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Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Sn–O Channels With Various Channel Compositions
- Source :
- IEEE Transactions on Electron Devices. 69:5542-5548
- Publication Year :
- 2022
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2022.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 69
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........e5c6880c1b31de3efa7e3d68331fff7d
- Full Text :
- https://doi.org/10.1109/ted.2022.3198032