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Near infrared light-emitting diode (LED) based on p-NiO/n-InN/n-GaN was realized by plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (rf) magnetron sputtering. The device exhibited diode-like rectifying current–voltage characteristics with a turn-on voltage of 1.0 V. Under forward bias, prominent near infrared (NIR) emissions were observed at peak around 1570 nm at room temperature. The NIR emission was ascribed to the band-edge emission of InN epilayer based on the photoluminescence spectrum and band diagram of the heterojunction. Moreover, the study of the LED in terms of the stability was also discussed. [ABSTRACT FROM AUTHOR]

We fabricated the light-emitting diodes (LEDs) consisting of n-InN/p-NiO/p-Si heterostructure by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (RF) magnetron sputtering. The device exhibited diode-like rectifying current–voltage characteristics and had a turn-on voltage of 2.0 V. Under forward bias, a prominent narrow near infrared (NIR) emission peaked around 1565 nm was observed at room temperature. The NIR emission was demonstrated to come from the band-edge emission of InN layer. Moreover, the study of the LED in terms of the stability and efficiency were also discussed in detail. [ABSTRACT FROM AUTHOR]