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In this study, the ungated AlGaN/GaN devices with special mesa structures were designed. The hypothesis of effective width expansion was tested experimentally by using ungated samples with different sizes, and an empirical expression for calculating the conduction channel effective width was given according to the experimental results. Finally, split-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths were prepared, and the channel electron mobility of split-gate samples was calculated by using the empirical expression and polarization Coulomb field (PCF) scattering theoretical model. The results showed that, for split-gate AlGaN/GaN HFETs, with the increase in the gate length, the total amount of additional polarization charges underneath the gate increases, resulting in the enhancement of the PCF scattering intensity. [ABSTRACT FROM AUTHOR]

In this study, a novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology was fabricated. Sample transistors of different structures and sizes were constructed. Through measurements, it was found that by changing the width of the opening, the threshold voltage of the device could be easily modulated across a larger range. The open-gate device had two working modes with different transconductance. When the gate-source voltage VGS ≤ − 4.5 V, only the open region was conductive, and a new working mechanism modulated the channel current. Corresponding theoretical analysis and calculations showed that its saturation mechanism was related to a virtual gate formed by electron injection onto the surface. Also, the gate-source voltage modulated the open channel current by changing the channel electron mobility through polarization Coulomb field scattering. When used as class-A voltage amplifiers, open-gate devices can achieve effective voltage amplification with very low power consumption. [ABSTRACT FROM AUTHOR]

E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) of various sizes were fabricated, and their parasitic source resistance (RS) was measured. The measurement results showed that RS varied greatly with changing gate bias, and the degree of RS change also differed with the gate bias of different-sized device samples. Through theoretical analysis, it is found that polarization Coulomb field (PCF) scattering caused by the device process and gate bias can affect electron mobility ( μ GS ) in the gate-source region, which causes the variations in μ GS for different-sized devices and same-sized devices under different gate biases. When μ GS changes with the device size and gate bias, the RS will change accordingly. Our study is the first to discover the gate bias dependency of RS for E-mode P-GaN/AlGaN/GaN HFETs due to PCF scattering, which provides a new idea for further in-depth studies on the RS of E-mode P-GaN/AlGaN/GaN HFETs and device performance optimization. [ABSTRACT FROM AUTHOR]

• Normally-off recessed gate AlGaN/GaN MIS-HEMTs with ALD-Al 2 O 3 gate dielectric stack was fabricated. • The effect mechanism of PCF scattering on electrical properties of normally-off recessed gate AlGaN/GaN MIS-HEMTs was studied and clarified. • For the region underneath the gate, the increase in V GS resulted in an increase in Δ ρ G and n 2 D E G , moreover, the effect of n 2 D E G for PCF scattering is more significant than Δ ρ G. • For the gate-source region and gate-drain region, the parasitic resistance changes with V GS owing to the effect of PCF scattering, moreover, the effect of PCF scattering on the R S _ C H is stronger than R D _ C H . • This study perfects the carrier transport model of normally-off recessed gate AlGaN/GaN MIS-HEMTs and provides a new theoretical foundation for the device of this type to improving the electron mobility and reducing parasitic resistance. In this study, normally-off recessed gate AlGaN/GaN MIS-HEMT with ALD-Al 2 O 3 gate dielectric stack was fabricated. The influence of polarization Coulomb field (PCF) scattering on electrical properties of normally-off recessed gate AlGaN/GaN MIS-HEMTs with ALD-Al 2 O 3 gate dielectric stack was studied. Based on the measured I-V data, the electrical parameters such as additional polarization charge (Δ ρ G), electron mobility (μ), gate-source (G-S) parasitic resistance (R S) and gate-drain (G-D) parasitic resistance (R D) were obtained by iterative calculation method. Through systematic analyzed of these results, it was found that the positive G-S voltage (V GS) induces tensile strain in the ultra-thin AlGaN barrier layer, which was AlGaN remaining after etching and existsed between the gate dielectric and the GaN channel, resulting in positive Δ ρ G under the gate. With the increase of V GS , the inverse piezoelectric effect in the ultra-thin AlGaN layer increases and the amount of Δ ρ G increases. At the same time, the positive V GS induces two-dimensional electron gas (2DEG) underneath the gate, which is also positively correlated with the V GS. Compared with Δ ρ G , the 2DEG density (n 2 D E G ) has a greater effect on the PCF scattering strength. We also found that the influence of PCF scattering on R S and R D is different, which is related to the difference between G-S distance and G-D distance. This study provides a new theoretical basis for normally-off recessed gate AlGaN/GaN MIS-HEMTs to improving μ and reducing parasitic resistance. [ABSTRACT FROM AUTHOR]

Identically-sized AlGaN/GaN HFETs were fabricated on three AlGaN/GaN heterostructure with differing AlGaN barrier layer thicknesses of 15.5 nm, 19.3 nm and 24.7 nm. Based on polarization Coulomb field (PCF) scattering theory, additional polarization charges and electron mobility under the gate were calculated, and the relationship between AlGaN barrier layer thickness and P C F scattering in AlGaN/GaN H F E T s was determined. For the AlGaN/GaN H F E T s with a thicker AlGaN barrier layer, when the same gate bias was applied to the gate, the inverse piezoelectric effect (IPE) of the barrier layer was weaker, resulting in fewer additional polarization charges. The AlGaN/GaN H F E T s with a thicker AlGaN barrier layer also possessed a higher 2DEG sheet charge density, diminishing the P C F scattering intensity. It can be concluded that increasing the AlGaN barrier layer thickness reduces the IPE and raises the 2DEG sheet charge density, both of which decreases the PCF scattering intensity. The results of this study have guiding value toward the optimization of AlGaN/GaN HFETs materials and structures. • The relationship between AlGaN barrier layer thickness and polarization Coulomb field (PCF) scattering was determined. • Both of the reduce of additional polarization charges and the increase of the 2DEG density will weaken the PCF scattering. • PCF scattering intensity can be diminished by increasing the AlGaN barrier layer thickness. • The results of this study have guiding value toward the optimization of AlGaN/GaN HFETs materials and structures. [ABSTRACT FROM AUTHOR]

The AlGaN/GaN heterostructure field-effect transistors (HFETs) with the same size were fabricated on two AlGaN/GaN heterojunction materials with different Al composition. Based on the polarization Coulomb field (PCF) scattering theory model, the additional polarization charges and electron mobility are calculated. By analyzing the results, it is found that the increase of the Al composition in barrier layer will result in the increase of the additional polarization charges and the channel 2DEG density. Although HFETs with a higher Al composition in barrier layer have higher additional polarization charges, because of the higher density of 2DEG, the additional polarization charge has a weaker scattering effect on 2DEG, and the intensity of the PCF scattering is weaker. The contribution of additional polarization charges and 2DEG density to PCF scattering is opposite. The intensity of PCF scattering increases or decreases with the increase of Al composition, depending on which influence of the additional polarization charges and the 2DEG density is dominant.. • The influence mechanism of Al composition in AlGaN barrier layer on PCF scattering in AlGaN/GaN HFET has been clarified. • The increase of Al composition will result in the increase of the additional polarization charges and the 2DEG density. • The contribution of the additional polarization charges and 2DEG density to PCF scattering is opposite. • The PCF scattering increases or decreases with the increase of Al composition, depending on which above factors is dominant. [ABSTRACT FROM AUTHOR]

A physics-based model for the output current–voltage (I–V) characteristics of AlGaN/GaN HFETs is developed based on AlGaAs/GaAs HFETs. It is demonstrated that Polarization Coulomb Field (PCF) scattering greatly influences channel electron mobility. With different gate biases, channel electron mobility is varied by PCF scattering. Furthermore, a more negative gate bias and a lower ratio of l g / l s d (gate length/source-drain space) of the device causes the PCF scattering to have stronger influence on channel electron mobility. This work is the first to apply PCF scattering to a physics-based model for AlGaN/GaN HFETs with I–V characteristics and the results indicate that PCF scattering is essential for a physics-based model to identify I–V characteristics of AlGaN/GaN HFETs. [ABSTRACT FROM AUTHOR]