechanical flexibility. Herein, a molecular thermochromic ferroelectric, N,N′‐dimethyl‐1,4‐diazoniabicyclo[2.2.2]octonium tetrachlorocuprate(II) ([DMe‐DABCO]CuCl4) is reported, which shows both excellent ferroelectricity and intriguing thermochromism. [DMe‐DABCO]CuCl4 undergoes a ferroelectric phase transition from Pca21 to Pbcm at a significantly high Curie temperature of 413 K, accompanied by a color change from yellow to red that is due to the remarkable deformation of [CuCl4]2− tetrahedron, where the ferroelectric and paraelectric phases correspond to yellow and red, respectively. Combined with multiple bistable physical properties, [DMe‐DABCO]CuCl4 would be a promising candidate for next‐generation smart devices, and should inspire further exploration of multifunctional molecular ferroelectrics. [ABSTRACT FROM AUTHOR]

Since the first perovskite CaTiO3 was discovered in 1839, the development of perovskite has a history of 180 years. The emergence of solar cells (CH3NH3)PbI3 has set off the trend of hybrid organic–inorganic perovskite (HOIP) materials. Since then, various HOIPs have sprung up and been widely used in various material devices. Among them, HOIP ferroelectrics have gained widespread attention. However, antiperovskite, as a twin brother of perovskite, has been neglected although it has similar structure with perovskite. Here, we successfully found that [C3H7FN]3[SnCl6]Cl has a three‐dimensional (3D) antiperovskite structure with the formula M3AB. Importantly, the compound exhibits obvious ferroelectric properties with an Aizu notation of 622F6 at 391 K. To the best of our knowledge, this is the first 3D hybrid organic–inorganic antiperovskite ferroelectric, which will greatly promote the development of antiperovskite families with more superior physical properties. [ABSTRACT FROM AUTHOR]

Inorganic perovskite ferroelectrics are widely used in nonvolatile memory elements, capacitors, and sensors because of their excellent ferroelectric and other properties. Organic ferroelectrics are desirable for their mechanical flexibility, low weight, environmentally friendly processing, and low processing temperatures. Although almost a century has passed since the first ferroelectric, Rochelle salt, was discovered, examples of highly desirable organic perovskite ferroelectrics are lacking. We found a family of metal-free organic perovskite ferroelectrics with the characteristic three-dimensional structure, among which MDABCO (N-methyl-N’-diazabicyclo[2.2.2]octonium)Ðammonium triiodide has a spontaneous polarization of 22 microcoulombs per square centimeter [close to that of barium titanate (BTO)], a high phase transition temperature of 448 kelvins (above that of BTO), and eight possible polarization directions. These attributes make it attractive for use in flexible devices, soft robotics, biomedical devices, and other applications. [ABSTRACT FROM AUTHOR]

Narrow band gaps and excellent ferroelectricity are intrinsically paradoxical in ferroelectrics as the leakage current caused by an increase in the number of thermally excited carriers will lead to a deterioration of ferroelectricity. A new molecular ferroelectric, hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5), was now developed through band gap engineering of organic-inorganic hybrid materials. It features an intrinsic band gap of 1.89 eV, and thus represents the first molecular ferroelectric with a band gap of less than 2.0 eV. Simultaneously, low-temperature solution processing was successfully applied to fabricate high-quality ferroelectric thin films based on HDA-BiI5, for which high-precision controllable domain flips were realized. Owing to its narrow band gap and excellent ferroelectricity, HDA-BiI5 can be considered as a milestone in the exploitation of molecular ferroelectrics, with promising applications in high-density data storage and photovoltaic conversion. [ABSTRACT FROM AUTHOR]

Ferroelectrics are inseparable from symmetry breaking. Accompanying the paraelectric-to-ferroelectric phase transition, the paraelectric phase adopting one of the 32 crystallographic point groups is broken into subgroups belonging to one of the 10 ferroelectric point groups, i.e. C1, C2, C1h, C2v, C4, C4v, C3, C3v, C6 and C6v. The symmetry breaking is captured by the order parameter known as spontaneous polarization, whose switching under an external electric field results in a typical ferroelectric hysteresis loop. In addition, the responses of spontaneous polarization to other external excitations are related to a number of physical effects such as second-harmonic generation, piezoelectricity, pyroelectricity and dielectric properties. Based on these, this review summarizes recent developments in molecular ferroelectrics since 2011 and focuses on the relationship between symmetry breaking and ferroelectricity, offering ideas for exploring high-performance molecular ferroelectrics. [ABSTRACT FROM AUTHOR]