1. Evolution of thermal conductivity of In3Sb β Te γ thin films up to 550 °C.
- Author
-
Battaglia, J. ‐ L., Kusiak, A., Gaborieau, C., Anguy, Y., NguyEN, H. T., Wiemer, C., Fallica, R., Campi, D., Bernasconi, M., and Longo, M.
- Subjects
ELECTRIC properties of thin films ,THERMAL conductivity measurement ,THERMAL properties of condensed matter ,RAMAN spectroscopy ,CRYSTALLIZATION - Abstract
The temperature dependent thermal conductivity of In-Sb-Te thin films has been measured by modulated photothermal radiometry in the 20-550 °C range for samples with different Te content. Significant changes with temperature are observed and ascribed to a sequence of structural transformations on the basis of in-situ Raman spectra. The data suggest that the as-deposited material consisting of a mixture of polycrystalline InSb
0.8 Te0.2 and amorphous Te first undergoes a progressive crystallization of the amorphous part, mostly above 300 °C. Further increase in temperature above 460 °C leads, for higher Te content in the alloy, to the formation of crystalline In3 SbTe2 , intertwined with a less conductive compound, possibly InTe and/or InSb. Upon cooling to room temperature, the initial polycrystalline InSb0.8 Te0.2 phase is mostly recovered along with other compounds, with a slightly higher thermal conductivity than that of the as deposited material. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]- Published
- 2016
- Full Text
- View/download PDF