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Vertical channel thin film transistors (VTFTs) have been expected to be exploited as one of the promising three-dimensional devices demanding a higher integration density owing to their structural advantages such as small device footprints. However, the VTFTs have suffered from the back-channel effects induced by the pattering process of vertical sidewalls, which critically deteriorate the device reliability. Therefore, to reduce the detrimental back-channel effects has been one of the most urgent issues for enhancing the device performance of VTFTs. Here we show a novel strategy to introduce an In–Ga–Zn–O (IGZO) bilayer channel configuration, which was prepared by atomic-layer deposition (ALD), in terms of structural and electrical passivation against the back-channel effects. Two-dimensional electron gas was effectively employed for improving the operational reliability of the VTFTs by inducing strong confinement of conduction electrons at heterojunction interfaces. The IGZO bilayer channel structure was composed of 3 nm-thick In-rich prompt (In/Ga = 4.1) and 12 nm-thick prime (In/Ga = 0.7) layers. The VTFTs using bilayer IGZO channel showed high on/off ratio (4.8 × 109), low SS value (180 mV dec−1), and high current drivability (13.6 μA μm−1). Interestingly, the strategic employment of bilayer channel configurations has secured excellent device operational stability representing the immunity against the bias-dependent hysteretic drain current and the threshold voltage instability of the fabricated VTFTs. Moreover, the threshold voltage shifts of the VTFTs could be suppressed from +5.3 to +2.6 V under a gate bias stress of +3 MV cm−1 for 104 s at 60 °C, when the single layer channel was replaced with the bilayer channel. As a result, ALD IGZO bilayer configuration could be suggested as a useful strategy to improve the device characteristics and operational reliability of VTFTs.

Thin film transistors (TFTs) using In-Ga-Sn-O (IGTO) active channel layers, which were prepared by atomic-layer deposition (ALD) techniques, were fabricated and characterized with exploring the optimum IGTO channel compositions and the process conditions for the formation of gate-stack structures. The introduction of an O3 oxidant was confirmed to secure a wider process window, which was explained by hydrogen incorporation from the protection layer/gate insulator stacked layers into the IGTO active channel. The cationic compositions of the IGTO thin films were controlled by subcyclic ratio design of each precursor. When the number of In-Ga precursor subcycles increased from 4 to 6, the Ga/Sn ratio increased from 3.5 to 4.0, leading to marked improvements in the VON characteristics of the fabricated IGTO TFTs. It was found from a comparative analysis on the device characteristics that the Ga/Sn ratio in the IGTO channel had a more dominant effect on the VON characteristics rather than the In/Ga ratio. The device using the channel with a cationic composition of 5.8:4.0:1.0 (In:Ga:Sn) exhibited the field-effect mobility of 19.1 cm2/V s, the subthreshold swing of 0.22 V/dec, and the threshold voltage (VTH) of 0.22 V, which corresponded to the best device characteristics among the fabricated devices. Furthermore, the VTH shifts were examined to be +0.4 and −0.4 V in positive and negative bias stress conditions, respectively, demonstrating excellent gate-bias stress stabilities. The obtained results suggest the device feasibility and fabrication process validity for the TFT applications using IGTO active channel layers prepared by ALD techniques.

This paper suggests the concept model of hybrid touch sensor that can detect touch locations and each force component in case of single or two-point touch event. The model is to calculate each force component using known touch locations obtained from commercial projective capacitive touch module. The suggested model consists of four thin-film force sensors and a tempered glass plate instead of commercial capacitive touch sensor. The force sensors are fabricated easily by simple screen printing technique and evaluated by calibration setup. Eleven single-touch events are performed to obtain the maximum deviation error of force responses with respect to touch locations. Additionally, we perform two-point touch events using a transitional load and a dead weight load (50 g or 100 g) to verify the proposed hybrid touch model. The obtained force components are compared with two input loads. It is confirmed that the hybrid touch sensor can provide satisfactorily the location of contact and the force response. Finally, we expect that the proposed touch model can detect the touch locations and force components simultaneously in case of single or two touch events.

This paper presents the design and fabrication model of a touchpad based on a contact-resistance-type force sensor. The touchpad works as a touch input device, which can sense contact location and contact force simultaneously. The touchpad is 40 mm wide and 40 mm long. The touchpad is fabricated by using a simple screen printing technique. The contact location is evaluated by the calibration setup, which has a load cell and three-axis stages. The location error is approximately 4 mm with respect to x-axis and y-axis directions. The force response of the fabricated touchpad is obtained at three points by loading and unloading of the probe. The touchpad can detect loads from 0 N to 2 N. The touchpad shows a hysteresis error rate of about 11% and uniformity error rate of about 3%.