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Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics.
- Source :
- Electronics (2079-9292); Oct2020, Vol. 9 Issue 10, p1719-1719, 1p
- Publication Year :
- 2020
-
Abstract
- A physics-based model for the output current–voltage (I–V) characteristics of AlGaN/GaN HFETs is developed based on AlGaAs/GaAs HFETs. It is demonstrated that Polarization Coulomb Field (PCF) scattering greatly influences channel electron mobility. With different gate biases, channel electron mobility is varied by PCF scattering. Furthermore, a more negative gate bias and a lower ratio of l g / l s d (gate length/source-drain space) of the device causes the PCF scattering to have stronger influence on channel electron mobility. This work is the first to apply PCF scattering to a physics-based model for AlGaN/GaN HFETs with I–V characteristics and the results indicate that PCF scattering is essential for a physics-based model to identify I–V characteristics of AlGaN/GaN HFETs. [ABSTRACT FROM AUTHOR]
- Subjects :
- ELECTRON mobility
CHARGE carrier mobility
AUDITING standards
Subjects
Details
- Language :
- English
- ISSN :
- 20799292
- Volume :
- 9
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Electronics (2079-9292)
- Publication Type :
- Academic Journal
- Accession number :
- 146661481
- Full Text :
- https://doi.org/10.3390/electronics9101719