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Simulation study of single event effects in the SiC LDMOS with a step compound drift region.

Simulation study of single event effects in the SiC LDMOS with a step compound drift region.

Authors :
Bao, Meng-tian
Wang, Ying
Li, Xing-ji
Liu, Chao-ming
Yu, Cheng-hao
Cao, Fei
Source :
Microelectronics Reliability. Dec2018:Part 1, Vol. 91, p170-178. 9p.
Publication Year :
2018

Abstract

Abstract In this paper, single event effects (SEE) in a proposed high voltage 4H-SiC lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor is studied by using the 2D TCAD device simulator. Firstly, the sensitive volume of the proposed device is determined by the single ion striking different parts of the device. Then, effect of different LET and different drain bias on the transient drain current and lattice temperature has also been investigated. Thirdly, the mechanism of single event burnout has been discussed in detail. Finally, electric fields in gate oxide have been studied. According to simulation results, the sensitive volume is related to the device structure. Moreover, there is an amplification bipolar effect in the time evolution of the drain current, which is due to the activation of the parasitic bipolar transistor near the source region in the proposed device. Highlights • Single event effects of a SiC LDMOS with a step compound drift region (SiC SC LDMOS) is investigated and simulated. • Effect of LET s and drain bias on the transient current and lattice temperature of SC LDMOS after ion striking is studied. • The single event effects mechanism and sensitive volume of the SiC SC LDMOS are analyzed. • Compared with the traditional triple RESURF LDMOS, the SiC SC LDMOS can improve breakdown voltage and reduce specific on-resistance combining the technology of multiple RESURF and varied lateral thickness. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00262714
Volume :
91
Database :
Academic Search Index
Journal :
Microelectronics Reliability
Publication Type :
Academic Journal
Accession number :
132289820
Full Text :
https://doi.org/10.1016/j.microrel.2018.09.002