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The Narrowest Band Gap Ever Observed in Molecular Ferroelectrics: Hexane-1,6-diammonium Pentaiodobismuth(III).
- Source :
- Angewandte Chemie; 1/8/2018, Vol. 130 Issue 2, p535-539, 5p
- Publication Year :
- 2018
-
Abstract
- Narrow band gaps and excellent ferroelectricity are intrinsically paradoxical in ferroelectrics as the leakage current caused by an increase in the number of thermally excited carriers will lead to a deterioration of ferroelectricity. A new molecular ferroelectric, hexane-1,6-diammonium pentaiodobismuth (HDA-BiI<subscript>5</subscript>), was now developed through band gap engineering of organic-inorganic hybrid materials. It features an intrinsic band gap of 1.89 eV, and thus represents the first molecular ferroelectric with a band gap of less than 2.0 eV. Simultaneously, low-temperature solution processing was successfully applied to fabricate high-quality ferroelectric thin films based on HDA-BiI<subscript>5</subscript>, for which high-precision controllable domain flips were realized. Owing to its narrow band gap and excellent ferroelectricity, HDA-BiI<subscript>5</subscript> can be considered as a milestone in the exploitation of molecular ferroelectrics, with promising applications in high-density data storage and photovoltaic conversion. [ABSTRACT FROM AUTHOR]
- Subjects :
- FERROELECTRIC crystals
ENERGY bands
HEXANE
BISMUTH
THERMAL analysis
Subjects
Details
- Language :
- English
- ISSN :
- 00448249
- Volume :
- 130
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Angewandte Chemie
- Publication Type :
- Academic Journal
- Accession number :
- 127192082
- Full Text :
- https://doi.org/10.1002/ange.201709588