Search

Near infrared light-emitting diode (LED) based on p-NiO/n-InN/n-GaN was realized by plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (rf) magnetron sputtering. The device exhibited diode-like rectifying current–voltage characteristics with a turn-on voltage of 1.0 V. Under forward bias, prominent near infrared (NIR) emissions were observed at peak around 1570 nm at room temperature. The NIR emission was ascribed to the band-edge emission of InN epilayer based on the photoluminescence spectrum and band diagram of the heterojunction. Moreover, the study of the LED in terms of the stability was also discussed. [ABSTRACT FROM AUTHOR]

The n-InN/p-NiO/GaN heterojunction was fabricated by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency magnetron sputtering. The device exhibited typical rectification characteristic with a turn-on voltage of ~1.5 V. Under forward bias, a dominant near infrared emission (NIR) peaked around 1565 nm was detected at room temperature. The NIR emission was attributed to the band-edge emission of InN film according to the photoluminescence spectrum of InN layer. Furthermore, the mechanism of the current transport and light emission was tentatively discussed in terms of the band diagrams of the heterojunction. [ABSTRACT FROM AUTHOR]

We fabricated the light-emitting diodes (LEDs) consisting of n-InN/p-NiO/p-Si heterostructure by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (RF) magnetron sputtering. The device exhibited diode-like rectifying current–voltage characteristics and had a turn-on voltage of 2.0 V. Under forward bias, a prominent narrow near infrared (NIR) emission peaked around 1565 nm was observed at room temperature. The NIR emission was demonstrated to come from the band-edge emission of InN layer. Moreover, the study of the LED in terms of the stability and efficiency were also discussed in detail. [ABSTRACT FROM AUTHOR]

We fabricated the light-emitting diodes (LEDs) consisting of n-ZnO/p-NiO/p-Si heterostructure by using metal-organic chemical vapor deposition (MOCVD) combined with radio frequency (RF) magnetron sputtering. The devices exhibited diode-like rectifying current–voltage characteristics and had a turn-on voltage of 6.8 V. Under forward bias, a prominent broad emission peaked around 400–650 nm was observed at room temperature. The asymmetric electroluminescence (EL) spectra were consisted of two apparent bands, which located at 420 and 495 nm corresponding to the violet and green luminescence, respectively. Furthermore, the mechanism of the light emission was tentatively discussed in terms of the band diagrams of the heterojunction. [ABSTRACT FROM AUTHOR]

An n-InN nanodots/p-Si(1 1 1) heterojunction diode was fabricated by plasma-assisted molecular beam epitaxy. The device shows clear rectifying behaviour with a turn-on voltage of approximately 1.2 V at room temperature. The near-infrared electroluminescence (EL) can be observed under forward bias, which covers a wide wavelength range. In comparison with the photoluminescence spectra, the maximum of the EL spectra has a blueshift which is probably due to the size quantization effect of small-sized InN nanodots and their stronger contribution to the EL intensity. On the other hand, there is an obvious enhancement of the less dominant transitions on the short wavelength side of the EL spectra, which may arise from the recombination of the injected holes with the extremely high-density surface electrons of InN nanodots. [ABSTRACT FROM AUTHOR]