Evolution of thermal conductivity of In3Sb β Te γ thin films up to 550 °C.

Authors :: Battaglia, J. ‐ L.
Kusiak, A.
Gaborieau, C.
Anguy, Y.
NguyEN, H. T.
Wiemer, C.
Fallica, R.
Campi, D.
Bernasconi, M.
Longo, M.
Source :: Physica Status Solidi - Rapid Research Letters; Jul2016, Vol. 10 Issue 7, p544-548, 5p
Publication Year :: 2016
Abstract: The temperature dependent thermal conductivity of In-Sb-Te thin films has been measured by modulated photothermal radiometry in the 20-550 °C range for samples with different Te content. Significant changes with temperature are observed and ascribed to a sequence of structural transformations on the basis of in-situ Raman spectra. The data suggest that the as-deposited material consisting of a mixture of polycrystalline InSb<subscript>0.8</subscript>Te<subscript>0.2</subscript>and amorphous Te first undergoes a progressive crystallization of the amorphous part, mostly above 300 °C. Further increase in temperature above 460 °C leads, for higher Te content in the alloy, to the formation of crystalline In<subscript>3</subscript>SbTe<subscript>2</subscript>, intertwined with a less conductive compound, possibly InTe and/or InSb. Upon cooling to room temperature, the initial polycrystalline InSb<subscript>0.8</subscript>Te<subscript>0.2</subscript>phase is mostly recovered along with other compounds, with a slightly higher thermal conductivity than that of the as deposited material. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]