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In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ~20meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ~–75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators. [ABSTRACT FROM AUTHOR]

The authors investigate the circular polarization of the electro- and photoluminescence emissions from the quantum well and contact layers of a nonmagnetic GaAs–AlAs p-i-n resonant tunneling diode under an external magnetic field. The contact emission evidences the formation of a spin polarized two-dimensional electron gas at the n-accumulation layer. The quantum well electroluminescence presents a strong σ- degree of polarization, even for null Zeeman splitting energies, and a slight bias dependence. The observed circular polarization is mainly attributed to the spin polarization of the electrons injected into the quantum well from the two-dimensional electron gas. [ABSTRACT FROM AUTHOR]