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Zirconium oxide (zirconia) powder has been synthesized by co-precipitation method. The structural characterization of prepared sample was obtained by X-ray diffraction and showed monoclinic phase. Further surface morphology was confirmed by scanning electron microscopy (SEM). The frequency dependence of dielectric constant, dielectric loss, and impedance of the sample was investigated at room temperature. The obtained results partially motivated for alternative silicon based on devices. [ABSTRACT FROM AUTHOR]

Abstract: Nickel oxide (NiO) thin films were prepared on glass substrates at various bias voltages using dc reactive magnetron sputtering technique. The influence of substrate bias voltage on structural, optical and electrical properties was systematically investigated using X-ray diffraction (XRD), SEM, EDS, spectrophotometer and Hall effect studies. The NiO films are crystalline with preferential growth along (200) plane. The NiO films exhibit optical transmittance of 55% and direct band gap of 3.78eV at the substrate bias voltage of −75V. The electrical resistivity decreases as substrate bias voltage increases from 0 to −75V thereafter it was slightly increased. [ABSTRACT FROM AUTHOR]

Abstract: Cadmium indate films were deposited by dc reactive magnetron sputtering onto glass substrates in an oxygen partial pressure of 5×10−4 mbar and at various substrate temperatures in the range 373–673 K. The influence of substrate temperature on the structural, electrical and optical properties of the films was systematically studied. The films formed at substrate temperatures <423 K were amorphous while those deposited at ≥423 K were polycrystalline with cubic spinel structure. The decrease of electrical resistivity and increase of Hall mobility with the increase of substrate temperature were due to the improvement in the crystallinity of the films. The temperature dependence of Hall mobility measurements indicated that the grain boundary scattering of charge carriers was predominant in the films. The films formed at a substrate temperature of 673 K exhibited an electrical resistivity of 3.5×10−4 Ω cm, Hall mobility of 29 cm2 V−1 s−1, optical transmittance of 88%, optical band gap of 3.28 eV and figure of merit of 5×10−2 Ω−1. [Copyright &y& Elsevier]

Ni-Cu-Zn ferrite materials have been extensively used in multilayer chip inductors because of their remarkable properties at higher frequencies. In the present work, single phase Ni0.35Cu0.05Zn0.60Fe1.98O4-δ ferrite, has been prepared by microwave sintered (MS) method. In comparison with the conventional sintering method (CS), the sintering temperature and time for this MS method were significantly reduced to 30 min and 950°C from 5 h and 1250°C for the CS process. The frequency dependence of the dielectric properties such as dielectric constant (ε'), dielectric loss (tan δ) were studied. The temperature dependence of magnetic initial permeability (μi) was studied. The saturation magnetization was also studied as a function of magnetic field. These microwave sintered ferrites results were compared with the properties of ferrites prepared by conventional sintering method in normal heating. Microwave sintering improves structural as well as electromagnetic parameters measured and thus makes the ferrite more suitable in microwave applications and electromagnetic devices. [ABSTRACT FROM AUTHOR]

Abstract: Nanostructured Zn1− x Mn x S films (0⩽ x ⩽0.25) were deposited on glass substrates by simple resistive thermal evaporation technique. All the films were deposited at 300K in a vacuum of 2×10−6 m bar. All the films temperature dependence of resistivity revealed semiconducting behaviour of the samples. Hot probe test revealed that all the samples exhibited n-type conductivity. The nanohardness of the films ranges from 4.7 to 9.9GPa, Young’s modulus value ranging 69.7–94.2GPa. [Copyright &y& Elsevier]