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Start Over Author "Hayes, D. G." Topic electron mobility
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1. On the Temperature and Carrier Density Dependence of Electron Saturation Velocity in an AlGaN/GaN HEMT.

Author

Oxley, C. H., Uren, M. J., Coates, A., and Hayes, D. G.

Subjects
ELECTRON distribution, MODULATION-doped field-effect transistors, SEMICONDUCTORS, TRANSISTORS, ELECTRON mobility, TEMPERATURE
Abstract

The temperature and carrier density dependence of electron intrinsic saturation velocity (vsi) in a 0.3-μm gate length AlGaN/GaN HEMT was extracted from multibias S-parameter measurements. It was found that vsi fell rapidly with increasing sheet carrier concentration (ne), but was only a very weak function of ambient temperature (Tamb). This behavior is consistent with the hot-phonon model of carrier transport. [ABSTRACT FROM AUTHOR]

Published
2006
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