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Provides information on a study which used the Kissinger plots to analyze in situ resistance monitoring of silicide thin film reactions during heating at a constant rate. Kinetics of silicide formation; Activation energy for diffusion; Validity of the Kissinger method.

Presents a study which determined the dominant diffusion species in the formation of Al[sub2]Cu, Mg[sub2]Cu] and Mg[sub2]Ni. Experimental details; Results and discussion; Conclusion.

Presents a study which analyzed the diffusion of the implanted atoms of gallium, germanium and antimony into thick layers of TiSi[sub2] prepared by metal-silicon reaction. Experimental techniques used; Information about the microstructure of the atoms; Modifications of the implant distributions by annealing; Effect of a Ti implant on the modification of the dopant distribution.

Analyzes the diffusivities of boron (B), phosphorus (P) and arsenic (As) implanted in TiSi[sub2], using secondary ion mass spectroscopy. Details of the lattice diffusion coefficients for As and P; Comparison between the dopant diffusion in silicides and silicon; Description of the TiSi[sub2] layers; Cause of the profile change observed for B after annealing.

Comments on a study concerning the diffusing species in a cobalt silicide formation. History of the order of silicides for silicon device technology; Conclusions.

Comments on the paper 'Diffusion of Si in thin CoSi[sub 2] layers,' by F.D. Schowengerdt and colleagues, which appeared in a 1989 issue of the journal 'Applied Physics Letters.' Maintenance of the integrity of the silicide layers through the motion of Co atoms from the silicide-oxide to the silicide-silicon interface; Possible diffusion mechanism of Si.

Comments on the article 'Evidence for Si diffusion through epitaxial NiSi[sub2] grown on Si(111),' written by V. Hinkel, et al, and published in the journal 'Applied Physics Letters' in 1987. Demonstration of the presence of an adsorbed layer of silicon at the surface of NiSi[sub2]; Absence of evidence about the path followed to arrive at the adsorbed silicon layer.