On the Temperature and Carrier Density Dependence of Electron Saturation Velocity in an AlGaN/GaN HEMT.

The temperature and carrier density dependence of electron intrinsic saturation velocity (v_si) in a 0.3-μm gate length AlGaN/GaN HEMT was extracted from multibias S-parameter measurements. It was found that v_si fell rapidly with increasing sheet carrier concentration (n_e), but was only a very weak function of ambient temperature (T_amb). This behavior is consistent with the hot-phonon model of carrier transport. [ABSTRACT FROM AUTHOR]