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Improved stability of silver nanowire (AgNW) electrode for high temperature applications using selective photoresist passivation.

Authors :
Lee, Jong Chan
Min, Jeongho
Justin Jesuraj, P.
Hafeez, Hassan
Kim, Dong Hyun
Lee, Won Ho
Choi, Dae Keun
Cha, Jun Hwan
Lee, Chang Min
Song, Myungkwan
Kim, Chang Su
Ryu, Seung Yoon
Source :
Microelectronic Engineering. Feb2019, Vol. 206, p6-11. 6p.
Publication Year :
2019

Abstract

Abstract Metal nanostructure arrays have been progressed as an alternative to the conventional oxides-based transparent conductive electrodes. Herein, we demonstrate the improved reliability of silver nanowire (AgNW) electrodes by photoresist encapsulation. The incorporation of photoresist followed by photolithography is beneficial to selectively pattern the AgNWs on poly[ether sulfone]. By varying the development or removal time of the ultraviolet (UV)-exposed photoresist, the properties of the AgNWs in the electrode are significantly varied. The optical parameters such as transmittance, haziness, and the yellow index of the electrodes have been extensively studied to reveal the advantage of the selective photoresist patterning. The AgNW electrodes patterned under 120 s of development time explored superior optical and electrical properties with high durability. The electrical properties of the AgNW electrodes at high temperatures (250 °C) demonstrate the photoresist-induced stability as compared to bare samples. Further, the morphological examination after the high temperature treatment reveals the reduced Rayleigh instability effects in 120 s developed AgNWs that facilitate the reliability under harsh conditions. Graphical abstract Unlabelled Image Highlights • Selective passivation of AgNWs electrode achieved with a photoresist. • Haze/yellow index variation of AgNW electrode with various developing time revealed. • AgNW passivated with 120 s developing time show high reliability until 250 °C. • Selective passivation of AgNWs suppressed thermally induced Rayleigh instability. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
01679317
Volume :
206
Database :
Academic Search Index
Journal :
Microelectronic Engineering
Publication Type :
Academic Journal
Accession number :
134297076
Full Text :
https://doi.org/10.1016/j.mee.2018.12.001