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This document is a corrections statement for an article titled "The Role of the Bottom Oxide Layer in Oxide-Metal-Oxide (OMO) Electrode for Stretchable Organic Light-Emitting Diodes." The corrections address errors in Figure 3, the chemical shifts mentioned in Figure 4 3(f), a sentence regarding the photoelectronic spectrum, a publishing error in the figure caption of Figure 3, an error in a sentence about the resistance of the M5M electrode, the inclusion of a research project in the acknowledgements, and errors in Supporting Figures S3 and S4. The corrections provide the accurate information and updated versions of the figures. The article was authored by Chang Min Lee, Yeong Beom Kim, Subrata Sarker, Dong Hyun Kim, Tae Wook Kim, Syed Hamad Ullah Shah, Hyun Woo Cho, Tae-Sung Bae, Seung Min Yu, Yong-Cheol Kang, Sangmin Han, Periyanayagam Justin Jesuraj, Keum-Jin Ko, Myungkwan Song, Chang-Su Kim, and Seung Yoon Ryu. [Extracted from the article]

The challenges for stretchable organic light‐emitting diodes (SOLEDs) have led research into advanced manufacturing processes. Several electrodes have been researched to replace conventional indium tin oxide in SOLEDs due to its brittleness, indium scarcity in earth, and poor deformation capabilities. Oxide–metal–oxide (OMO) electrodes are promising alternatives for flexible/stretchable electronics owing their excellent charge injection and optical transparencies, including mechanical compliance. In this study, two oxides (i.e., MoO3 and V2O5) with different surface energies in an OMO structure to effectively inhibit the island growth of the ultra‐thin Au (5 nm) metal is incorporated. The morphology and interfacial coordinate covalent bonds between the seed layer and ultra‐thin Au film are extensively studied. The improved ultra‐thin Au growth in OMO structure together with figure‐of‐merit have been employed as the anode for a phosphorescent SOLED structure. The SOLEDs with OMO electrode under V2O5 as bottom oxide remain stable after peeling‐off and sustain a >50% uniaxial strain with a negligible reduction in luminance and current efficiencies. The surface energy and interface of the bottom oxide in the OMO structure are crucial for thin metals to attain superior optical, structural, electronic, and mechanical stability in SOLEDs. [ABSTRACT FROM AUTHOR]

Abstract: Hierarchical surface morphologies form when thin films are deposited onto preexisting templates of vertically aligned wires using a line-of-sight deposition method, providing a facile path to experimental battery electrodes with high surface-to-volume ratios. To demonstrate this, we fabricate and electrochemically cycle highly textured thin film electrodes of Li x Mn2−y O4 with large surface-to-volume ratios and low impedance. The active surface area of the electrodes exceeds the area of the substrate by at least a factor of five. This factor is due in part to the textured template, and in part to the effects of local shadowing during line-of-sight film deposition, resulting in a hierarchical surface morphology. The textured electrodes maintain their structural integrity for at least 30 cycles, as shown through microstructural characterization and reversible cycling against metallic lithium over the range of 2.0–4.4V. In comparison to planar thin film electrodes of equal mass, they also offer a lasting reduction in internal impedance. Overall, textured thin film electrodes of any material are readily fabricated through this templating technique and can be used to improve three-dimensional battery architectures or to simply probe electrochemical surface effects. [Copyright &y& Elsevier]

Single-crystalline SnO2 nanowires were directly grown on an amorphous WOx thin film, leading to the formation of nano-scale contacts with a near-Ohmic conductance. The WOx facilitated the diffusion of SnO2 on the surface of the WOx thin film, and SnO2 nanowires could be uniformly grown from the diffused SnO2. The contact properties between the metallic WOx and a semiconducting SnO2 nanowire were examined. The resistivity of the WOx–SnO2 nanowire contact was found to be approximately 2.6 × 10−5 Ω cm2. This was comparable to the resistivity of a contact between an Al electrode and a SnO2 nanowire with a contact area. A fabricated SnO2 nanowire transistor exhibited an on-current of approximately 386 nA, a threshold voltage of approximately 3.8 V, a subthreshold slope of approximately 0.26 V/dec and a field-effect mobility of approximately 43 cm2 V−1 s−1. [ABSTRACT FROM AUTHOR]

Abstract Metal nanostructure arrays have been progressed as an alternative to the conventional oxides-based transparent conductive electrodes. Herein, we demonstrate the improved reliability of silver nanowire (AgNW) electrodes by photoresist encapsulation. The incorporation of photoresist followed by photolithography is beneficial to selectively pattern the AgNWs on poly[ether sulfone]. By varying the development or removal time of the ultraviolet (UV)-exposed photoresist, the properties of the AgNWs in the electrode are significantly varied. The optical parameters such as transmittance, haziness, and the yellow index of the electrodes have been extensively studied to reveal the advantage of the selective photoresist patterning. The AgNW electrodes patterned under 120 s of development time explored superior optical and electrical properties with high durability. The electrical properties of the AgNW electrodes at high temperatures (250 °C) demonstrate the photoresist-induced stability as compared to bare samples. Further, the morphological examination after the high temperature treatment reveals the reduced Rayleigh instability effects in 120 s developed AgNWs that facilitate the reliability under harsh conditions. Graphical abstract Unlabelled Image Highlights • Selective passivation of AgNWs electrode achieved with a photoresist. • Haze/yellow index variation of AgNW electrode with various developing time revealed. • AgNW passivated with 120 s developing time show high reliability until 250 °C. • Selective passivation of AgNWs suppressed thermally induced Rayleigh instability. [ABSTRACT FROM AUTHOR]