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An approach of direct bonding of SiC wafers of differing polytypes has been implemented in order to create a template for cubic 3C-SiC homo epitaxy. Hetero epitaxial 3C-SiC layers grown by chemical vapor deposition were transferred onto a hexagonal 6H-SiC wafer. The results of structural characterization showed that the quality of 3C-SiC sublimation epitaxy on the templates is comparable to the level of epitaxy of cubic silicon carbide by chemical vapor deposition method. It was confirmed that the 3C-SiC layer transferred onto the 6H-SiC substrate plays the role of a crystalline "seed" that determines cubic polytype of the overgrown SiC layer. [ABSTRACT FROM AUTHOR]

Heavily doped 3C-SiC films based on semi-insulating 6H-SiC substrates were obtained by sublimation epitaxy. The structural perfection of the obtained samples was monitored by X-ray diffractometry. The measurements of the photoluminescence and Hall effect spectra have confirmed the rather high perfection of the obtained epitaxial layers. [ABSTRACT FROM AUTHOR]

Epitaxial films grown by low-temperature liquid phase epitaxy on p-type 4H-SiC were used as strongly doped subcontact layers for making low-resistance contacts to the p-type material. The layers had a bulk resistivity of ∼0.02 Ω · cm and an aluminum atom concentration of ∼1.5 × 10[sup 20] cm[sup -3]. The absence of polytype inclusions and the distinct crystalline quality of the strongly doped subcontact layers was confirmed by x-ray diffraction methods. Ohmic contacts with resistivities less than 10[sup -4] Ω · cm² were prepared by depositing and then annealing multilayer metal mixtures containing Al and Ti. The structural properties and energy characteristics of the resulting ohmic contacts are discussed. [ABSTRACT FROM AUTHOR]

Electrical characteristics of Cr/Au and Ti/Au metal contacts on epitaxial graphene on 4H-SiC showed significant variations in resistance parameters at 300 K. These parameters decreased substantially as the temperature increased to 673 K. The work function, binding energy, and diffusion energy of the deposited metals were used to explain these observed variations. The quantitative analysis of our data demonstrates that non-reactive metals with higher work functions result in lower contact resistance, which can be further decreased by 70% using appropriate annealing. These results provide important information when considering epitaxial graphene for high temperature applications. [ABSTRACT FROM AUTHOR]

The structure of (p)3C-SiC-(n)6H-SiC epitaxial structures obtained by sublimation epitaxy in vacuum on 6H-SiC substrates was studied by methods of X-ray topography, X-ray diffraction, and transmission electron microscopy. The results showed high structure perfection in the epitaxial layers of both SiC polytypes with a sharp interface between the 3C-SiC and 6H-SiC layers. [ABSTRACT FROM AUTHOR]

Nearly isoperiodic solitary Ga[sub 1-x]In[sub x]As[sub y]Sb[sub 1-y]/GaSb heterostructures, in which the composition of the solid solution should be found inside the region of spinodal decay (x ≤ 0.4), were grown by liquid-phase epitaxy from solution-melts enriched with antimony. On the basis of the results of a study of structural and luminescence properties of Ga[sub 1-x]In[sub x]As[sub y]Sb[sub 1-y]/GaSb heterostructures we have determined the main conditions ensuring reproducible growth of epitaxial layers, homogeneous in the composition of their solid solutions in the region where the existence of processes of spinodal and binodal decay have been theoretically predicted. It is shown that the magnitude and sign of the deformation which the layer undergoes during growth and also the thickness of the layer are the main factors influencing the properties of the growing GalnAsSb solid solutions in the spinodal-decay zone. [ABSTRACT FROM AUTHOR]