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The breakdown voltage (BVDS) of uniform doping (UD) and linear variable doping (LVD) silicon-on-insulator (SOI) p-channel laterally diffused metal oxide semiconductor field effect transistors (p-LDMOSFETs) is examined after exposure to the total ionizing dose (TID). The results show BVDS degradation with accumulated dose. TID degradation with the MOS device biased off is more severe than that with the MOS device biased on. Also, LVD BVDS is more significant than UD BVDS at a given TID. Technology computer-aided design (TCAD) simulation is used to gain an insight into the mechanism causing BVDS degradation. [ABSTRACT FROM AUTHOR]

This paper presents the 2-D numerical simulation results of single-event burnout (SEB) in 4H-SiC junction barrier Schottky (JBS) diode by low carrier lifetime control (LCLC) for the first time. We investigate the SEB performance based on an 1800-V JBS structure and find that the most sensitive ion’s strike position is the middle of junction spacing because of the punchthrough of the electric field at anode contact. Then, the SEB hardening mechanism of LCLC is studied in this paper that the double-sided peak electric field can be effectively improved which results in a significantly decrease of maximal temperature. For the incident particle with different linear energy transfer values, we find that the SEB threshold voltage can be substantially enhanced when the carrier lifetime ($\tau $) is under a certain value. In addition, the basic characteristics with LCLC are discussed that the forward and reversed characteristics are hardly affected. [ABSTRACT FROM AUTHOR]

Abstract In this paper, single event effects (SEE) in a proposed high voltage 4H-SiC lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor is studied by using the 2D TCAD device simulator. Firstly, the sensitive volume of the proposed device is determined by the single ion striking different parts of the device. Then, effect of different LET and different drain bias on the transient drain current and lattice temperature has also been investigated. Thirdly, the mechanism of single event burnout has been discussed in detail. Finally, electric fields in gate oxide have been studied. According to simulation results, the sensitive volume is related to the device structure. Moreover, there is an amplification bipolar effect in the time evolution of the drain current, which is due to the activation of the parasitic bipolar transistor near the source region in the proposed device. Highlights • Single event effects of a SiC LDMOS with a step compound drift region (SiC SC LDMOS) is investigated and simulated. • Effect of LET s and drain bias on the transient current and lattice temperature of SC LDMOS after ion striking is studied. • The single event effects mechanism and sensitive volume of the SiC SC LDMOS are analyzed. • Compared with the traditional triple RESURF LDMOS, the SiC SC LDMOS can improve breakdown voltage and reduce specific on-resistance combining the technology of multiple RESURF and varied lateral thickness. [ABSTRACT FROM AUTHOR]

Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. [ABSTRACT FROM AUTHOR]